Bi2OS2: a Direct-Gap Two-Dimensional Semiconductor with High Carrier Mobility and Surface Electron States

Xiwen Zhang,Bing Wang,Xianghong Niu,Yunhai Li,Yunfei Chen,Jinlan Wang

DOI: https://doi.org/10.1039/c8mh01001c

IF: 13.3

2018-01-01

Materials Horizons

Abstract:Bi2OS2 nanosheets possess tunable anomalous layer-dependent bandgaps, derived from the synergetic effect of the quantum confinement and surface electron states.

What problem does this paper attempt to address?

A B 2 N monolayer: a direct band gap semiconductor with high and highly anisotropic carrier mobility

Shuyi Lin,Yu Guo,Meiling Xu,Jijun Zhao,Yiwei Liang,Xuanhao Yuan,Yiming Zhang,Feilong Wang,Jian Hao,Yinwei Li

DOI: https://doi.org/10.1039/d1nr07054a

IF: 6.7

2022-01-01

Nanoscale

Abstract:A planar 2D B 2 N monolayer with a desirable direct band gap, high thermal stability, and high and highly anisotropic carrier mobility is shown to be a promising functional material for nanoelectronics and optoelectronics applications.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Coplanar High Mobility and Interplanar Van Der Waals Heterojunction in Layered Two-Dimensional Bi2O2Se Nanosheets

Qifeng Cai,Congwei Tan,Jingyue Wang,Teng Tu,Shuang Sun,Xiaokang Li,Baotong Zhang,Haixia Li,Xiaoyan Xu,Xia An,Xing Zhang,Ru Huang,Hailin Peng,Ming He,Ming Li

DOI: https://doi.org/10.1109/led.2021.3073418

IF: 4.8157

2021-06-01

IEEE Electron Device Letters

Abstract:In this letter, the electronic transport features of layered two-dimensional (2D) Bi2 O2 Se semiconductor nanosheets are characterized along the in-plane and the out-of-plane directions, respectively. The modulation of double gate is manufactured on a 26.4 nm CVD-grown Bi2 O2 Se-nanosheet MOSFET, thus executing the highest in-plane field-effect mobility of ~296 cm2 V−1s−1 at room temperature. Furthermore, the rectification behavior of charge transport across the perpendicular interlayer of Bi2 O2 Se nanosheet is distinctly scrutinized. Correspondingly, the existing of potential barrier between the [Bi2 O2] ${}^{2n+}$ and [Se] ${}^{2n-}$ interlayers of Bi2 O2 Se nanosheets is validated by the temperature-dependent current measurement and the Poole-Frenkel model. This work offers promising routes to implement high-efficient field-effect transports parallel to the in-plane direction, as well as tunable heterojunction transports across the perpendicular interlayer of 2D Bi2 O2 Se nanosheets.

engineering, electrical & electronic
Coplanar High Mobility and Interplanar Van Der Waals Heterojunction in Layered Two-Dimensional Bi₂O₂Se Nanosheets

Qifeng Cai,Congwei Tan,Jingyue Wang,Teng Tu,Shuang Sun,Xiaokang Li,Baotong Zhang,Haixia Li,Xiaoyan Xu,Xia An,Xing Zhang,Ru Huang,Hailin Peng,Ming He,Ming Li

DOI: https://doi.org/10.1109/LED.2021.3073418

IF: 4.8157

2021-01-01

IEEE Electron Device Letters

Abstract:In this letter, the electronic transport features of layered two-dimensional (2D) Bi2 O2 Se semiconductor nanosheets are characterized along the in-plane and the out-of-plane directions, respectively. The modulation of double gate is manufactured on a 26.4 nm CVD-grown Bi2 O2 Se-nanosheet MOSFET, thus executing the highest in-plane field-effect mobility of ~296 cm2 V−1s−1 at room temperature. Furt...
B 2 S 3 monolayer: a two-dimensional direct-gap semiconductor with tunable band-gap and high carrier mobility

