Electron-electron Scattering Dominated Electrical and Magnetotransport Properties in the Quasi-Two-dimensional Fermi Liquid Single-Crystal Bi2O2Se

Yang-Yang Lv,Lu Xu,Song-Tao Dong,Ye-Cheng Luo,Yan-Yan Zhang,Y. B. Chen,Shu-Hua Yao,Jian Zhou,Yushuang Cui,Shan-Tao Zhang,Ming-Hui Lu,Yan-Feng Chen

DOI: https://doi.org/10.1103/physrevb.99.195143

2019-01-01

Abstract:Recently, the oxide semiconductor Bi2O2Se nanoplates with an ultrahigh mobility demonstrated superior ultrafast photoelectronic properties of which physical origins are hotly studied theoretically and experimentally. Here we grew the Bi2O2Se crystals via the chemical vapor transport method. The Bi2O2Se crystal exhibits an ultrahigh Hall mobility (similar to 2.24 x 10(5) cm(2)V(-1)s(-l) at 2 K) and a giant magnetoresistance (MR similar to 0.9 x 10(4)% at 9 T and 2 K) that are comparable with those in Bi2O2Se nanoplates. MR data clearly shows Shubnikov-de Haas (SdH) oscillations. Systematic analysis of SdH oscillation verifies that the electrical carrier in Bi2O2Se is a conventional Schrddinger fermion and that the Fermi surface of Bi2O2Se is quasi-two-dimensional-like. Remarkably, the resistivity of Bi2O2Se is quadratically dependent on temperature from 2 to 300 K, inferring the electron-electron scattering in Bi2O2Se. Kohler's rule analysis of temperature-dependent MR verifies only electron-electron scattering dominated by the electrical and magnetotransport properties of Bi2O2Se. Combining first-principle calculations and empirical Landau Fermi liquid theory, we substantiate that the Fermi surface of the electron in Bi2O2Se is an elongated ellipsoid, as well as that the electron-electron interaction and screening length of Bi2O2Se are estimated as 7.49 eV and 5.53 angstrom, respectively. These values are quite large among the conventional doped semiconductors. Our study may shed more light on the physical origin of the ultrafast photoelectric response of Bi2O2Se.