A cytopathic effect of Trichomonas vaginalis probably mediated by a mannose/N-acetyl-glucosamine binding lectin.

F. Roussel,G. Carli,P. Brasseur

DOI: https://doi.org/10.1016/0020-7519(91)90170-C

1991-12-01

Abstract:

What problem does this paper attempt to address?

Few-layer Bi2O2Se: A promising candidate for high-performance near-room-temperature thermoelectric applications

Weng Hou Yip,Qundong Fu,Jing Wu,Kedar Hippalgaonkar,Zheng Liu,Xingli Wang,Mohamed Boutchich,Beng Kang Tay

DOI: https://doi.org/10.1088/1361-6528/ad7035

IF: 3.5

2024-08-19

Nanotechnology

Abstract:Advancements in high-temperature thermoelectric materials have been substantial, yet identifying promising near-room-temperature candidates for efficient power generation from low-grade waste heat or thermoelectric cooling applications has become critical but proven exceedingly challenging. Bismuth oxyselenide (Bi2O2Se) emerges as an ideal candidate for near-room-temperature energy harvesting due to its low thermal conductivity, high carrier mobility and remarkable air-stability. In this study, the thermoelectric properties of few-layer Bi2O2Se over a wide temperature range (20 – 380 K) are investigated, where a charge transport mechanism transitioning from polar optical phonon (POP) to piezoelectric scattering at 140 K is observed. Moreover, the Seebeck coefficient (S) increases with temperature up to 280 K then stabilizes at ~-200 μV/K through 380 K. Bi2O2Se demonstrates high mobility (450 cm2V-1s-1) within the optimum power factor (PF) window, despite its T^(-1.25) dependence. The high mobility compensates the minor reduction in carrier density n2D hence contributes to maintain a robust electrical conductivity ~3x104 S/m. This results in a remarkable PF of 860 μW m-1K-2 at 280 K without the necessity for gating (Vg = 0 V), reflecting the innate performance of the as-grown material. These results underscore the considerable promise of Bi2O2Se for room temperature thermoelectric applications.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Rational triple optimizations boost near-room-temperature thermoelectric performance of BiSe

Hui Liu,Xiao-Lei Shi,Lin Pan,Yuanqing Mao,Meng Li,Lijun Wang,Wei-Di Liu,Qingfeng Liu,Yifeng Wang,Zhi-Gang Chen

DOI: https://doi.org/10.1016/j.actamat.2024.120343

IF: 9.4

2024-09-03

Acta Materialia

Abstract:As a Te-free alternative to Bi 2 Te 3 , BiSe exhibits attractive near-room-temperature thermoelectric potential as an n-type material, yet its excessive electrical conductivity limits practical applications. To enhance the overall thermoelectric performance, we devise a rational triple optimization process to boost the figure of merit, ZT , of polycrystalline BiSe up to 0.84 at 475 K, a current record-high value. The shear exfoliation process introduces increased Bi vacancies and denser grain boundaries in the sintered polycrystalline material. This modification effectively reduces excessive electron carrier concentration and carrier scattering. Consequently, this reduction in excessive electrical conductivity, which previously leads to low Seebeck coefficients and high electronic thermal conductivity, is mitigated. As a result, there is a significant increase in the Seebeck coefficient and an optimization of the power factor. Subsequent equivalent substitution by Sb doping at Bi sites (Sb Bi ) widens the bandgap, while secondary Sn doping at Bi sites (Sn Bi ) achieves acceptor doping, further reducing electrical conductivity and enhancing the Seebeck coefficient to improve the power factor. Moreover, this triple optimization process systematically introduces various crystal and lattice defects, effectively scattering phonons of different wavelengths to lower the lattice thermal conductivity, ultimately resulting in a remarkable 235 % increase in ZT . This work offers new insights into effectively enhancing the performance of layered thermoelectric materials.

materials science, multidisciplinary,metallurgy & metallurgical engineering
Enhancing thermoelectric performance of BiSbSe3 through improving carrier mobility via percolating carrier transports

