Abstract:Leveraging from thickness control methodology, vertical ferroelectric polarization switching is recorded on a 6 nm thick specimen probed by a piezoresponse force microscopy. The ferroelectric origin is uncovered by first‐principles density‐functional theory calculations. Bi2O2Se‐based field‐effect transistor demonstrated an unprecedented current on–off ratio of 108 and carrier mobility of 131 cm2 V−1 s−1. This work manifests the feasibility of 2D Bi2O2Se for next‐generation electronics. The amelioration of atomically thin ferroelectric materials is imperative for next‐generation outperformed two‐dimensional (2D) electronics, which is elusive by their bulk counterparts. These remarkable materials' ferroelectric and piezoelectric features are the fundamental urges in optoelectronics, electronics, and energy harvesting. In this work, 2D ferroelectric Bi2O2Se flakes have been synthesized using a modified chemical vapor deposition technique. The 6 nm thick Bi2O2Se flake provides a robust ferroelectric switching under an applied voltage of ±10 V by piezoresponse force microscopy, further confirmed by first principles. Leveraging the successful growth, the high‐quality Bi2O2Se flakes permit the fabrication of a field‐effect transistor (FET) with state‐of‐the‐art performance. The FET device rewards a high current on–off ratio of 108 and field effect mobility of almost 131 cm2 V−1 s−1, owing to the small carrier effective mass of 0.2 m0. Combined, the electric field‐induced local polarization of ferroelectric switching and unprecedented device performance of Bi2O2Se semiconductors are certified for their utilization in advanced nanoelectronics and miniaturization of multifunctional devices with multifunctionalities.

Giant modulation of the electron mobility in semiconductor Bi$_2$O$_2$Se via incipient ferroelectric phase transition

Giant Modulation of the Electron Mobility in Semiconductor Bi2O2Se via Incipient Ferroelectric Phase Transition

Self-Modulation Doping Effect in the High-Mobility Layered Semiconductor Bi2O2Se

Electron-electron Scattering Dominated Electrical and Magnetotransport Properties in the Quasi-Two-dimensional Fermi Liquid Single-Crystal Bi2O2Se

Bismuth Oxychalcogenides: A New Class of Ferroelectric/Ferroelastic Materials with Ultra High Mobility

Huge permittivity and premature metallicity in Bi$_2$O$_2$Se single crystals

The Robust Ferroelectric and Electrical Response in 2D Bi2O2Se Semiconductor

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Coplanar High Mobility and Interplanar Van Der Waals Heterojunction in Layered Two-Dimensional Bi2O2Se Nanosheets

Phonon-limited Mobility of 2D Semiconductors: Quadrupole Scattering and Free-carrier Screening

Coplanar High Mobility and Interplanar Van Der Waals Heterojunction in Layered Two-Dimensional Bi₂O₂Se Nanosheets

Sodium bismuth dichalcogenides: candidates for ferroelectric high-mobility semiconductors for multifunctional applications

Tunable lattice dynamics and dielectric functions of two-dimensional Bi2O2Se: Striking layer and temperature dependent effects

Gate‐Tunable Polar Optical Phonon to Piezoelectric Scattering in Few‐Layer Bi 2 O 2 Se for High‐Performance Thermoelectrics

Low Residual Carrier Concentration and High Mobility in 2D Semiconducting Bi2O2Se

Achieving ferroelectricity in a centrosymmetric high-performance semiconductor by strain engineering

Hidden phase uncovered by ultrafast carrier dynamics in thin Bi2O2Se

High Mobilities in Layered InSe Transistors with Indium-Encapsulation-Induced Surface Charge Doping.

Highly insulating phase of Bi2O2Se thin films with high electronic performance

Highly Insulating Phase of Bi 2 O 2 Se Thin Films with High Electronic Performance

Ultrahigh Hall Mobility and Suppressed Backward Scattering in Layered Semiconductor Bi2O2Se