Abstract:Despite decades of extensive research on thermoelectric materials, Bi2Te3 alloys have dominated room-temperature applications. However, recent advancements have highlighted the potential of alternative candidates, notably Mg3Sb2-Mg3Bi2 alloys, for low- to mid-temperature ranges. This study optimizes the low-temperature composition of this alloy system through Nb addition (Mg3.2-xNbx(Sb0.3Bi0.7)1.996Te0.004), characterizing composition, microstructure, and transport properties. A high Mg3Bi2 content improves the band structure by increasing weighted mobility while enhancing the microstructure. Crucially, it suppresses detrimental grain boundary scattering effects for room-temperature applications. While grain boundary scattering suppression is typically achieved through grain growth, our study reveals that Nb addition significantly reduces grain boundary resistance without increasing grain size. This phenomenon is attributed to a grain boundary complexion transition, where Nb addition transforms the highly resistive Mg3Bi2-rich boundary complexion into a less resistive, metal-like interfacial phase. This marks the rare demonstration of chemistry noticeably affecting grain boundary interfacial electrical resistance in Mg3Sb2-Mg3Bi2. The results culminate in a remarkable advancement in zT, reaching 1.14 at 330 K. The device ZT is found to be 1.03 at 350 K, which further increases to 1.24 at 523 K and reaches a theoretical maximum device efficiency (ηmax) of 10.5% at 623 K, underscoring its competitive performance. These findings showcase the outstanding low-temperature performance of n-type Mg3Bi2-Mg3Sb2 alloys, rivaling Bi2Te3, and emphasize the critical need for continued exploration of complexion phase engineering to advance thermoelectric materials further.

High thermoelectric performance and anisotropy studies of n-type Mg3Bi2-based single crystal

Boosting room-temperature thermoelectric performance of Mg 3 Sb 1.5 Bi 0.5 material through breaking the contradiction between carrier concentration and carrier mobility

High-Performance Mg<sub>3</sub>Sb<sub>2-<i>x</i></sub>Bi<i><sub>x</sub></i> Thermoelectrics: Progress and Perspective

High performance of Mg3Bi1.5Sb0.5 based materials for power generation: Revealing the counter-intuitive effect of tuning Bi content on the thermoelectric properties

Maximizing the performance of n-type Mg3Bi2 based materials for room-temperature power generation and thermoelectric cooling

Na/Bi-co-doping and Heterogeneous Interfaces Leading to Enhanced Thermoelectric Performance of P-Type Mg3Sb2-based Zintls

High thermoelectric performance at room temperature of n-type Mg3Bi2-based materials by Se doping

Mg3(Bi,Sb)2 single crystals towards high thermoelectric performance

Realizing Ultrahigh Near-Room-Temperature Thermoelectric Figure of Merit for N-Type Mg3(Sb,Bi)2 through Grain Boundary Complexion Engineering with Niobium

High-Performance Mg3Sb2-xBix Thermoelectrics: Progress and Perspective

Wide-temperature-range thermoelectric n-type Mg3(Sb,Bi)2 with high average and peak zT values

High-Performance Low-Cost n-Type Se-Doped Mg3Sb2-Based Zintl Compounds for Thermoelectric Application

Metallic N-Type Mg3 Sb2 Single Crystals Demonstrate the Absence of Ionized Impurity Scattering and Enhanced Thermoelectric Performance.

Enhanced thermoelectric performance of n-type Mg3Bi2-based materials by Se doping and alloying engineering

Improved figure of merit (z) at low temperatures for superior thermoelectric cooling in Mg3(Bi,Sb)2

Optimization of Thermoelectric Property of n‐Type Mg3Sb2 Near Room Temperature via Mn&Se Co‐Doping

High thermoelectric performance of n-type Mg3Bi2 films deposited by magnetron sputtering

Interfacial Design Contributing to High Conversion Efficiency in Mg3(Sb, Bi)2/Bi2Te3 Thermoelectric Module with Superior Stability

Promoted application potential of p-type Mg3Sb1.5Bi0.5 for the matched thermal expansion with its n-type counterpart

Compromise between band structure and phonon scattering in efficient n-Mg3Sb2-Bi thermoelectrics

Synergy of grain size and texture effect for high-performance Mg3Sb2-based thermoelectric materials