Yungeng Zhang,Yaxuan Wu,Chao Jin,Fengzhu Ren,Bing Wang

DOI: https://doi.org/10.1088/1361-6528/ac1d07

IF: 3.5

2021-09-02

Nanotechnology

Abstract:Atomically two-dimensional materials with direct band-gap and high carrier mobility are highly desirable due to their promising applications in electronic devices. Here, on the basis of ab initio calculations and global particle-swarm optimization method, we predict the B2S3 monolayer as a new semiconductor with favorable functional properties. The B2S3 monolayer possesses a high electron mobility of 553 cm2 V−1 s−1 and a direct band-gap of 1.85 eV. The direct band-gap can be manipulated under biaxial strain. Furthermore, B2S3 monolayer can absorb sunlight efficiently in the entire range of the visible light spectrum. Besides, this monolayer holds good dynamical, thermal, and mechanical stabilities. All the desired properties render B2S3 monolayer a promising candidate for future applications in high-speed (opto)electronic devices.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Binary Two-Dimensional Honeycomb Lattice with Strong Spin-Orbit Coupling and Electron-Hole Asymmetry.

Jian Gou,Bingyu Xia,Hang Li,Xuguang Wang,Longjuan Kong,Peng Cheng,Hui Li,Weifeng Zhang,Tian Qian,Hong Ding,Yong Xu,Wenhui Duan,Kehui Wu,Lan Chen

DOI: https://doi.org/10.1103/physrevlett.121.126801

IF: 8.6

2018-01-01

Physical Review Letters

Abstract:Two-dimensional (2D) materials consisting of heavy atoms with particular arrangements may host exotic quantum properties. Here, we report a unique 2D semiconducting binary compound, a Sn_{2}Bi atomic layer on Si(111), in which hexagons are formed by bonding Bi with a triangular network of Sn. Because of the unique honeycomb configuration, the heavy elements, and the energy-dependent hybridization between Sn and Bi, 2D Sn_{2}Bi not only shows strong spin-orbit coupling effects but also exhibits high electron-hole asymmetry: Nearly free hole bands and dispersionless flat electron bands coexist in the same system. By tuning the Fermi level, it is possible to preserve both nearly free and strongly localized charge carriers in the same 2D material, which provides an ideal platform for the studies of strongly correlated phenomena and possible applications in nanodevices.
Low-symmetry two-dimensional BNP 2 and C 2 SiS structures with high and anisotropic carrier mobilities

Shixin Song,Jie Guan,David Tománek

DOI: https://doi.org/10.1103/physrevmaterials.4.114004

IF: 3.98

2020-11-09

Physical Review Materials

Abstract:We study the stability and electronic structure of previously unexplored two-dimensional (2D) ternary compounds BNP2 and C2SiS. Using ab initio density functional theory, we have identified four stable allotropes of each ternary compound and confirmed their stability by calculated phonon spectra and molecular dynamics simulations. Whereas all BNP2 allotropes are semiconducting, we find C2SiS, depending on the allotrope, to be semiconducting or semimetallic. The fundamental band gaps of the semiconducting allotropes we study range from 1.4eV to 2.2eV at the HSE06 level and display carrier mobilities as high as 1.5×105cm2V−1s−1. Such high mobilities are quite uncommon in semiconductors with so wide band gaps. Structural ridges in the geometry of all allotropes cause a high anisotropy in their mechanical and transport properties, promising a wide range of applications in electronics and optoelectronics.

materials science, multidisciplinary
Low Residual Carrier Concentration and High Mobility in 2D Semiconducting Bi2O2Se

Jinxiong Wu,Chenguang Qiu,Huixia Fu,Shulin Chen,Congcong Zhang,Zhipeng Dou,Congwei Tan,Teng Tu,Tianran Li,Yichi Zhang,Zhiyong Zhang,Lian-Mao Peng,Peng Gao,Binghai Yan,Hailin Peng