Sining Wang,Yu Xiao,Dudi Ren,Lizhong Su,Yuting Qiu,Li-Dong Zhao

DOI: https://doi.org/10.1016/j.jallcom.2020.155473

IF: 6.2

2020-09-01

Journal of Alloys and Compounds

Abstract:BiSbSe3 is a promising medium-temperature thermoelectric material on account of its intrinsically low thermal conductivity. To further enhance the thermoelectric performance in n-type BiSbSe3, we conduct Br doping at Se sites to optimize its carrier concentration and electrical conductivity, finally a maximum ZT of ∼0.8 in nanostructured BiSb(Se0.94Br0.06)3 is obtained at 700 K through mechanical alloying. Based on the optimal BiSb(Se0.94Br0.06)3 composition, we perform percolation effect with mixed grain sizes in nanoscale and microscale to enhance carrier mobility. It is found that carrier mobility is favorably improved by the addition of microscale grains (∼30 μm) in nanostructured BiSb(Se0.94Br0.06)3 matrix due to the reduced grain boundaries to carrier scattering, which benefits high electrical conductivity and power factor. Simultaneously, the BiSb(Se0.94Br0.06)3 matrix with mixed grain sizes still maintains very low thermal conductivity due to its intrinsically strong lattice anharmonicity. Owing to the optimized electrical properties and maintained low thermal conductivity, we obtain a maximum ZT value of ∼1.0 at 700 K in BiSb(Se0.94Br0.06)3–4C matrix with 40% microscale grains. This work provides a feasible method to optimize thermoelectric performance by designing microstructure with percolation effect.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
BiSbSe3: A promising Te-free thermoelectric material

Sining Wang,Yuting Qiu,Li-Dong Zhao

DOI: https://doi.org/10.1063/5.0159352

IF: 4

2023-06-26

Applied Physics Letters

Abstract:BiSbSe3 is a Te-free thermoelectric material with a chain-like complex crystal structure and multiple band configuration. This work overviews recent advancements in BiSbSe3, clearly demonstrating its excellent thermal and electrical characteristics. The strategies to optimize the thermoelectric performance of BiSbSe3 mainly focus on two aspects: manipulating carrier concentration and effective mass based on multiple conduction bands, and elevating carrier mobility based on maneuvering electrical parameters and microstructures. Additionally, strategies for boosting the carrier mobility are outlined as the prospects for the future development of BiSbSe3, including sharpening bands, improving orientation, and designing composites.

physics, applied
Optimization of Thermoelectric Property of n‐Type Mg3Sb2 Near Room Temperature via Mn&Se Co‐Doping

Runyu Wang,Siyun Luo,Xiaobo Mo,Hang Liu,Tong Liu,Xiaobo Lei,Qinyong Zhang,Jianjun Zhang,Lihong Huang

DOI: https://doi.org/10.1002/adsu.202300234

IF: 6.737

2023-08-04

Advanced Sustainable Systems

Abstract:Herein, a competitive ZT of ≈0.8 at 300 K and a high power factor greater than 30 μW cm−1 K−2 at 300 K in n‐type Mg3.14Mn0.06Bi1.4Sb0.59Se0.01 is reported, benefiting from the rationally tuned carrier concentration of 2.29 × 1019 cm−3 at room temperature. The high room temperature thermoelectric performance of n‐type Mn&Se co‐doped Mg3(Bi, Sb)2‐based materials makes them a highly competitive substitute for commercialized n‐type Bi2Te3. The Bi2Te3 family has been considered a state‐of‐the‐art thermoelectric material for room‐temperature applications for over half a century. However, scarcity of the material Te has been a persistent issue. Recently, the discovery of n‐type Mg3(Bi, Sb)2‐based materials provides new hope for replacing traditional Bi2Te3, but their thermoelectric properties near room temperature still need improvement for application to practical devices. Herein, a competitive figure of merit of ≈0.8 at 300 K and a high power factor greater than 30 μW cm−1 K−2 at 300 K in n‐type Mg3.14Mn0.06Bi1.4Sb0.59Se0.01 is reported, benefiting from the rationally tuned carrier concentration of 2.29×1019 cm−3 at room temperature. Substituting the Mg site with Mn in Mg3.2Bi1.4Sb0.59Se0.01 changes the dominant carrier scattering mechanism from a mixed scattering of acoustic phonons and ionized impurities to acoustic phonon scattering. Mn doping in Mg3.2Bi1.4Sb0.59Se0.01 also enhances the mobility to 180 cm2 V−1 s−1, reduces the thermal conductivity, and significantly increases the quality factor β of the material. The high room temperature thermoelectric performance of n‐type Mn&Se co‐doped Mg3(Bi, Sb)2‐based materials makes them a highly competitive substitute for commercialized n‐type Bi2Te3.

