Exploring the high dielectric performance of Bi2SeO5: from bulk to bilayer and monolayer

Xinyue Dong,Yuyu He,Yue Guan,Yuanhao Zhu,Jinxiong Wu,Huixia Fu,Binghai Yan

DOI: https://doi.org/10.1007/s40843-023-2737-8

2024-02-04

Science China Materials

Abstract:Bi 2 SeO 5 has garnered considerable attention as a van der Waals (vdW) layered dielectric material featuring excellent electrical insulation properties. However, the related theoretical understanding of the dielectric properties of atomically thin films is still lacking. Here, we conducted the first-principles calculations to determine the dielectric performance of Bi 2 SeO 5 , showing a high average dielectric constant ( ε ) of >20 ranging from bulk to bilayer and monolayer. Besides, the conduction and valance band offsets between the monolayer Bi 2 SeO 5 and bilayer Bi 2 O 2 Se were calculated to be greater than 1 eV, suggesting that monolayer Bi 2 SeO 5 works well as the dielectric for atomically thin Bi 2 O 2 Se. Unlike h-BN or other two-dimensional (2D) vdW insulators, ε of Bi 2 SeO 5 is dominated by its ionic component and remains nearly constant as the thickness decreases, demonstrating an ultralow equivalent oxide thickness (EOT) of 0.3 nm for its monolayer form. Moreover, the high ε of monolayer Bi 2 SeO 5 survives under tensile or compressive strains up to 6%, which greatly facilitates its integration with various 2D semiconductors. Our work suggests that Bi 2 SeO 5 ultrathin films can serve as excellent atomically flat encapsulation and dielectric layers for high-performance 2D electronic devices.

materials science, multidisciplinary

What problem does this paper attempt to address?

The problem that this paper attempts to solve is related to the dielectric properties of Bi₂SeO₅ materials at different thicknesses and its potential as a high - dielectric - constant (high - κ) gate insulating layer in two - dimensional electronic devices. Specifically:

1. **Lack of theoretical understanding**: Currently, the theoretical understanding of the dielectric properties of atomic - level thin - film Bi₂SeO₅ is still insufficient. In particular, whether monolayer Bi₂SeO₅ can still serve as a good insulating layer for Bi₂O₂Se requires further research.

2. **Stability of dielectric constant**: The research aims to explore the changes in the dielectric constant (ε) from the bulk to bilayer and then to monolayer Bi₂SeO₅, especially whether its dielectric constant remains stable when the thickness decreases.

3. **Band gap and band alignment**: By calculating the conduction - band offset (CBO) and valence - band offset (VBO) between monolayer Bi₂SeO₅ and bilayer Bi₂O₂Se, verify whether monolayer Bi₂SeO₅ meets the requirements as a high - dielectric - material.

4. **Dielectric properties under strain**: Study the changes in the dielectric constant of monolayer Bi₂SeO₅ under different strain conditions (tensile and compressive strains) to evaluate its stability in practical applications.

5. **Mechanical properties**: Evaluate the mechanical stability and flexibility of monolayer and bilayer Bi₂SeO₅ under biaxial strain by calculating their elastic constants.

### Main findings:
- **High and stable dielectric constant**: The dielectric constant (ε) of monolayer Bi₂SeO₅ exceeds 20 at different thicknesses, showing a high dielectric constant and little change with thickness.
- **Ion - dominated contribution**: The dielectric constant of Bi₂SeO₅ is mainly determined by ion - dominated contribution, which is relatively rare in existing research.
- **Low equivalent oxide thickness (EOT)**: The EOT of monolayer Bi₂SeO₅ is only 0.3 nm, meeting the strict requirements of sub - 0.5 nm technology nodes.
- **Strain - tuned dielectric constant**: Within the strain range (- 6% to + 6%), the dielectric constant of monolayer Bi₂SeO₅ shows significant tuning characteristics, especially in the out - of - plane direction, where the dielectric constant increases from 13.91 to 18.21.
- **Good mechanical properties**: Monolayer and bilayer Bi₂SeO₅ show good mechanical stability and flexibility under biaxial strain.

### Conclusion:
Through systematic first - principles calculations, the dielectric properties of Bi₂SeO₅ in different configurations and its strain - tuning characteristics were studied. The results show that monolayer Bi₂SeO₅ not only has a high dielectric constant and low EOT, but also exhibits excellent mechanical properties and strain - tuning ability, making it an ideal candidate material for high - dielectric - constant gate insulating layers in future high - performance two - dimensional electronic devices.