DOI: https://doi.org/10.1021/acs.nanolett.8b03696

IF: 10.8

2019-01-01

Nano Letters

Abstract:The air-stable and high-mobility two-dimensional (2D) Bi2O2Se semiconductor has emerged as a promising alternative that is complementary to graphene, MoS2, and black phosphorus for next-generation digital applications. However, the room-temperature residual charge carrier concentration of 2D Bi2O2Se nanoplates synthesized so far is as high as about 1019-1020 cm-3, which results in a poor electrostatic gate control and unsuitable threshold voltage, detrimental to the fabrication of high-performance low-power devices. Here, we first present a facile approach for synthesizing 2D Bi2O2Se single crystals with ultralow carrier concentration of ∼1016 cm-3 and high Hall mobility up to 410 cm2 V-1 s-1 simultaneously at room temperature. With optimized conditions, these high-mobility and low-carrier-concentration 2D Bi2O2Se nanoplates with domain sizes greater than 250 μm and thicknesses down to 4 layers (∼2.5 nm) were readily grown by using Se and Bi2O3 powders as coevaporation sources in a dual heating zone chemical vapor deposition (CVD) system. High-quality 2D Bi2O2Se crystals were fabricated into high-performance and low-power transistors, showing excellent current modulation of >106, robust current saturation, and low threshold voltage of -0.4 V. All these features suggest 2D Bi2O2Se as an alternative option for high-performance low-power digital applications.
Electron Transport Properties of a Narrow-Bandgap Semiconductor Bi2O2Te Nanosheet

Xiaobo Li,Haitian Su,H. Q. Xu

DOI: https://doi.org/10.1063/5.0092046

IF: 4

2022-01-01

Applied Physics Letters

Abstract:A thin, narrow-bandgap semiconductor Bi2O2Te nanosheet is obtained via mechanical exfoliation, and a Hall-bar device is fabricated from it on a heavily doped Si/SiO2 substrate and studied at low temperatures. Gate transfer characteristic measurements show that the transport carriers in the nanosheet are of n-type. The carrier density, mobility, and mean free path in the nanosheet are determined by measurements of the Hall resistance and the longitudinal resistance of the Hall-bar device, and it is found that the electron transport in the nanosheet is in a quasi-two-dimensional (2D), strongly disordered regime. Magnetotransport measurements for the device at magnetic fields applied perpendicular to the nanosheet plane show dominantly weak antilocalization (WAL) characteristics at low fields and a linear magnetoresistance (LMR) behavior at high fields. We attribute the WAL characteristics to strong spin–orbit interaction (SOI) and the LMR to the classical origin of strong disorder in the nanosheet. Low-field magnetoconductivity measurements are also performed and are analyzed based on the multi-channel Hikami–Larkin–Nagaoka theory with the LMR correction being taken into account. The phase coherence length, spin relaxation length, effective 2D conduction channel number, and coefficient in the linear term due to the LMR in the nanosheet are extracted. It is found that the spin relaxation length in the Bi2O2Te nanosheet is several times smaller than that in its counterpart Bi2O2Se nanosheet, and thus, an ultra-strong SOI is present in the Bi2O2Te nanosheet. Our results reported in this study would greatly encourage further studies and applications of this emerging narrow-bandgap semiconductor 2D material.
The Discovery of a High-Mobility Two-Dimensional Bismuth Oxyselenide Semiconductor and Its Application in Nonvolatile Neuromorphic Devices

Yuyu He,Qi Xu,Xinyue Dong,Junhao Liu,Li Li,Bing Wang,Jiabiao Chen,Lei Zhang,Zhansheng Gao,Wei Ai,Zhaochao Liu,Zhengyang Zhou,Weigao Xu,Huixia Fu,Feng Luo,Jinxiong Wu

