Abstract:Abstract Ultrafast carrier relaxation in the 2D topological insulator (TI) Bi 2 Se 3 [gapped Dirac surface states (SS)] and how it inherits ultrafast relaxation in the 3D TI Bi 2 Se 3 (gapless Dirac SS) remains a challenge for developing new optoelectronic devices based on these materials. Here ultrashort (~ 100 fs) pumping pulses of ~ 340 nm wavelength (~ 3.65 eV photon energy) were applied to study ultrafast electron relaxation in the 2D TI Bi 2 Se 3 films with a thickness of 2 and 5 quintuple layers (~ 2 and ~ 5 nm, respectively) using transient absorption (TA) spectroscopy in the ultraviolet–visible spectral region (1.65–3.9 eV). The negative and positive contributions of TA spectra were attributed to absorption bleaching that mostly occurs in the bulk states and to the inverse bremsstrahlung type free carrier absorption in the gapped Dirac SS, respectively. Owing to this direct and selective access to the bulk and surface carrier dynamics, we were able to monitor coherent longitudinal optical (LO) phonon oscillations, which were successively launched in the bulk and surface states by the front of the relaxing electron population within the LO-phonon cascade emission. We have also recognized the coherent surface-to-bulk vibrational coupling that appears through the phase-dependent amplitude variations of coherent LO-phonon oscillations. This unique behavior manifests itself predominantly for the topologically trivial insulator phase of the 2D TI Bi 2 Se 3 (2 nm thick film) in the photon energy range (~ 2.0–2.25 eV) where efficient energy exchange between the bulk and surface states occurs. We also found that the coherent surface-to-bulk vibrational coupling significantly weakens with increasing both the Bi 2 Se 3 film thickness and pumping power.

Ultrafast Optical Excitation of a Persistent Surface-State Population in the Topological Insulator Bi2Se3

Gigantic Surface Lifetime Of An Intrinsic Topological Insulator

Gigantic surface life-time of an intrinsic topological insulator revealed via time-resolved (pump-probe) ARPES

Ultrafast surface carrier dynamics in the topological insulator Bi2Te3

Stability Of The Bi2se3(111) Topological State: Electron-Phonon And Electron-Defect Scattering

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Ultrafast Spectroscopy of Bi2Se3 Topological Insulator

Photoemission Circular Dichroism and Spin Polarization of the Topological Surface States in UltrathinBi2Te3Films

Ultrafast electron dynamics in a topological surface state observed in two-dimensional momentum space

Direct observation of a photoinduced topological phase transition in Bi-doped (Pb,Sn)Se

Revealing Optical Transitions and Carrier Recombination Dynamics within the Bulk Band Structure of Bi2Se3

Clarifying Ultrafast Carrier Dynamics in Ultrathin Films of the Topological Insulator Bi 2 Se 3 Using Transient Absorption Spectroscopy

Spatially resolved femtosecond pump-probe study of topological insulator Bi2Se3

Topological Surface States with Persistent High Spin Polarization across Dirac Point in Bi$_{2}$Te$_{2}$Se and Bi$_{2}$Se$_{2}$Te

Coherent surface-to-bulk vibrational coupling in the 2D topologically trivial insulator Bi2Se3 monitored by ultrafast transient absorption spectroscopy

Weak Anti-localization and Quantum Oscillations of Surface States in Topological Insulator Bi2Se2Te

Measurement of Intrinsic Dirac Fermion Cooling on the Surface of the Topological InsulatorBi2Se3Using Time-Resolved and Angle-Resolved Photoemission Spectroscopy

Topological surface state enhanced ultrafast spin dynamics of Fe / Bi 2 Se 3 heterostructures

Topological Surface State Evolution in Bi2Se3 via Surface Etching

Ultrafast dynamics of Dirac surface and bulk photocarriers in topological-insulator bismuth telluride nanocrystals using terahertz spectroscopy

Topological Surface State Evolution in Bi_2Se_3 Via Surface Etching