Abstract:Abstract Ultrafast carrier relaxation in the 2D topological insulator (TI) Bi 2 Se 3 [gapped Dirac surface states (SS)] and how it inherits ultrafast relaxation in the 3D TI Bi 2 Se 3 (gapless Dirac SS) remains a challenge for developing new optoelectronic devices based on these materials. Here ultrashort (~ 100 fs) pumping pulses of ~ 340 nm wavelength (~ 3.65 eV photon energy) were applied to study ultrafast electron relaxation in the 2D TI Bi 2 Se 3 films with a thickness of 2 and 5 quintuple layers (~ 2 and ~ 5 nm, respectively) using transient absorption (TA) spectroscopy in the ultraviolet–visible spectral region (1.65–3.9 eV). The negative and positive contributions of TA spectra were attributed to absorption bleaching that mostly occurs in the bulk states and to the inverse bremsstrahlung type free carrier absorption in the gapped Dirac SS, respectively. Owing to this direct and selective access to the bulk and surface carrier dynamics, we were able to monitor coherent longitudinal optical (LO) phonon oscillations, which were successively launched in the bulk and surface states by the front of the relaxing electron population within the LO-phonon cascade emission. We have also recognized the coherent surface-to-bulk vibrational coupling that appears through the phase-dependent amplitude variations of coherent LO-phonon oscillations. This unique behavior manifests itself predominantly for the topologically trivial insulator phase of the 2D TI Bi 2 Se 3 (2 nm thick film) in the photon energy range (~ 2.0–2.25 eV) where efficient energy exchange between the bulk and surface states occurs. We also found that the coherent surface-to-bulk vibrational coupling significantly weakens with increasing both the Bi 2 Se 3 film thickness and pumping power.

Electronic and Vibrational Excitations on the Surface of the Three-Dimensional Topological Insulator Bi_2Te_3-xSe_x (x = 0, 2, 3)

Electronic and Vibrational Excitations on the Surface of the Three-Dimensional Topological Insulator Bi$_2$Te$_{3-x}$Se$_{x}$ (x = 0, 2, 3)

Stability Of The Bi2se3(111) Topological State: Electron-Phonon And Electron-Defect Scattering

Photoemission Circular Dichroism and Spin Polarization of the Topological Surface States in UltrathinBi2Te3Films

Coherent surface-to-bulk vibrational coupling in the 2D topologically trivial insulator Bi2Se3 monitored by ultrafast transient absorption spectroscopy

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Electron-phonon Coupling on the Surface of the Topological Insulator Bi2Se3: Determined from Surface Phonon Dispersion Measurements

Polarization-resolved Raman resonant excitation of surface and bulk electronic bands and phonons in MBE grown topological insulator thin films

Stability of the Bi2Se3(111) topological state: electron-phonon and -defect scattering

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Intrinsic electron-phonon resistivity of Bi2Se3 in the topological regime

Observation of Chiral Surface Excitons in a Topological Insulator Bi$_2$Se$_3$

Unoccupied Topological States on Bismuth Chalcogenides

The Interplay of Topological Surface and Bulk Electronic States in Bi2Se3

Bulk and surface electron scattering in disordered Bi$_{2}$Te$_{3}$ probed by quasiparticle interference

Direct observation of band bending in topological insulator Bi2Se3

Ultrafast Optical Excitation of a Persistent Surface-State Population in the Topological Insulator Bi2Se3

Measurement of Intrinsic Dirac Fermion Cooling on the Surface of the Topological InsulatorBi2Se3Using Time-Resolved and Angle-Resolved Photoemission Spectroscopy

Surface conduction and pi-bonds in graphene and topological insulator Bi2Se3

Revealing Optical Transitions and Carrier Recombination Dynamics within the Bulk Band Structure of Bi2Se3

Resonance Raman Scattering of Topological Insulators Bi2Te3 and Bi2 − xSbxTe3 − ySey Thin Films