Abstract:Ever since the identification of graphene, research on two-dimensional (2D) materials has garnered significant attention. As a typical layered bismuth oxyselenide, Bi2O2Se has attracted growing interest not only due to its conventional thermoelectricity but also because of the excellent optoelectronic properties found in the 2D limit. Moreover, 2D Bi2O2Se exhibits remarkable properties, including high carrier mobility, air stability, tunable band gap, unique defect characteristics, and favorable mechanical properties. These properties make it a promising candidate for next-generation electronic and optoelectronic devices, such as logic devices, photodetectors, sensors, energy technologies, and memory devices. However, despite significant progress, there are still challenges that must be addressed for widespread commercial use. This review provides an overview of progress in Bi2O2Se research. We start by introducing the crystal structure and physical properties of Bi2O2Se and a compilation of methods for modulating its physical properties is further outlined. Then, a series of methods for synthesizing high-quality 2D Bi2O2Se are summarized and compared. We next focus on the advancements made in the practical applications of Bi2O2Se in the fields of field-effect transistors (FETs), photodetectors, neuromorphic computing and optoelectronic synapses. As heterostructures induce a new degree of freedom to modulate the properties and broaden applications, we especially discuss the heterostructures and corresponding applications of Bi2O2Se integrated with 0D, 1D and 2D materials, providing insights into constructing heterojunctions and enhancing device performance. Finally, the development prospects for Bi2O2Se and future challenges are discussed.

High Electron Mobility and Quantum Oscillations in Non-Encapsulated Ultrathin Semiconducting Bi2O2Se.

High Mobility and Quantum Oscillations in Semiconducting Bi2O2Te Nanosheets Grown by Chemical Vapor Deposition

Electronic Structures and Unusually Robust Bandgap in an Ultrahigh-Mobility Layered Oxide Semiconductor, Bi2O2Se.

Electron-electron Scattering Dominated Electrical and Magnetotransport Properties in the Quasi-Two-dimensional Fermi Liquid Single-Crystal Bi2O2Se

In-depth Understanding of the Band Alignment and Interface States Scenario in Bi2O2Se/SrTiO3 Ultrathin Heterojunction

Quantum Oscillations and Nontrivial Transport in (Bi0.92in0.08)2se3

Bi2O2Se Nanowires Presenting High Mobility and Strong Spin-Orbit Coupling

High-quality BN/WSe2/BN heterostructure and its quantum oscillations

Bi2O2Se: A rising star for semiconductor devices

In-depth Understanding of the Band Alignment and Interface States Scenario in Bi_2O_2Se/SrTiO_3 Ultrathin Heterojunction

Ultrathin Semiconducting Bi2Te2S and Bi2Te2Se with High Electron Mobilities.

Molecular Beam Epitaxy and Electronic Structure of Atomically Thin Oxyselenide Films.

Ultrahigh Hall Mobility and Suppressed Backward Scattering in Layered Semiconductor Bi2O2Se

Huge permittivity and premature metallicity in Bi$_2$O$_2$Se single crystals

Electric Control of Helicity-Dependent Photocurrent and Surface Polarity Detection on Two-Dimensional Bi2O2Se Nanosheets.

Ultrahigh responsivity of non-van der Waals Bi2O2Se photodetector

The Discovery of a High-Mobility Two-Dimensional Bismuth Oxyselenide Semiconductor and Its Application in Nonvolatile Neuromorphic Devices

Strong spin-orbit interaction and magnetotransport in semiconductor Bi 2 O 2 Se nanoplates.

Coplanar High Mobility and Interplanar Van Der Waals Heterojunction in Layered Two-Dimensional Bi2O2Se Nanosheets

Recent Progress in Two-Dimensional Bi2O2Se and Its Heterostructures.

Observations of a metal-insulator transition and strong surface states in Bi2-x SbxSe3 thin films.