materials science, multidisciplinary,green & sustainable science & technology
Na/Bi-co-doping and Heterogeneous Interfaces Leading to Enhanced Thermoelectric Performance of P-Type Mg3Sb2-based Zintls

Zhe Xu,Xiao-Lei Shi,Yibo Zhang,Jisheng Liang,Meng Li,Chengyan Liu,Lei Miao,Siqi Liu,Shihao Wang,Qi Zhou,Jie Gao,Zhongwei Zhang,Wei-Di Liu,Ying Peng,Jun-Liang Chen,Zhi-Gang Chen

DOI: https://doi.org/10.1016/j.cej.2024.155147

IF: 15.1

2024-01-01

Chemical Engineering Journal

Abstract:Owing to the non-toxicity and low cost, Mg3Sb2-based Zintls are promising candidates for mid-temperature thermoelectric applications. However, the thermoelectric performance of p-type Mg3Sb2 is significantly lower than that of n-type ones. Here, we achieve simultaneous optimization of the band structure and enhanced phonon scattering through the combined doping of Na at the cation site and Bi at the anion site, leading to a competitive figure of merit, ZT of 0.73 at 773 K and a maximum theoretical energy conversion efficiency of 6.5 % at a temperature difference of 450 K. First-principles calculations indicate that Na and Bi co-doping effectively narrows the band gap and shifts the Fermi level into the valence band, thereby increasing the hole carrier concentration. This ensures a relatively high Seebeck coefficient and improved electrical conductivity, resulting in an excellent power factor of 7.5 mu W cm(-1) K-2. Additionally, by adjusting the amount of Bi nanoprecipitates in the matrix, the heterogeneous interfaces significantly enhance phonon scattering and markedly reduce the lattice thermal conductivity (0.52 W m(-1) K-1), collectively leading to the high thermoelectric performance. Furthermore, by pairing n-type Mg3.18Y0.02Sb1.5Bi0.49Se0.01, a double-leg thermoelectric device achieves an energy conversion efficiency of 4.1 % with a temperature difference of 390 K.
Rectalepidural fistula complicating Crohn's enterocolitis

D. West,Thomas R. Russell,M. Brotman

DOI: https://doi.org/10.1007/BF02552977

1983-09-01

Diseases of the Colon & Rectum

Abstract:
High-Performance Low-Cost n-Type Se-Doped Mg3Sb2-Based Zintl Compounds for Thermoelectric Application

Aref H Mamakhel,M. R. Jørgensen,Lirong Song,Jiawei Zhang,B. Iversen

DOI: https://doi.org/10.1021/ACS.CHEMMATER.7B01746

2017-06-19

Abstract:Thermoelectric materials, capable of converting heat directly into electricity without moving parts, provide a promising solid-state solution for waste heat harvesting. However, currently available commercial thermoelectric materials PbTe and Bi2Te3 are based on tellurium, an extremely scarce and expensive element, which prohibits large scale applications. Herein, we present a systematic study on a new low-cost Te-free material, n-type Se-doped Mg3Sb1.5Bi0.5, by combining the structure and property characterization with electronic structure and electrical transport modeling. Compared with pure Mg3Sb2, Se-doped Mg3Sb1.5Bi0.5 shows the considerably enhanced power factor as well as much lower thermal conductivity. The excellent electrical transport originates from a nontrivial near-edge conduction band with six conducting carrier pockets and a light conductivity effective mass as well as the weak contribution from a secondary conduction band with a valley degeneracy of 2. The accurate location of the conduct...

