Coplanar High Mobility and Interplanar Van Der Waals Heterojunction in Layered Two-Dimensional Bi₂O₂Se Nanosheets

Qifeng Cai,Congwei Tan,Jingyue Wang,Teng Tu,Shuang Sun,Xiaokang Li,Baotong Zhang,Haixia Li,Xiaoyan Xu,Xia An,Xing Zhang,Ru Huang,Hailin Peng,Ming He,Ming Li
DOI: https://doi.org/10.1109/LED.2021.3073418
IF: 4.8157
2021-01-01
IEEE Electron Device Letters
Abstract:In this letter, the electronic transport features of layered two-dimensional (2D) Bi2 O2 Se semiconductor nanosheets are characterized along the in-plane and the out-of-plane directions, respectively. The modulation of double gate is manufactured on a 26.4 nm CVD-grown Bi2 O2 Se-nanosheet MOSFET, thus executing the highest in-plane field-effect mobility of ~296 cm2 V−1s−1 at room temperature. Furt...
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