Direct growth Bi2O2Se nanosheets on SiO2/Si substrate for high-performance and broadband photodetector

Shengmei Gao,Xiongqing Wu,Xiao Fei Xiao,Wenliang Liu,Kai Huang,shengmei gao,xiao fei xiao

DOI: https://doi.org/10.1088/1361-6528/ad15ba

IF: 3.5

2023-12-15

Nanotechnology

Abstract:Bi2O2Se, a newly emerging two-dimensional (2D) material, has attracted significant attention as a promising candidate for optoelectronics applications due to its exceptional air stability and high mobility. Generally, mica and SrTiO3 substrates with lattice matching are commonly used for the growth of high-quality 2D Bi2O2Se. Although 2D Bi2O2Se grown on these insulating substrates can be transferred onto SiO2/Si substrate to ensure compatibility with silicon-based semiconductor processes, this process inevitably introduces technical challenges and additional defects that could potentially compromise the performance of optoelectronic devices. Here we report the direct growth of Bi2O2Se nanosheets on the SiO2/Si substrate. The photodetector based on the grown Bi2O2Se nanosheets demonstrates outstanding optoelectronics performance with a responsivity of 379 A W−1, detectivity of 2.9×1010 Jones, and rapid response time of 290 μs under 532 nm illumination. Furthermore, it demonstrates a broadband photodetection capability spanning from the visible to near-infrared range (532 nm to 1300 nm). These results indicate the promising potential of Bi2O2Se nanosheets for high-performance and broadband photodetector applications.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology