Abstract:Herein, a competitive ZT of ≈0.8 at 300 K and a high power factor greater than 30 μW cm−1 K−2 at 300 K in n‐type Mg3.14Mn0.06Bi1.4Sb0.59Se0.01 is reported, benefiting from the rationally tuned carrier concentration of 2.29 × 1019 cm−3 at room temperature. The high room temperature thermoelectric performance of n‐type Mn&Se co‐doped Mg3(Bi, Sb)2‐based materials makes them a highly competitive substitute for commercialized n‐type Bi2Te3. The Bi2Te3 family has been considered a state‐of‐the‐art thermoelectric material for room‐temperature applications for over half a century. However, scarcity of the material Te has been a persistent issue. Recently, the discovery of n‐type Mg3(Bi, Sb)2‐based materials provides new hope for replacing traditional Bi2Te3, but their thermoelectric properties near room temperature still need improvement for application to practical devices. Herein, a competitive figure of merit of ≈0.8 at 300 K and a high power factor greater than 30 μW cm−1 K−2 at 300 K in n‐type Mg3.14Mn0.06Bi1.4Sb0.59Se0.01 is reported, benefiting from the rationally tuned carrier concentration of 2.29×1019 cm−3 at room temperature. Substituting the Mg site with Mn in Mg3.2Bi1.4Sb0.59Se0.01 changes the dominant carrier scattering mechanism from a mixed scattering of acoustic phonons and ionized impurities to acoustic phonon scattering. Mn doping in Mg3.2Bi1.4Sb0.59Se0.01 also enhances the mobility to 180 cm2 V−1 s−1, reduces the thermal conductivity, and significantly increases the quality factor β of the material. The high room temperature thermoelectric performance of n‐type Mn&Se co‐doped Mg3(Bi, Sb)2‐based materials makes them a highly competitive substitute for commercialized n‐type Bi2Te3.

Na/Bi-co-doping and Heterogeneous Interfaces Leading to Enhanced Thermoelectric Performance of P-Type Mg3Sb2-based Zintls

Enhancing Thermoelectric Performance in P-type Mg3Sb2-based Zintls Through Optimization of Band Gap Structure and Nanostructuring

Synergistic Effect of Band and Nanostructure Engineering on the Boosted Thermoelectric Performance of n‐Type Mg3+δ(Sb, Bi)2 Zintls

Realizing a High <i>ZT</i> of 1.6 in N-Type Mg<sub>3</sub>Sb<sub>2</sub>-Based Zintl Compounds through Mn and Se Codoping

Extraordinary Thermoelectric Performance in N-Type Manganese Doped Mg3Sb2 Zintl: High Band Degeneracy, Tuned Carrier Scattering Mechanism and Hierarchical Microstructure

Electrical property enhancement and lattice thermal conductivity reduction of n-type Mg3Sb1.5Bi0.5-based Zintl compound by In&Se co-doping

Electronic Orbital Alignment and Hierarchical Phonon Scattering Enabling High Thermoelectric Performance P-Type Mg3Sb2 Zintl Compounds

Electronic Orbital Alignment and Hierarchical Phonon Scattering Enabling High Thermoelectric Performance p-Type Mg 3 Sb 2 Zintl Compounds

Optimization of Thermoelectric Property of n‐Type Mg3Sb2 Near Room Temperature via Mn&Se Co‐Doping

Significant Role of Mg Stoichiometry in Designing High Thermoelectric Performance for Mg3(Sb,Bi)2-Based N-Type Zintls.

Enhancing the Thermoelectric Performance of P-Type Mg3Sb2 Via Codoping of Li and Cd

High thermoelectric performance and anisotropy studies of n-type Mg3Bi2-based single crystal

Significantly enhanced thermoelectric properties of p-type Mg3Sb2 via co-doping of Na and Zn

Improvement of the Thermoelectric Properties of P-Type Mg3Sb2 by Mg-Site Double Substitution

Enhanced Thermoelectric Performance in P-Type Mg 3 Sb 2 Via Lithium Doping

Thermoelectric performance improvement of p-type Mg3Sb2-based materials by Zn and Ag co-doping

Enhancing the Thermoelectric Performance of n‐Type Mg3Sb2‐Based Materials via Ag Doping

Outstanding Room-Temperature Thermoelectric Performance of N-Type Mg3Bi2-Based Compounds Through Synergistically Combined Band Engineering Approaches

Promoted application potential of p-type Mg3Sb1.5Bi0.5 for the matched thermal expansion with its n-type counterpart

Tuning the Carrier Scattering Mechanism to Improve the Thermoelectric Performance of P-Type Mg3Sb1.5Bi0.5-based Material by Ge Doping

Boosting room-temperature thermoelectric performance of Mg 3 Sb 1.5 Bi 0.5 material through breaking the contradiction between carrier concentration and carrier mobility