Abstract:Despite decades of extensive research on thermoelectric materials, Bi2Te3 alloys have dominated room-temperature applications. However, recent advancements have highlighted the potential of alternative candidates, notably Mg3Sb2-Mg3Bi2 alloys, for low- to mid-temperature ranges. This study optimizes the low-temperature composition of this alloy system through Nb addition (Mg3.2-xNbx(Sb0.3Bi0.7)1.996Te0.004), characterizing composition, microstructure, and transport properties. A high Mg3Bi2 content improves the band structure by increasing weighted mobility while enhancing the microstructure. Crucially, it suppresses detrimental grain boundary scattering effects for room-temperature applications. While grain boundary scattering suppression is typically achieved through grain growth, our study reveals that Nb addition significantly reduces grain boundary resistance without increasing grain size. This phenomenon is attributed to a grain boundary complexion transition, where Nb addition transforms the highly resistive Mg3Bi2-rich boundary complexion into a less resistive, metal-like interfacial phase. This marks the rare demonstration of chemistry noticeably affecting grain boundary interfacial electrical resistance in Mg3Sb2-Mg3Bi2. The results culminate in a remarkable advancement in zT, reaching 1.14 at 330 K. The device ZT is found to be 1.03 at 350 K, which further increases to 1.24 at 523 K and reaches a theoretical maximum device efficiency (ηmax) of 10.5% at 623 K, underscoring its competitive performance. These findings showcase the outstanding low-temperature performance of n-type Mg3Bi2-Mg3Sb2 alloys, rivaling Bi2Te3, and emphasize the critical need for continued exploration of complexion phase engineering to advance thermoelectric materials further.

Realizing Ultrahigh Near-Room-Temperature Thermoelectric Figure of Merit for N-Type Mg3(Sb,Bi)2 through Grain Boundary Complexion Engineering with Niobium

Revelation of Inherently High Mobility Enables Mg3Sb2 As a Sustainable Alternative to N‐bi2te3 Thermoelectrics

Outstanding Room-Temperature Thermoelectric Performance of N-Type Mg3Bi2-Based Compounds Through Synergistically Combined Band Engineering Approaches

Mg3(Bi,Sb)2 single crystals towards high thermoelectric performance

Maximizing the performance of n-type Mg3Bi2 based materials for room-temperature power generation and thermoelectric cooling

Wide-temperature-range thermoelectric n-type Mg3(Sb,Bi)2 with high average and peak zT values

Maximizing the performance of n-type Mg 3 Bi 2 based materials for room-temperature power generation and thermoelectric cooling

Improved figure of merit (z) at low temperatures for superior thermoelectric cooling in Mg3(Bi,Sb)2

Boosting Room-Temperature Thermoelectric Performance of Mg3sb1.5bi0.5 Material Through Breaking the Contradiction Between Carrier Concentration and Carrier Mobility

Boosting room-temperature thermoelectric performance of Mg 3 Sb 1.5 Bi 0.5 material through breaking the contradiction between carrier concentration and carrier mobility

Metallic N-Type Mg3 Sb2 Single Crystals Demonstrate the Absence of Ionized Impurity Scattering and Enhanced Thermoelectric Performance.

High-Performance Mg<sub>3</sub>Sb<sub>2-<i>x</i></sub>Bi<i><sub>x</sub></i> Thermoelectrics: Progress and Perspective

High thermoelectric performance and anisotropy studies of n-type Mg3Bi2-based single crystal

Evolution of Nanometer-Scale Microstructure within Grains and in the Intergranular Region in Thermoelectric Mg3(Sb, Bi)2 Alloys

High Thermoelectric Performance at Room Temperature of N-Type Mg 3 Bi 2 -Based Materials by Se Doping

Robust Room Temperature Thermoelectric Performance of Mg3(Sb, Bi)2‐Based Alloys via Multivalent Mn Doping

High thermoelectric performance at room temperature of n-type Mg3Bi2-based materials by Se doping

Theoretical Study on Thermoelectric Performance of N-Type Mg-3 (Sb,Bi)(2) Single Crystal for Cooling or Power Generation

Excellent thermoelectric performance of boron-doped n-type Mg3Sb2-based materials via the manipulation of grain boundary scattering and control of Mg content

Realizing High Thermoelectric Performance in N‐Type Mg3(Sb, Bi)2‐Based Materials via Synergetic Mo Addition and Sb–Bi Ratio Refining

Bismuth-free Mg3Sb2 with Enhanced Room-Temperature Thermoelectric and Mechanical Properties