Physics,Engineering,Materials Science
Boosting room-temperature thermoelectric performance of Mg 3 Sb 1.5 Bi 0.5 material through breaking the contradiction between carrier concentration and carrier mobility

Feng Jiang,Xinzhi Wu,Yongbin Zhu,Chengliang Xia,Zhijia Han,Hulei Yu,Chen Chen,Tao Feng,Jun Mao,Yue Chen,Weishu Liu

DOI: https://doi.org/10.1016/j.actamat.2023.119636

IF: 9.4

2023-12-29

Acta Materialia

Abstract:Recently, low-cost Mg 3 Sb 2- y Bi y -based materials with high performance near room temperatures have been reported, which are considered to be promising candidates for replacing commercial Bi 2 Te 3 -based materials. Herein, we report a high power factor of ∼3000 μW m −1 K −1 and a ZT value of 0.82 at room temperature in Ti 0.05 Mg 3.15 Sb 1.5 Bi 0.49 Te 0.01 . Ti dopant entering into the Mg1 sublattice slightly increases the carrier concentration by the introduction of impurity states and enhances the carrier mobility by the promotion of grain size growth. The two-donor doping strategy breaks the contradiction between carrier concentration and carrier mobility, thus significantly improving the electrical transport properties near room temperatures. In addition, the introduction of defects by Ti dopant contributes to the decreased lattice thermal conductivity. Consequently, a ZT avg value of 1.19 is obtained at 50 - 250 °C, ranking the top among reported n-type thermoelectric materials. Moreover, the as-fabricated single-leg device shows an high engineering efficiency considering the radiation calibration, i.e., 7.2% and 11.8% at temperature differences of 250 °C and 500 °C with T c = 0 °C, respectively, demonstrating the great potential of substituting the commercial Bi 2 Te 3 -family.

materials science, multidisciplinary,metallurgy & metallurgical engineering
Expand band gap and suppress bipolar excitation to optimize thermoelectric performance of Bi0.35Sb1.65Te3 sintered materials

Lidong Chen,Qiang Zhang,Zhe Guo,Zipeng Yan,Kun Song,Gang Wu,Xuemei Wang,Xiaojian Tan,Haoyang Hu,Peng Sun,Guo-Qiang Liu,Jun Jiang

DOI: https://doi.org/10.1016/j.mtphys.2021.100544

IF: 11.021

2021-11-01

Materials Today Physics

Abstract:Bismuth-telluride-based alloys have been the state-of-art thermoelectric candidates near room temperature. However, sintered samples with higher ZT values in a wide temperature range are still urgently needed for further applications. Especially owing to the small band gap, the minority carriers are boosted at higher temperature and the thermoelectric properties are severely deteriorated. Here, we prepared p-type Bi0.35Sb1.65Te3-x Se x samples by hot pressing to enlarge the band gap and suppress the bipolar excitation. Although the carrier concentrations are slightly increased by the tiny Se alloying, the Seebeck coefficients above 400 K are significantly improved, and the bipolar and lattice contributions to thermal transport are obviously reduced. The x = 0.04 sample thus achieves an average value of 1.1 between 300 and 500 K, and the constructed thermoelectric device produces an output power density of 0.36 W cm−2 and conversion efficiency of 5.24% at a temperature difference of 200 K. These results suggest that Se-doped Bi0.35Sb1.65Te3 is a robust candidate for low-grade heat harvest near room temperature.

materials science, multidisciplinary,physics, applied
Synergistical Enhancement of Thermoelectric Properties in N‐type Bi2O2Se by Carrier Engineering and Hierarchical Microstructure

Xing Tan,Yaochun Liu,Rui Liu,Zhifang Zhou,Chan Liu,Jin-Le Lan,Qinghua Zhang,Yuan-Hua Lin,Ce-Wen Nan