DOI: https://doi.org/10.1021/acsnano.3c02263

IF: 17.1

2023-06-02

ACS Nano

Abstract:The development of two-dimensional (2D) electronics is always accompanied by the discovery of 2D semiconductors with high mobility and specific crystal structures, which may bring revolutionary breakthrough on proof-of-concept devices and physics. Here, Bi(3)O(2.5)Se(2), a 2D bismuth oxyselenide semiconductor with non-neutral layered crystal structure is discovered. Ultrathin Bi(3)O(2.5)Se(2) films are readily synthesized by chemical vapor deposition, displaying tunable band gaps and high...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Two-dimensional Dirac semiconductor and its material realization

Botao Fu,Da-Shuai Ma,Chao He,Yong-Hong Zhao,Zhi-Ming Yu,Yugui Yao

DOI: https://doi.org/10.1103/physrevb.105.035126

IF: 3.7

2022-01-19

Physical Review B

Abstract:We propose a new concept of a two-dimensional (2D) Dirac semiconductor which is characterized by the emergence of four-fold degenerate band crossings near the band edge, and provide a generic approach to realize this novel semiconductor in the community of material science. Based on the first-principle calculations and symmetry analysis, we discover recently synthesized triple-layer (TL) Bi2OS2 is such a 2D Dirac semiconductor that features a Dirac cone at the X/Y point, protected by a centrosymmetric nonsymmorphic space group. Due to the sandwich-like structure, each Dirac fermion in TL-Bi2OS2 can be regarded as a combination of two Weyl fermions with opposite chiralities, degenerate in momentum-energy space but separated in real space. Such a 2D Dirac semiconductor carries hidden layer-dependent helical spin textures. Moreover, novel topological phase transitions are flexibly achieved in TL-Bi2OS2: (i) a vertical electric field can drive it into the Weyl semiconductor with switchable spin polarization direction; (ii) an extensive strain is able to generate ferroelectric polarization and actuate it into the Weyl nodal ring around the X point and into another type of four-fold degenerate point at the Y point. Our work extends the Dirac fermion into semiconductor systems and provides a promising avenue to integrate spintronics and optoelectronics in topological materials.

physics, condensed matter, applied,materials science, multidisciplinary
Two-dimensional Silicon Crystals with Sizable Band Gaps and Ultrahigh Carrier Mobility.

Zhiwen Zhuo,Xiaojun Wu,Jinlong Yang

DOI: https://doi.org/10.1039/c7nr08172c

IF: 6.7

2018-01-01

Nanoscale

Abstract:Due to their compatibility in the well-developed Si-based semiconductor industry, exploring two-dimensional (2D) silicon crystals with both sizable band gaps and high carrier mobility is important to develop high-performance electronic and optoelectronic devices on the nanoscale. Here, eleven new 2D silicon crystals are reported based on the strategy of mixing 3-fold and 4-fold coordinated silicon atoms in 2D confined phases and first-principles calculations. We establish that these 2D silicon crystals can be obtained by functionalizing silicene with silicon atoms, dimers, or chains, which exhibit lower formation energy than that of silicene. Their dynamic stability and thermal stability are confirmed by phonon calculations and Born-Oppenheimer molecular dynamic simulation at temperatures up to 700 K. Electronic structure calculations reveal that these 2D silicon crystals are semiconductors with sizable and tunable band gaps, ranging from 1.12 to 1.67 eV, and four of them are direct or quasi-direct band gap semiconductors with strong absorption in the visible-light frequency. The calculated Young's stiffness of 2D silicon crystals ranges from 31 to 88 N m-1, which are comparable to phosphorene, but remarkably smaller than those of MoS2 monolayer and graphene. Remarkably, Cz-P2/c-Si12 possesses a negative Poisson's ratio with a maximum value of -0.055. In particular, 2D silicon crystals possess ultrahigh carrier mobility of up to 1.7 × 105 and 1.3 × 104 cm2 V-1 s-1 at room temperature for electrons and holes, respectively, suitable for high-speed electronic and optoelectronic applications on the nanoscale.
Two-Dimensional Quantum Transport in Free-Standing InSb Nanosheets.

