Abstract:Transition metal dichalcogenides-fullerene (TMDs/fullerene) van der Waals (vdW) heterojunctions are promising for photovoltaic applications due to the intriguing optoelectronic properties of their individual components. However, fundamental understanding of the photophysics process, especially the excited-state charge transfer and recombination, remains insufficient. Here, using ab initio nonadiabatic molecular dynamics, we investigated the photoexcitation dynamics across the interface composed of MoSe2 monolayer and C60 molecule, and compared it to WSe2/C60 heterojunction which has been experimentally demonstrated efficient for photovoltaic application. Our simulation results show that MoSe2/C60 exhibits the significantly faster electron transfer and comparable charge recombination time than WSe2/C60, demonstrating the more efficient charge separation in MoSe2/C60 heterojunction. The difference of electron transfer can be primarily explained in terms of the beneficial energy alignment and the enhanced electron-vibrational interaction. The electron-phonon coupling is stronger for MoSe2/C60 heterojunction because the thermally structural fluctuation is stronger due to the presence of lighter Mo and because the donor-acceptor overlap is larger arising from the smaller fluctuation of interlayer distance. We further show that the electron transfer in MoSe2/C60 heterojunction is several orders of magnitude faster than nonradiative charge recombination. The slow charge recombination is resultant of sufficiently large energy gap and the significantly reduced nonadiabatic couplings. Rapid charge transfer and slow charge recombination ensures the MoSe2/C60 heterostructure is excellent candidate for applications in photovoltaics. Our atomistic investigation provides valuable insights into the photoexcitation dynamics across the interface form by MoSe2 and C60, demonstrating the potential of the two components in optimizing the charge separation, which is highly relevant for photovoltaic and optoelectronic applications.

Observation of Bimolecular Recombination in High Mobility Semiconductor Bi2O2Se Using Ultrafast Spectroscopy

Ultrafast visible-infrared photodetector based on the SnSe<sub>2</sub>/Bi<sub>2</sub>Se<sub>3</sub> heterostructure

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Ultrafast Carrier Kinetics at Surface and Interface of Sb2Se3 Film by Transient Reflectance

Electron-electron Scattering Dominated Electrical and Magnetotransport Properties in the Quasi-Two-dimensional Fermi Liquid Single-Crystal Bi2O2Se

Optical Properties and Photocarrier Dynamics of Bi2O2Se Monolayer and Nanoplates

Excimer formation in non‐van der Waals 2D semiconductor Bi2O2Se

Trapped Carrier Recombination in Sb2Se3 Polycrystalline Film

Ultrafast Carrier and Phonon Dynamics in Bi2se3 Crystals

Hot Carrier and Surface Recombination Dynamics in Layered InSe Crystals

Electrical Scattering Mechanism Evolution in Un-Doped and Halogen-Doped Bi2O2Se Single Crystals.

Huge permittivity and premature metallicity in Bi$_2$O$_2$Se single crystals

Hidden phase uncovered by ultrafast carrier dynamics in thin Bi2O2Se

Coherent Dynamics of Charge Carriers in γ-InSe Revealed by Ultrafast Spectroscopy

Salt-assisted growth and ultrafast photocarrier dynamics of large-sized monolayer ReSe<sub>2</sub>

Revealing Optical Transitions and Carrier Recombination Dynamics within the Bulk Band Structure of Bi2Se3

High Electron Mobility and Quantum Oscillations in Non-Encapsulated Ultrathin Semiconducting Bi2O2Se.

Ultrahigh responsivity of non-van der Waals Bi2O2Se photodetector

MoSe2/C60 Heterojunction May Be Efficient for Photovoltaic Applications: Time-Domain Ab Initio Analysis of Interfacial Charge Separation and Recombination Dynamics

High-Performance Waveguide-Integrated Bi 2 O 2 Se Photodetector for Si Photonic Integrated Circuits

Phonon-Mediated Interlayer Charge Separation and Recombination in a MoSe2/WSe2 Heterostructure