Abstract:Two-dimensional (2D) atomic-layered heterostructures stacked by van der Waals interactions recently introduced new research fields, which revealed novel phenomena and provided promising applications for electronic, optical, and optoelectronic devices. In this study, we report the van der Waals epitaxial growth of high-quality atomically thin Bi2Se3 on single crystalline hexagonal boron nitride (h-BN) by chemical vapor deposition. Although the in-plane lattice mismatch between Bi2Se3 and h-BN is approximately 65%, our transmission electron microscopy analysis revealed that Bi2Se3 single crystals epitaxially grew on h-BN with two commensurate states; that is, the (1̅21̅0) plane of Bi2Se3 was preferably parallel to the (1̅100) or (1̅21̅0) plane of h-BN. In the case of the Bi2Se3 (2̅110) ∥ h-BN (11̅00) state, the Moiré pattern wavelength in the Bi2Se3/h-BN superlattice can reach 5.47 nm. These naturally formed thin crystals facilitated the direct assembly of h-BN/Bi2Se3/h-BN sandwiched heterostructures without introducing any impurity at the interfaces for electronic property characterization. Our quantum capacitance (QC) measurements showed a compelling phenomenon of thickness-dependent topological phase transition, which was attributed to the coupling effects of two surface states from Dirac Fermions at/or above six quintuple layers (QLs) to gapped Dirac Fermions below six QLs. Moreover, in ultrathin Bi2Se3 (e.g., 3 QLs), we observed the midgap states induced by intrinsic defects at cryogenic temperatures. Our results demonstrated that QC measurements based on h-BN/Bi2Se3/h-BN sandwiched structures provided rich information regarding the density of states of Bi2Se3, such as quantum well states and Landau quantization. Our approach in fabricating h-BN/Bi2Se3/h-BN sandwiched device structures through the combination of bottom-up growth and top-down dry transferring techniques can be extended to other two-dimensional layered heterostructures.

Density functional theory study of two-dimensional bismuth selenite: layer-dependent electronic, transport and optical properties with spin-orbit coupling.

Materials properties and device applications of semiconducting bismuth oxyselenide

Raman Spectra and Strain Effects in Bismuth Oxychalcogenides

2D Bi2Se3 materials for optoelectronics

Recent Progress in Two-Dimensional Bi2O2Se and Its Heterostructures.

Tunable lattice dynamics and dielectric functions of two-dimensional Bi2O2Se: Striking layer and temperature dependent effects

Progress Report on Property, Preparation, and Application of Bi2O2Se

Spin-Orbit Coupling Electronic Structures of Organic-Group Functionalized Sb and Bi Topological Monolayers

Thickness-modulated Electronic Band Structures and Exciton Behavior of Non-Van-der-waals 2D Bi2O2Se Films

Electronic and thermoelectric properties of semiconducting Bi2SSe2 and Bi2S2Se monolayers with high optical absorption.

Exploring the high dielectric performance of Bi2SeO5: from bulk to bilayer and monolayer

Controlled Synthesis of High-Mobility Atomically Thin Bismuth Oxyselenide Crystals

Exploring the High Dielectric Performance of Bi 2 SeO 5 : from Bulk to Bilayer and Monolayer

Thickness-modulated Electronic Band Structures and Exciton Behavior of Non-Van-der-waals 2D Bi2O2Se 2 O 2 Se Films

Spin–orbit coupling effect on electronic, linear and nonlinear optical properties of Bi2S3 and the ternary bismuth sulfide Bi2S2.75Se0.25: Ab-initio calculations

Structure-Dependent Optical Properties of Self-Organized Bi2Se3 Nanostructures: from Nanocrystals to Nanoflakes.

Van Der Waals Epitaxial Growth of Atomically Thin Bi2se3 and Thickness-Dependent Topological Phase Transition

Recent Progress on Synthesis and Optical Characterization of Two-Dimensional Bi2O2Se

Emerging two‐dimensional bismuth oxychalcogenides for electronics and optoelectronics

Realizing a Superconducting Square-Lattice Bismuth Monolayer

Bi2O2Se: A rising star for semiconductor devices