Ning Kang,Dingxun Fan,Jinhua Zhi,Dong Pan,Sen Li,Cheng Wang,Jingkun Guo,Jianhua Zhao,Hongqi Xu

DOI: https://doi.org/10.1021/acs.nanolett.8b04556

IF: 10.8

2018-01-01

Nano Letters

Abstract:Low-dimensional narrow band gap III-V compound semiconductors, such as InAs and InSb, have attracted much attention as one of promising platforms for studying Majorana zero modes and non-Abelian statistics relevant for topological quantum computation. So far, most of experimental studies were performed on hybrid devices based on one-dimensional semiconductor nanowires. In order to build complex topological circuits toward scalable quantum computing, exploring high-mobility two-dimensional (2D) III-V compound electron system with strong spin-orbit coupling is highly desirable. Here, we study quantum transport in high-mobility InSb nanosheet grown by molecular-beam epitaxy. The observations of Shubnikov-de Hass oscillations and quantum Hall states, together with the angular dependence of magnetotransport measurements, provide the evidence for the 2D nature of electronic states in InSb nanosheet. The presence of strong spin-orbit coupling in the InSb nanosheet is verified by the low-field magnetotransport measurements, characterized by weak antilocalization effect. Finally, we demonstrate the realization of high-quality InSb nanosheet-superconductor junctions with transparent interface. Our results not only advance the study of 2D quantum transport but also open up opportunities for developing hybrid topological devices based on 2D semiconducting nanosheets with strong spin-orbit coupling.
Two-dimensional YOBiS2 with Narrow Bandgap and High Carrier Mobility for Infrared Photodetector

Kai Li,Min Zhang,Jun-Jie Shi

DOI: https://doi.org/10.1016/j.physleta.2024.130062

IF: 2.707

2024-01-01

Physics Letters A

Abstract:Two-dimensional (2D) materials are highly valued for their atomic-scale thickness and exceptional mechanical, optical, and electronic properties. However, most 2D materials have band gaps above 1.6 eV, limiting their applications in infrared detection. In this work, we predict a novel 2D semiconductor YOBiS2, using first-principles calculations. Analyses of formation energy, molecular dynamics, phonon dispersion, and mechanical stability confirm its structural and dynamical stability. Remarkably, using the GW approximation taking into account the SOC, 2D YOBiS2 exhibits a direct electronic band gap of 1.38 eV. Calculations incorporating BSE indicate an exciton binding energy of 0.81 eV. Additionally, it has a low hole effective mass of 0.09 m0 and a high hole mobility of 1.66 × 104 cm2·V−1·s−1. 2D YOBiS2 possesses an exceptionally broad optical absorption spectrum, spanning from the near-infrared to the ultraviolet region, with an ultra-high absorption coefficient of 5.5 × 105 cm−1, highlighting its potential for high-performance infrared photodetectors.
Two-Dimensional TeB Structures with Anisotropic Carrier Mobility and Tunable Bandgap

Yukai Zhang,Xin Qu,Lihua Yang,Xin Zhong,Dandan Wang,Jian Wang,Baiyang Sun,Chang Liu,Jian Lv,Jinghai Yang

DOI: https://doi.org/10.3390/molecules26216404

IF: 4.6

2021-10-23

Molecules

Abstract:Two-dimensional (2D) semiconductors with desirable bandgaps and high carrier mobility have great potential in electronic and optoelectronic applications. In this work, we proposed α-TeB and β-TeB monolayers using density functional theory (DFT) combined with the particle swarm-intelligent global structure search method. The high dynamical and thermal stabilities of two TeB structures indicate high feasibility for experimental synthesis. The electronic structure calculations show that the two structures are indirect bandgap semiconductors with bandgaps of 2.3 and 2.1 eV, respectively. The hole mobility of the β-TeB sheet is up to 6.90 × 102 cm2 V−1 s−1. By reconstructing the two structures, we identified two new horizontal and lateral heterostructures, and the lateral heterostructure presents a direct band gap, indicating more probable applications could be further explored for TeB sheets.

