Nardeep Kumar,Brian A. Ruzicka,N. P. Butch,P. Syers,K. Kirshenbaum,J. Paglione,Hui Zhao
Abstract:Carrier and phonon dynamics in Bi2Se3 crystals are studied by a spatially resolved ultrafast pump-probe technique. Pronounced oscillations in differential reflection are observed with two distinct frequencies, and are attributed to coherent optical and acoustic phonons, respectively. The rising time of the signal indicates that the thermalization and energy relaxation of hot carriers are both sub-ps in this material. We found that the thermalization and relaxation time decreases with the carrier density. The expansion of the differential reflection profile allows us to estimate an ambipolar carrier diffusion coefficient on the order of 500 square centimeters per second. A long-term slow expansion of the profile shows a thermal diffusion coefficient of 1.2 square centimeters per second.
What problem does this paper attempt to address?
This paper aims to study the carrier and phonon dynamics in the topological insulator Bi₂Se₃, and use the spatially - resolved femtosecond pump - probe technique to solve the following problems:
1. **Understand the dynamic behaviors of carriers and phonons in Bi₂Se₃ crystals**: Specifically, the author hopes to experimentally reveal the time scales of thermalization and energy relaxation, and explore how these processes change with the carrier density.
2. **Observe the oscillation of the differential reflection signal caused by coherent optical and acoustic phonons**: The author found two oscillations with different frequencies in the experiment, which are attributed to the coherent optical phonon and the acoustic phonon respectively. These oscillations provide important information about the lattice vibration inside the material.
3. **Estimate the ambipolar carrier diffusion coefficient and the thermal diffusion coefficient**: By analyzing the spatial expansion of the differential reflection signal, the author can estimate that the ambipolar carrier diffusion coefficient in Bi₂Se₃ is approximately 500 cm²/s, and the thermal diffusion coefficient is 1.2 cm²/s.
### Specific problem analysis
#### 1. Research on carrier and phonon dynamics
The author used the spatially - resolved ultrafast pump - probe technique. By exciting the material and measuring its response to light, the carrier and phonon dynamics are studied. The experimental results show that both the thermalization and energy relaxation times of carriers are on the sub - picosecond (sub - ps) order, and these times will decrease as the carrier density increases.
#### 2. Oscillation phenomenon of the differential reflection signal
The differential reflection signal observed in the experiment shows obvious oscillations with two different frequencies. These oscillations are interpreted as being caused by the coherent optical phonon and the acoustic phonon. The specific formulas are as follows:
- **Coherent optical phonon frequency**: $\Delta T_{21}+\Delta T_{32} = 22 \, \text{ps}$, corresponding frequency $f=\frac{1}{22 \, \text{ps}}\approx0.045 \, \text{THz}$
- **High - frequency oscillation**: $f = 2.167\pm0.002 \, \text{THz}$, corresponding energy $E = h\cdot f\approx8.974 \, \text{meV}$
#### 3. Estimation of diffusion coefficients
By analyzing the spatial expansion of the differential reflection signal, the author obtained the following results:
- **Ambipolar carrier diffusion coefficient**: approximately $500 \, \text{cm}^2/\text{s}$
- **Thermal diffusion coefficient**: approximately $1.2 \, \text{cm}^2/\text{s}$
### Summary
This paper, through the spatially - resolved femtosecond pump - probe technique, has studied in detail the dynamic behaviors of carriers and phonons in Bi₂Se₃ crystals, revealed the rapid thermalization and energy relaxation processes of carriers, and confirmed the existence of coherent optical and acoustic phonons by observing the oscillation phenomenon of the differential reflection signal. In addition, the ambipolar carrier diffusion coefficient and the thermal diffusion coefficient are estimated, which provides important data support for understanding the physical mechanisms in topological insulators.