Gate‐Tunable Polar Optical Phonon to Piezoelectric Scattering in Few‐Layer Bi 2 O 2 Se for High‐Performance Thermoelectrics

Fang Yang,Jing Wu,Ady Suwardi,Yunshan Zhao,Boyuan Liang,Jie Jiang,Jianwei Xu,Dongzhi Chi,Kedar Hippalgaonkar,Junpeng Lu,Zhenhua Ni

DOI: https://doi.org/10.1002/adma.202004786

IF: 29.4

2020-12-13

Advanced Materials

Abstract:<p>Atomically thin Bi₂O₂Se has emerged as a new member in 2D materials with ultrahigh carrier mobility and excellent air‐stability, showing great potential for electronics and optoelectronics. In addition, its ferroelectric nature renders an ultralow thermal conductivity, making it a perfect candidate for thermoelectrics. In this work, the thermoelectric performance of 2D Bi₂O₂Se is investigated over a wide temperature range (20–300 K). A gate‐tunable transition from polar optical phonon (POP) scattering to piezoelectric scattering is observed, which facilitates the capacity of drastic mobility engineering in 2D Bi₂O₂Se. Consequently, a high power factor of more than 400 <b>µ</b>W m⁻¹ K⁻² over an unprecedented temperature range (80–200 K) is achieved, corresponding to the persistently high mobility arising from the highly gate‐tunable scattering mechanism. This finding provides a new avenue for maximizing thermoelectric performance by changing the scattering mechanism and carrier mobility over a wide temperature range.</p>

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to optimize the thermoelectric performance in the two - dimensional material Bi₂O₂Se by regulating the scattering mechanism. Specifically, the researchers explored how to utilize the gate - voltage - tuned transition from polar - optical - phonon (POP) scattering to piezoelectric scattering, thereby achieving precise control of carrier mobility. This control can not only significantly improve the power factor (PF), but also maintain high mobility in a wide temperature range, thus enhancing the performance of thermoelectric materials.

The paper mentions that traditional thermoelectric materials usually exhibit the best thermoelectric performance within a narrow temperature range, which limits their effectiveness in practical applications. Bi₂O₂Se, due to its unique properties, such as ultra - high carrier mobility and low thermal conductivity, has become a highly potential thermoelectric material. Through the regulation of gate voltage, the researchers can achieve a high power factor in a wide temperature range, which provides new ideas and methods for developing highly efficient thermoelectric conversion materials.

In addition, this research also reveals the transformation rules between different scattering mechanisms in Bi₂O₂Se, which is of great significance for understanding the electron transport behavior in two - dimensional materials and provides a theoretical basis for designing high - performance thermoelectric materials in the future.