chemistry, multidisciplinary,biochemistry & molecular biology
Two-Dimensional Semiconductors with High Intrinsic Carrier Mobility at Room Temperature

Chenmu Zhang,Ruoyu Wang,Himani Mishra,Yuanyue Liu

DOI: https://doi.org/10.1103/PhysRevLett.130.087001

2023-02-24

Abstract:Two-dimensional semiconductors have demonstrated great potential for next-generation electronics and optoelectronics, however, the current 2D semiconductors suffer from intrinsically low carrier mobility at room temperature, which significantly limits their applications. Here we discover a variety of new 2D semiconductors with mobility 1 order of magnitude higher than the current ones and even higher than bulk silicon. The discovery was made by developing effective descriptors for computational screening of the 2D materials database, followed by high-throughput accurate calculation of the mobility using a state-of-the-art first-principles method that includes quadrupole scattering. The exceptional mobilities are explained by several basic physical features; particularly, we find a new feature: carrier-lattice distance, which is easy to calculate and correlates well with mobility. Our Letter opens up new materials for high performance device performance and/or exotic physics, and improves the understanding of the carrier transport mechanism.
In-plane Heterostructures of Sb/Bi with High Carrier Mobility.

Pei Zhao,Wei,Qilong Sun,Lin Yu,Baibiao Huang,Ying Dai

DOI: https://doi.org/10.1088/1361-6528/aa71c4

IF: 3.5

2017-01-01

Nanotechnology

Abstract:In-plane two-dimensional (2D) heterostructures have been attracting public attention due to their distinctive properties. However, the pristine materials that can form in-plane heterostructures are reported only for graphene, hexagonal BN, transition-metal dichalcogenides. It will be of great significance to explore more suitable 2D materials for constructing such ingenious heterostructures. Here, we demonstrate two types of novel seamless in-plane heterostructures combined by pristine Sb and Bi monolayers by means of first-principle approach based on density functional theory. Our results indicate that external strain can serve as an effective strategy for bandgap engineering, and the transition from semiconductor to metal occurs when a compressive strain of -8% is applied. In addition, the designed heterostructures possess direct band gaps with high carrier mobility (∼4000 cm2 V-1 s-1). And the mobility of electrons and holes have huge disparity along the direction perpendicular to the interface of Sb/Bi in-plane heterostructures. It is favorable for carriers to separate spatially. Finally, we find that the band edge positions of Sb/Bi in-plane heterostructures can meet the reduction potential of hydrogen generation in photocatalysis. Our results not only offer alternative materials to construct versatile in-plane heterostructures, but also highlight the applications of 2D in-plane heterostructures in diverse nanodevices and photocatalysis.
Electron transport properties of a narrow-bandgap semiconductor Bi$_2$O$_2$Te nanosheet

Xiaobo Li,Haitian Su,H. Q. Xu

DOI: https://doi.org/10.1063/5.0092046

2022-08-19

Abstract:A thin, narrow-bandgap semiconductor Bi$_2$O$_2$Te nanosheet is obtained via mechanical exfoliation and a Hall-bar device is fabricated from it on a heavily doped Si/SiO$_2$ substrate and studied at low temperatures. Gate transfer characteristic measurements show that the transport carriers in the nanosheet are of $n$-type. The carrier density, mobility, and mean free path in the nanosheet are determined by measurements of the Hall resistance and the longitudinal resistance of the Hall-bar device and it is found that the electron transport in the nanosheet is in a quasi-two-dimensional (2D), strongly disordered regime. Magnetotransport measurements for the device at magnetic fields applied perpendicular to the nanosheet plane show dominantly weak antilocalization (WAL) characteristics at low fields and a linear magnetoresistance (LMR) behavior at large fields. We attribute the WAL characteristics to strong spin-orbit interaction (SOI) and the LMR to the classical origin of strong disorder in the nanosheet. Low-field magnetoconductivity measurements are also performed and are analyzed based on the multi-channel Hikami-Larkin-Nagaoka theory with the LMR correction being taken into account. The phase coherence length, spin relaxation length, effective 2D conduction channel number and coefficient in the linear term due to the LMR in the nanosheet are extracted. It is found that the spin relaxation length in the Bi$_2$O$_2$Te nanosheet is several times smaller than it in its counterpart Bi$_2$O$_2$Se nanosheet and thus an ultra-strong SOI is present in the Bi$_2$O$_2$Te nanosheet. Our results reported in this study would greatly encourage further studies and applications of this emerging narrow-bandgap semiconductor 2D material.

