Abstract:Abstract Ultrafast carrier relaxation in the 2D topological insulator (TI) Bi 2 Se 3 [gapped Dirac surface states (SS)] and how it inherits ultrafast relaxation in the 3D TI Bi 2 Se 3 (gapless Dirac SS) remains a challenge for developing new optoelectronic devices based on these materials. Here ultrashort (~ 100 fs) pumping pulses of ~ 340 nm wavelength (~ 3.65 eV photon energy) were applied to study ultrafast electron relaxation in the 2D TI Bi 2 Se 3 films with a thickness of 2 and 5 quintuple layers (~ 2 and ~ 5 nm, respectively) using transient absorption (TA) spectroscopy in the ultraviolet–visible spectral region (1.65–3.9 eV). The negative and positive contributions of TA spectra were attributed to absorption bleaching that mostly occurs in the bulk states and to the inverse bremsstrahlung type free carrier absorption in the gapped Dirac SS, respectively. Owing to this direct and selective access to the bulk and surface carrier dynamics, we were able to monitor coherent longitudinal optical (LO) phonon oscillations, which were successively launched in the bulk and surface states by the front of the relaxing electron population within the LO-phonon cascade emission. We have also recognized the coherent surface-to-bulk vibrational coupling that appears through the phase-dependent amplitude variations of coherent LO-phonon oscillations. This unique behavior manifests itself predominantly for the topologically trivial insulator phase of the 2D TI Bi 2 Se 3 (2 nm thick film) in the photon energy range (~ 2.0–2.25 eV) where efficient energy exchange between the bulk and surface states occurs. We also found that the coherent surface-to-bulk vibrational coupling significantly weakens with increasing both the Bi 2 Se 3 film thickness and pumping power.

Ultrafast Carrier and Phonon Dynamics in Bi2se3 Crystals

Spatially resolved femtosecond pump-probe study of topological insulator Bi2Se3

Clarifying Ultrafast Carrier Dynamics in Ultrathin Films of the Topological Insulator Bi 2 Se 3 Using Transient Absorption Spectroscopy

Coherent surface-to-bulk vibrational coupling in the 2D topologically trivial insulator Bi2Se3 monitored by ultrafast transient absorption spectroscopy

Ultrafast carrier dynamics in thin-films of the topological insulator Bi2Se3

Ultrafast Carrier Dynamics In Polycrystalline Bismuth Telluride Nanofilm

Photo-excited Carrier Relaxation Dynamics in Two-Dimensional InSe Flakes.

Nanosecond dynamics in intrinsic topological insulator $\text{Bi}_{2-x}\text{Sb}_x\text{Se}_3$ revealed by time-resolved optical reflectivity

Revealing Optical Transitions and Carrier Recombination Dynamics within the Bulk Band Structure of Bi2Se3

Excitation-density and Excess-Energy Dependence of Ultrafast Dynamics of Photoexcited Carriers in Intrinsic Bulk CdTe

Ultrafast Spectroscopy of Bi2Se3 Topological Insulator

Hidden phase uncovered by ultrafast carrier dynamics in thin Bi2O2Se

Characterization of charge-carrier dynamics at the Bi2Se3/MgF2interface by multiphoton pumped UV-Vis transient absorption spectroscopy

Acoustic phonon dynamics in thin-films of the topological insulator Bi2Se3

Observation of Bimolecular Recombination in High Mobility Semiconductor Bi2O2Se Using Ultrafast Spectroscopy

Ultrafast Photocarrier Dynamics in Dirac Semimetal PtTe2 Thin Film

Ultrafast measurements of mode-specific deformation potentials of Bi$_2$Te$_3$ and Bi$_2$Se$_3$

Ultrafast Optical Excitation of a Persistent Surface-State Population in the Topological Insulator Bi2Se3

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Ultrafast carrier relaxation in SnSe (x=1, 2) thin films observed using femtosecond time-resolved transient absorption spectroscopy

Optical Properties and Photocarrier Dynamics of Bi2O2Se Monolayer and Nanoplates