Coplanar High Mobility and Interplanar Van Der Waals Heterojunction in Layered Two-Dimensional Bi2O2Se Nanosheets

Qifeng Cai,Congwei Tan,Jingyue Wang,Teng Tu,Shuang Sun,Xiaokang Li,Baotong Zhang,Haixia Li,Xiaoyan Xu,Xia An,Xing Zhang,Ru Huang,Hailin Peng,Ming He,Ming Li

DOI: https://doi.org/10.1109/led.2021.3073418

IF: 4.8157

2021-06-01

IEEE Electron Device Letters

Abstract:In this letter, the electronic transport features of layered two-dimensional (2D) Bi₂ O₂ Se semiconductor nanosheets are characterized along the in-plane and the out-of-plane directions, respectively. The modulation of double gate is manufactured on a 26.4 nm CVD-grown Bi₂ O₂ Se-nanosheet MOSFET, thus executing the highest in-plane field-effect mobility of ~296 cm² V⁻¹s⁻¹ at room temperature. Furthermore, the rectification behavior of charge transport across the perpendicular interlayer of Bi₂ O₂ Se nanosheet is distinctly scrutinized. Correspondingly, the existing of potential barrier between the [Bi₂ O₂] ${}^{2n+}$ and [Se] ${}^{2n-}$ interlayers of Bi₂ O₂ Se nanosheets is validated by the temperature-dependent current measurement and the Poole-Frenkel model. This work offers promising routes to implement high-efficient field-effect transports parallel to the in-plane direction, as well as tunable heterojunction transports across the perpendicular interlayer of 2D Bi₂ O₂ Se nanosheets.

engineering, electrical & electronic

What problem does this paper attempt to address?

The paper attempts to address the issue of exploring the electronic transport properties of layered two-dimensional (2D) Bi₂O₂Se semiconductor nanosheets in both in-plane and out-of-plane directions. Specifically, the research objectives include:

1. **In-plane transport properties**:
- Enhancing the in-plane field-effect mobility of Bi₂O₂Se nanosheets at room temperature through dual-gate modulation.
- Achieving the highest in-plane field-effect mobility (approximately 296 cm²V⁻¹s⁻¹).

2. **Out-of-plane transport properties**:
- Investigating the charge transport behavior of Bi₂O₂Se nanosheets in the vertical direction, particularly the interlayer transport characteristics.
- Verifying the barrier between [Bi₂O₂]²ⁿ⁺ and [Se]²ⁿ⁻ layers in Bi₂O₂Se nanosheets, and extracting the out-of-plane barrier height (approximately 0.39 eV) through temperature-dependent current measurements and the Poole-Frenkel model.

Through these studies, the paper aims to provide new pathways for achieving efficient in-plane field-effect transport and tunable vertical interlayer heterojunction transport, thereby promoting the application of high-performance 2D materials in electronic devices.