Mesoscale and Nanoscale Physics,Materials Science
Bi3O2.5Se2: a two-dimensional high-mobility polar semiconductor with large interlayer and interfacial charge transfer

Xinyue Dong,Yameng Hou,Chaoyue Deng,Jinxiong Wu,Huixia Fu

DOI: https://doi.org/10.1039/d4nr01758g

IF: 6.7

2024-08-13

Nanoscale

Abstract:Two-dimensional semiconductors with large intrinsic polarity are highly attractive for applications in high-speed electronics, ultrafast and highly sensitive photodetectors and photocatalysis. However, previous studies mainly focus on neutral layered polar 2D materials with limited vertical dipoles and electrostatic potential difference (typically <1.5 eV). Here, using the first-principles calculations, we systematically investigated the polarity of few-layer Bi3O2.5Se2 semiconductors with ultrahigh predicted room-temperature carrier mobility (1790 cm2 V-1 s-1 for the monolayer). Thanks to its unique non-neutral layered structure, few-layer Bi3O2.5Se2 contributes to a substantial interlayer charge transfer (>0.5 e-) and almost the highest electrostatic potential difference (ΔΦ) of ∼4 eV among the experimentally attainable 2D layered materials. More importantly, positioning graphene on different charged layers ([Bi2O2.5]+ or [BiSe2]-) switches the charge transfer direction, inducing selective n-doping or p-doping. Furthermore, we can use polar Bi3O2.5Se2 as an exemplary assisted gate to gain additional holes or electrons except for the external electric field, thus breaking the traditional limitations of gate tunability (∼1014 cm-2) observed in experimental settings. Our work not only expands the family of polar 2D semiconductors, but also makes a conceptual advance on using them as an assisted gate in transistors.
2D Bi2O2Te Semiconductor with Single‐Crystal Native Oxide Layer

Xiaobin Zou,Haikuan Liang,Yan Li,Yichao Zou,Fei Tian,Yong Sun,Chengxin Wang

DOI: https://doi.org/10.1002/adfm.202213807

IF: 19

2023-02-10

Advanced Functional Materials

Abstract:High‐quality Bi2O2Te nanosheets and continuous films are grown using low‐pressure chemical vapor deposition method. The construction of top single‐crystalline native oxide Bi2TeO6 and bottom high‐mobility Bi2O2Te heterostructure is demonstrated via O intercalative oxidation at elevated temperatures in air, with an atomically sharp and low‐stress interface, indicating the potential of Bi2O2Te with native oxide in planar integrated functional nanoelectronics. Following logic in the silicon semiconductor industry, the existence of native oxide and suitable fabrication technology is essential for 2D semiconductors in planar integronics, which are surface‐sensitive to typical coating technologies. To date, very few types of integronics are found to possess this feature. Herein, the 2D Bi2O2Te developed recently is reported to possess large‐area synthesis and controllable thermal oxidation behavior toward single‐crystal native oxides. This shows that surface‐adsorbed oxygen atoms are inclined to penetrate across [Bi2O2]n2n+ layers and bond with the underlying [Te]n2n− at elevated temperatures, transforming directly into [TeO4]n2n− with the basic architecture remaining stable. The oxide can be adjusted to form in an accurate layer‐by‐layer manner with a low‐stress sharp interface. The native oxide Bi2TeO6 layer (bandgap of ≈2.9 eV) exhibits visible‐light transparency and is compatible with wet‐chemical selective etching technology. These advances demonstrate the potential of Bi2O2Te in planar‐integrated functional nanoelectronics such as tunnel junction devices, field‐effect transistors, and memristors.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Hybridization gap approaching the two-dimensional limit of topological insulator Bi$_x$Sb$_{1-x}$