DOI: https://doi.org/10.1002/aenm.201900354

IF: 27.8

2019-01-01

Advanced Energy Materials

Abstract:Oxygen-containing compounds are promising thermoelectric (TE) materials for their chemical and thermal stability. As compared with the high-performance p-type counterparts (e.g., ZT approximate to 1.5 for BiCuSeO), the enhancement of the TE performance of n-type oxygen-containing materials remains challenging due to their mediocre electrical conductivity and high thermal conductivity. Here, n-type layered Bi2O2Se is reported as a potential TE material, of which the thermal conductivity and electrical transport properties can be effectively tuned via carrier engineering and hierarchical microstructure. By selective modification of insulating [Bi2O2](2+) layers with Ta dopant, carrier concentration can be increased by four orders of magnitude (from 10(15) to 10(19) cm(-3)) while relatively high carrier mobility can be maintained, thus greatly enhancing the power factors (approximate to 451.5 mu W K-2 m(-1)). Meanwhile, the hierarchical microstructure can be induced by Ta doping, and the phonon scattering can be strengthened by atomic point defects, nanodots of 5-10 nm and grains of sub-micrometer level, which progressively suppresses the lattice thermal conductivity. Accordingly, the ZT value of Bi1.90Ta0.10O2Se reaches 0.36 at 773 K, a approximate to 350% improvement in comparison with that of the pristine Bi2O2Se. The average ZT value of 0.30 from 500 to 823 K is outstanding among n-type oxygen-containing TE materials. This work provides a desirable way for enhancing the ZT values in oxygen-containing compounds.
Localized Vibrations of Bi Bilayer Leading to Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in Weak Topological Insulator n-Type BiSe

Manisha Samanta,Koushik Pal,Provas Pal,Umesh V Waghmare,Kanishka Biswas

DOI: https://doi.org/10.1021/jacs.8b02691

2018-05-02

Abstract:Realization of high thermoelectric performance in n-type semiconductors is of imperative need on account of the dearth of efficient n-type thermoelectric materials compared to the p-type counterpart. Moreover, development of efficient thermoelectric materials based on Te-free compounds is desirable because of the scarcity of Te in the Earth's crust. Herein, we report the intrinsic ultralow thermal conductivity and high thermoelectric performance near room temperature in n-type BiSe, a Te-free solid, which recently has emerged as a weak topological insulator. BiSe possesses a layered structure consisting of a bismuth bilayer (Bi2) sandwiched between two Bi2Se3 quintuple layers [Se-Bi-Se-Bi-Se], resembling natural heterostructure. High thermoelectric performance of BiSe is realized through the ultralow lattice thermal conductivity (κlat of ∼0.6 W/mK at 300 K), which is significantly lower than that of Bi2Se3 (κlat of ∼1.8 W/mK at 300 K), although both of them belong to the same layered homologous family (Bi2) m(Bi2Se3) n. Phonon dispersion calculated from first-principles and the experimental low-temperature specific heat data indicate that soft localized vibrations of bismuth bilayer in BiSe are responsible for its ultralow κlat. These low energy optical phonon branches couple strongly with the heat carrying acoustic phonons, and consequently suppress the phonon mean free path leading to low κlat. Further optimization of thermoelectric properties of BiSe through Sb substitution and spark plasma sintering (SPS) results in high ZT ∼ 0.8 at 425 K along the pressing direction, which is indeed remarkable among Te-free n-type thermoelectric materials near room temperature.
High thermoelectric performance and anisotropy studies of n-type Mg3Bi2-based single crystal

Qi-Qi Wang,Ke-Feng Liu,Yuan-Yuan Su,Xiao-Cun Liu,Qian Liu,Shun Zhou,Jian Liu,Sheng-Qing Xia

DOI: https://doi.org/10.1016/j.actamat.2023.119028

IF: 9.4

2023-08-01

Acta Materialia

Abstract:Layered high-performing Mg3Bi2-based materials which made from nontoxic and earth-abundant elements have been considered as a promising thermoelectric candidate for low-grade energy recycling. High-quality compositionally controllable Mg3Bi2-based single crystals are grown using modified Bridgman method. The anisotropy of in- and out of plane in high-quality Mg3Bi1.49Sb0.5Te0.01 bulk single crystals are clearly characterized, record high ZT of ∼0.9 at 300 K as well as excellent ZT avg of 1.26 in the temperature range of 300-523 K are achieved along ab-plane, both of which rank as top values among the reported literature. Owing to the higher mobility (266 vs 189 cm2·V−1·s−1), the electrical conductivity along ab-plane is about 25% larger than that along c-axis at room temperature. Besides, Seebeck coefficient and lattice thermal conductivity are insensitive to the direction, resulting in anisotropy of thermoelectric performance but smaller than van der Waals layered materials. Compared with parent Mg3Bi1.5Sb0.5, both carrier concentration and mobility are significant improved with quantitative Te doping, leading to greatly enhanced power factor. With in-depth investigations of anisotropy, the results presented here will advance the fundamental understanding of Mg3Bi2-based system and suggest new ideas on design of the state-of-art thermoelectric materials with high performance.

materials science, multidisciplinary,metallurgy & metallurgical engineering
2D Bi2Te3/Si heterostructure with high thermoelectric power factor enabled by interface regulated carrier injection

Lili Chen,Beibei Zhu,Jiayi Chen,Shanshan Xing,Li Tao

DOI: https://doi.org/10.1088/1361-6528/acc5f0

IF: 3.5

2023-03-23

Nanotechnology

Abstract:It has been highly demanded to optimize the charge carrier concentration in 2D Bi2Te3 to achieve enhanced thermoelectric performance. This work reveals that, constructing 2D Bi2Te3/Si heterostructure with tuned interfacial electronic band structure can meet the above needs. When the work function in Si substrate is decreased from 4.6 to 4.06 eV, the charge carrier concentration and electron effective mass are increased simultaneously. Consequently, the electrical conductivity of 2D Bi2Te3 on n++-Si has reaches up to 1250 S·cm-1, which is 90% higher than the counterpart on SiO2/Si substrate, although the Seebeck coefficient in these two samples is close -103 μV·K-1. The resultant power factor of 2D Bi2Te3/n++-Si heterostructure is 13.4 μW·cm-1·K-2, which is one of the best values among similar studies ever reported. This work demonstrates a facile way to improve thermoelectric properties via interfacial engineering in a heterostructure.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Synergistically enhanced thermoelectric properties in n-type Bi6Cu2Se4O6 through inducing resonant levels

Junqing Zheng,Tao Hong,Dongyang Wang,Bingchao Qin,Xiang Gao,Li-Dong Zhao

DOI: https://doi.org/10.1016/j.actamat.2022.117930

IF: 9.4

2022-06-01

Acta Materialia

Abstract:Oxygen-containing semiconductors are considered to be promising thermoelectric materials because of the high physicochemical stability. New layered oxyselenide Bi6Cu2Se4O6 possesses intrinsic low lattice thermal conductivity and can be modulated to n-type semiconductor through halogen doping, which is considered as a potential n-type thermoelectric oxide. In this work, first-principles calculations are utilized to obtain the electronic and phonon band structures for deeply recognizing the transport features of intrinsic Bi6Cu2Se4O6. Furthermore, Nb is selected as donor dopant in Bi6Cu2Se3.6Cl0.4O6, realizing a significantly improved power factor of ∼ 4.3 μV cm−1 K−2, which originates from the simultaneously optimized carrier concentration by effective doping and strengthened effective mass by inducing resonant levels around Fermi level. Meanwhile, the enhancement of phonon scattering are introduced, leading to a low lattice thermal conductivity of ∼ 0.68 W m−1 K−1. Finally, thanks to the effective doping of Nb and the introduction of resonant levels, a maximum ZT ∼ 0.4 at 873 K and an average ZT ∼ 0.21 from 303 to 873 K can be obtained in n-type Bi5.91Nb0.09Cu2Se3.6Cl0.4O6. This study broadens the applicability of resonant levels to optimize performances of thermoelectric oxides, and promotes the potential application of n-type Bi6Cu2Se4O6-based thermoelectric materials in medium temperature range.

materials science, multidisciplinary,metallurgy & metallurgical engineering
High-Temperature Thermoelectric Monolayer Bi 2 TeSe 2 with High Power Factor and Ultralow Thermal Conductivity

