Abstract:An anomalous decay in electrical resistance of 2D bismuth sulfide is observed at 10 K. The field effect transistor device shows an ultrahigh responsivity in the order of 106 A W−1, detectivity of 1014 Jones, external quantum efficiency of 107% in a wide optical spectrum (532 to 1064 nm). Bismuth sulfide (Bi2S3) exhibits a direct energy bandgap and an exceptional optical absorption capability over a broadband radiation, thus presents a novel class of 2D photodetector material. The field effect transistor (FET) photodetector device is fabricated from 2D Bi2S3. An anomalous variation in the transport characteristics of 2D Bi2S3 is observed with the variation in temperature. The electrical resistance reduces by 99.26% at 10 K compared to the response at 300 K. Defects due to the bismuth and sulfur vacancies play a critical role in the dramatic behavior, which is confirmed using photoluminescence, time‐resolved photoluminescence, Hall measurements, and energy dispersive X‐ray spectroscopy. The density functional theory calculations provide a significant insight into the thermodynamic properties of intrinsic defects in Bi2S3. Moreover, the effect of gate bias on responsivity additionally confirms its invariance at low temperature. The Bi2S3 based FET photodetector achieves ultrahigh responsivity in the order of ≈106 A W−1 and detectivity of ≈1014 Jones. Moreover, the external quantum efficiency of ≈107% is measured in a wide spectrum of optical illumination (532 to 1064 nm) with a noise‐equivalent power of 3.5 × 10−18 W/√Hz at a bias of 0.2 V. The extraordinary performance of Bi2S3 photodetector outstands 2D photodetectors.

Ultrahigh responsivity of non-van der Waals Bi2O2Se photodetector

High‐Performance Near‐Infrared Photodetector Based on Ultrathin Bi2O2Se Nanosheets

Controlled Synthesis of a High‐Mobility Bi3O2.5Se2 Semiconductor by Oxidation of Bi2Se3 for Fast and Highly Sensitive Photodetectors

High-Performance Broadband Photoelectrochemical Photodetectors Based on Ultrathin Bi2O2S Nanosheets.

Ultrathin Bi2O2S nanosheet near-infrared photodetectors

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Ultrahigh Photo‐Responsivity and Detectivity in 2D Bismuth Sulfide Photodetector for Vis–NIR Radiation

Ultra-stable, Sensitive and Broadband Photodetector Based on Large-Area 2D Bismuth Oxyselenide Film for Multiband Image Sensing

Sensitive and Ultrabroadband Phototransistor Based on Two-Dimensional Bi2O2Se Nanosheets

Ultrasensitive 2D Bi 2 O 2 Se Phototransistors on Silicon Substrates.

Bismuth Oxychalcogenide Nanosheet: Facile Synthesis, Characterization, and Photodetector Application

High-performance self-powered photodetector based on Bi2O2Se nanosheets

Direct growth Bi2O2Se nanosheets on SiO2/Si substrate for high-performance and broadband photodetector

Ultrasensitive 2D Bi2O2Se Phototransistors on Silicon Substrates

Sensitive and Ultrabroadband Phototransistor Based on Two‐Dimensional Bi2O2Se Nanosheets

Van Der Waals Epitaxy of Bi2 Te2 Se/Bi2 O2 Se Vertical Heterojunction for High Performance Photodetector.

Thickness modulation of incline-grown Bi2O2Se for the construction of high-performance phototransistors

Bi 2 O 2 Se nanoplates for broadband photodetector and full-color imaging applications

Pbse Quantum Dots Sensitized High-Mobility Bi2o2se Nanosheets For High-Performance And Broadband Photodetection Beyond 2 Mu M

Controlled Vapor–Solid Deposition of Millimeter‐Size Single Crystal 2D Bi2O2Se for High‐Performance Phototransistors

Ultrasensitive and broadband polarization-sensitive topological insulator photodetector induced by element substitution