Paul Corbae,Aaron N. Engel,Jason T. Dong,Wilson J. Yánez-Parreño,Donghui Lu,Makoto Hashimoto,Alexei Fedorov,Christopher J. Palmstrøm

2024-09-18

Abstract:Bismuth antimony alloys (Bi$_x$Sb$_{1-x}$) provide a tuneable materials platform to study topological transport and spin-polarized surface states resulting from the nontrivial bulk electronic structure. In the two-dimensional limit, it is a suitable system to study the quantum spin Hall effect. In this work we grow epitaxial, single orientation thin films of Bi$_x$Sb$_{1-x}$ on an InSb(111)B substrate down to two bilayers where hybridization effects should gap out the topological surface states. Supported by a tight-binding model, spin- and angle-resolved photoemission spectroscopy data shows pockets at the Fermi level from the topological surface states disappear as the bulk gap increases from confinement. Evidence for a gap opening in the topological surface states is shown in the ultrathin limit. Finally, we observe spin-polarization approaching unity from the topological surface states in 10 bilayer films. The growth and characterization of ultrathin Bi$_x$Sb$_{1-x}$ alloys suggest ultrathin films of this material system can be used to study two-dimensional topological physics as well as applications such as topological devices, low power electronics, and spintronics.

Materials Science

Bi2OS2: a Direct-Gap Two-Dimensional Semiconductor with High Carrier Mobility and Surface Electron States

A B 2 N monolayer: a direct band gap semiconductor with high and highly anisotropic carrier mobility

Coplanar High Mobility and Interplanar Van Der Waals Heterojunction in Layered Two-Dimensional Bi2O2Se Nanosheets

Coplanar High Mobility and Interplanar Van Der Waals Heterojunction in Layered Two-Dimensional Bi₂O₂Se Nanosheets

B 2 S 3 monolayer: a two-dimensional direct-gap semiconductor with tunable band-gap and high carrier mobility

Binary Two-Dimensional Honeycomb Lattice with Strong Spin-Orbit Coupling and Electron-Hole Asymmetry.

Low-symmetry two-dimensional BNP 2 and C 2 SiS structures with high and anisotropic carrier mobilities

Low Residual Carrier Concentration and High Mobility in 2D Semiconducting Bi2O2Se

Electron Transport Properties of a Narrow-Bandgap Semiconductor Bi2O2Te Nanosheet

The Discovery of a High-Mobility Two-Dimensional Bismuth Oxyselenide Semiconductor and Its Application in Nonvolatile Neuromorphic Devices

Two-dimensional Dirac semiconductor and its material realization

Two-dimensional Silicon Crystals with Sizable Band Gaps and Ultrahigh Carrier Mobility.

Two-Dimensional Quantum Transport in Free-Standing InSb Nanosheets.

Two-dimensional YOBiS2 with Narrow Bandgap and High Carrier Mobility for Infrared Photodetector

Two-Dimensional TeB Structures with Anisotropic Carrier Mobility and Tunable Bandgap

Two-Dimensional Semiconductors with High Intrinsic Carrier Mobility at Room Temperature

In-plane Heterostructures of Sb/Bi with High Carrier Mobility.

Electron transport properties of a narrow-bandgap semiconductor Bi$_2$O$_2$Te nanosheet

Bi3O2.5Se2: a two-dimensional high-mobility polar semiconductor with large interlayer and interfacial charge transfer

2D Bi2O2Te Semiconductor with Single‐Crystal Native Oxide Layer

Hybridization gap approaching the two-dimensional limit of topological insulator Bi$_x$Sb$_{1-x}$