Ning Wang,Chen Shen,Zhehao Sun,Haiyan Xiao,Hongbin Zhang,Zongyou Yin,Liang Qiao

DOI: https://doi.org/10.1021/acsaem.1c04109

IF: 6.4

2022-02-17

ACS Applied Energy Materials

Abstract:Because of the quantum confinement effect and the interface/surface effect, the band gap of 0.8–1.5 eV for two-dimensional (2D) bismuth-based material is significantly enlarged relative to that of bulk phase materials (∼0.2 eV), which removes the inhibition effect caused by bipolar transport for the Seebeck coefficients of bulk-phase bismuth-based materials at high temperature. Therefore, the 2D bismuth-based materials exhibit huge application prospects in high-temperature thermoelectric (TE) devices, whereas their figure of merits (ZT) need to be further improved. This work reports the thermal and electrical transport properties of 2D Bi2TeSe2, a new Janus Bi2Te3-based material, from the first-principles calculations. Compared with Bi2Se3/Bi2Te3 monolayers and corresponding Janus materials, the Bi2TeSe2 monolayer exhibits a much lower lattice thermal conductivity (κ) of 0.27 W/mK at 900 K because of stronger phonon anharmonicity and higher frequency phonon scattering. In addition, because the energy pockets around the valence band maximum show convergence character, the Seebeck coefficient (SC) of the p-type system is effectively enhanced. Combined with its intrinsic high electron transport properties, a high power factor of 3.48 mW/mK2 at 900 K is obtained for the p-type Bi2TeSe2 monolayer. The ultralow κ and enhanced SC of the Bi2TeSe2 monolayer eventually result in a significant optimal ZT value of 3.45 at 900 K. Thus, our study provides insights into the thermoelectric properties of the Bi2TeSe2 monolayer and may open up an effective avenue for applying bismuth-based materials to a high-temperature TE field.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Electrical property enhancement and lattice thermal conductivity reduction of n-type Mg3Sb1.5Bi0.5-based Zintl compound by In&Se co-doping

Tong Liu,Jiansong Liao,Hang Liu,Runyu Wang,Guocai Yuan,Jing Jiang,Yi Niu,Xiaobo Lei,Lihong Huang,Chao Wang,Qinyong Zhang

DOI: https://doi.org/10.1016/j.jmat.2022.11.012

IF: 8.589

2023-05-01

Journal of Materiomics

Abstract:Mg3Sb1.5Bi0.5-based Zintl compounds have attracted extensive attention as potential thermoelectric materials due to their earth-abundant elements. However, pure and intrinsic Mg3Sb1.5Bi0.5 manifests a poor thermoelectric performance because of its low electrical conductivity of about 3 × 102 S/m at room temperature. In this work, In and Se co-doping was carried out to optimize the thermoelectric performance of n-type Mg3Sb1.5Bi0.5-based material. The experimental results revealed that the carrier concentration and mobility of Mg3Sb1.5Bi0.5 significantly increased after In and Se co-doping, leading to an improvement of power factor. Simultaneously, lattice thermal conductivity was significantly reduced due to the large mass difference between In and Mg. A maximum zT of 1.64 at 723 K was obtained for the Mg3.17In0.03Sb1.5Bi0.49Se0.01 sample. And an average zT value of about 1.1 between 300 and 723 K was achieved, which insures its possible application at medium temperature range as a non-toxic and low-cost TE material.

materials science, multidisciplinary,chemistry, physical,physics, applied
Progressive carrier density optimization contributes to enhanced thermoelectric performance in Bi(Te, Se) compound

Xinxiu Cheng,Liqing Xu,Wei Liu,Xiangdong Ding,Wenke He,Yu Xiao

DOI: https://doi.org/10.1016/j.jallcom.2023.172817

IF: 6.2

2023-11-17

Journal of Alloys and Compounds

Abstract:Layered BiTe and BiSe compounds present promising n -type thermoelectric performance, but the intrinsic high carrier density limits ZT value near room temperature. In this work, thermoelectric performance in Bi(Te, Se) compound is significantly improved by progressively optimizing its carrier density. The room-temperature carrier density is reduced from ∼5.5 × 10 20 cm −3 in Bi 0.99 Te to ∼2.21 × 10 20 cm −3 in Bi 0.92 Sn 0.07 Te 0.4 Se 0.6 -2%Cu, which can lead to obvious enhancement of Seebeck coefficient and power factor, and thus the room-temperature power factor increases from ∼4.17 μW cm −1 K −2 in Bi 0.99 Te to ∼9.78 μW cm −1 K −2 in Bi 0.92 Sn 0.07 Te 0.4 Se 0.6 -2%Cu. Moreover, the largely suppressed total thermal conductivity in Bi 0.92 Sn 0.07 Te 0.4 Se 0.6 -2%Cu also benefit from lowered carrier density because of reduced electronic thermal conductivity, as well as intensified phonon scattering caused by imported point defects. Finally, a room-temperature ZT of ∼0.29 and a peak value of ∼0.41 at 373 K in Bi 0.92 Sn 0.07 Te 0.4 Se 0.6 -2%Cu are achieved successfully, which are ∼6 and ∼3 times higher than that in Bi 0.99 Te, respectively.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Enhanced Thermoelectric Performance of Bi–Se Co-Doped Cu1.8S Via Carrier Concentration Regulation and Multiscale Phonon Scattering

