Abstract:With a large band gap and a single Dirac cone responsible for the topological surface states, Bi2Se3 is widely regarded as a prototypical 3D topological insulator. Further applications of the bulk material has, however, been hindered by inherent structural defects that donate electrons and make the bulk conductive. Consequently, controlling these defects is of great interest for future technological applications, and while past literature has focused on adding external doping elements to the mixture, a complete study on undoped Bi2Se3 was still lacking. In this work, we use the self-flux method to obtain high-quality Bi2Se3 single-crystals in the entire concentration range available on the phase-diagram for the technique. By combining basic structural characterization with measurements of the resistivity, Hall effect and Shubnikov-de Haas (SdH) quantum oscillations, the effects of these impurities on the bulk transport are investigated in samples with electron densities ranging from 10^17 cm^-3 to 10^19 cm^-3, from Se-rich to Bi-rich mixtures, respectively, evidencing the transition into a degenerate semiconductor regime. We find that electron-donor impurities, likely Se vacancies, unavoidably shift the Fermi level up to 200 meV inside the conduction band. Other impurities, like interstitial Bi and Se, are shown to play a significant role as scattering centres, specially at low temperatures and in the decoherence of the SdH oscillations. Previous open questions on Bi2Se3, such as the upturn in resistivity below 30 K, the different scattering times in transport and quantum oscillations, and the presence of additional low mobility bands, are addressed. The results outlined here provide a concise picture on the bulk conducting states in flux-grown Bi2Se3 single crystals, enabling better control of the structural defects and electronic properties.

Huge permittivity and premature metallicity in Bi$_2$O$_2$Se single crystals

Electron-electron Scattering Dominated Electrical and Magnetotransport Properties in the Quasi-Two-dimensional Fermi Liquid Single-Crystal Bi2O2Se

Thermoelectric Properties of Bi2O2Se Single Crystals

Giant modulation of the electron mobility in semiconductor Bi$_2$O$_2$Se via incipient ferroelectric phase transition

Giant Modulation of the Electron Mobility in Semiconductor Bi2O2Se via Incipient Ferroelectric Phase Transition

Highly Insulating Phase of Bi 2 O 2 Se Thin Films with High Electronic Performance

Highly insulating phase of Bi2O2Se thin films with high electronic performance

Tunable lattice dynamics and dielectric functions of two-dimensional Bi2O2Se: Striking layer and temperature dependent effects

Synthesis and Electrical Transport Properties of Bi2O2Se Single Crystals

Electronic and thermoelectric properties of semiconducting Bi2SSe2 and Bi2S2Se monolayers with high optical absorption.

High Electron Mobility and Quantum Oscillations in Non-Encapsulated Ultrathin Semiconducting Bi2O2Se.

Low Residual Carrier Concentration and High Mobility in 2D Semiconducting Bi2O2Se

In-depth Understanding of the Band Alignment and Interface States Scenario in Bi2O2Se/SrTiO3 Ultrathin Heterojunction

First-Principles Study on Thermoelectric Properties of Bi _2 O _2 Se

Bulk conducting states of intrinsically doped Bi$_2$Se$_3$

Bi2O2Se: A rising star for semiconductor devices

Ultrathin Semiconducting Bi2Te2S and Bi2Te2Se with High Electron Mobilities.

Exploring the high dielectric performance of Bi2SeO5: from bulk to bilayer and monolayer

Electrical Scattering Mechanism Evolution in Un-Doped and Halogen-Doped Bi2O2Se Single Crystals.

High performance and low thermal conductivity in Bi<sub>2</sub>Se<sub>3</sub> induced by the synergistic regulation of a resonant energy level and microstructure prepared by Se slow-release method

Two-dimensional Bi2SeO2 and Its Native Insulators for Next-Generation Nanoelectronics