Ying-Hao Zhao,Zhi-Hang Shan,Wei Zhou,Rui Zhang,Jun Pei,He-Zhang Li,Jing-Feng Li,Zhen-Hua Ge,Yuan-Bing Wang,Bo-Ping Zhang

DOI: https://doi.org/10.1021/acsaem.2c00414

IF: 6.4

2022-01-01

ACS Applied Energy Materials

Abstract:Copper sulfides (Cu2-xS) have become potential thermoelectric (TE) materials because of their high element abundance, low toxicity, and high performance. A series of Cu1.8-2xBi2xS1-3xSe3x (0 <= x <= 0.03) bulks were fabricated using mechanical alloying and spark plasma sintering. The main Cu1.8S phase was obtained in all compositions of 0 <= x <= 0.03, and marginal Cu1.96S and Cu2S phases were detected at 0.02 <= x <= 0.03, which is attributed to the volatilization of sulfur and selenium. Benefiting from the introduced extra electronics by Bi3+ doping, the carrier concentration was optimized in 2.31x10(21) cm(-3). Multiscale defects introduced by Bi-Se co-doping, including secondary phases, micropores, and point defects (Bi-Cu(center dot center dot), Se-S(x), and V-S(center dot center dot)), strongly scattered the phonons, leading to a drastically decreased thermal conductivity from 2.71 W m(-1) K-1 for Cu1.8S at 773 K to 0.80 Wm(-1) K-1 for Cu1.74Bi0.06S0.91Se0.09. A maximum ZT of 0.78 was achieved for Cu1.74Bi0.06S0.91Se0.09 at 773 K, which is 144% higher than that of Cu1.8S (0.32). The current stress test confirms that Bi doping could improve the stability of Cu1.8S by suppressing the Cu ion migration. Our work demonstrates that Bi-Se co-doping is an effective way to enhance the TE properties for Cu1.8S.
Enhanced thermoelectric performance of p-type Bi2Si2Te6 enabled via synergistically optimizing carrier concentration and suppressing bipolar effect

Dongyi Shen,Ruihuan Cheng,Wenxuan Wang,Haiqi Li,Chen Chen,Qian Zhang,Yue Chen

DOI: https://doi.org/10.1016/j.mtphys.2023.101185

IF: 11.021

2023-07-01

Materials Today Physics

Abstract:Bipolar diffusion is regarded as an obstacle to improving thermoelectric performance because it dramatically deteriorates the thermopower and increases the thermal conductivity at high temperatures. Here, we propose two effective strategies, either substitution of Bi with Mn, or replacement of Si with Ge, to optimize the carrier concentration and suppress the bipolar effect in Bi2Si2Te6. The electrical resistivity is largely reduced and a compensation of the Seebeck coefficient by minority charge carriers is eliminated because of increased carrier concentration. Meanwhile, both Mn doping at Bi site and Ge alloying at Si site can achieve a larger DOS effective mass which is favorable to the Seebeck coefficient. Accordingly, the maximum power factor is considerably improved from 4.4 μW cm−1 K−2 for pristine Bi2Si2Te6 to 9.6 μW cm−1 K−2 for Bi1.97Mn0.03Si2Te6 and 9.2 μW cm−1 K−2 for Bi2Si1.8Ge0.2Te6. Furthermore, the lattice thermal conductivity is largely diminished by ∼40% at elevated temperatures, which is ascribed to the suppressed bipolar thermal conductivity and strengthened phonon scattering by extra substitutional point defects. As a result, a peak zT value of unity is achieved in both Bi1.98Mn0.02Si2Te6 and Bi2Si1.8Ge0.2Te6 at 773 K.

materials science, multidisciplinary,physics, applied

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