Abstract:Individual relaxation dynamics of electrons and holes in optically pumped semiconductors is rarely observed due to their overlap. Here we report the individual dynamics of long-lived (~200 mks) holes observed at room temperature in a 10 nm thick film of the 3D topological insulator (TI) Bi2Se3 coated with a 10 nm thick MgF2 layer using transient absorption spectroscopy in the UV-Vis region. The ultraslow hole dynamics was observed by applying multiphoton resonant pumping of massless Dirac fermions and bound valence electrons in Bi2Se3 at a certain wavelength sufficient for their photoemission and subsequent trapping at the Bi2Se3/MgF2 interface. The emerging deficit of electrons in the film makes it impossible for the remaining holes to recombine, thus causing their ultraslow dynamics measured at a specific probing wavelength. We also found an extremely long rise time (~600 ps) for this ultraslow optical response, which is due to the large spin-orbit coupling (SOC) splitting at the valence band maximum and the resulting intervalley scattering between the splitting components. The ultraslow hole dynamics in Bi2Se3 due to the presence of the Bi2Se3/MgF2 interface is nevertheless much faster than the known ultraslow electron dynamics at the Si/SiO2 interface, also induced by multiphoton excitation in Si. The observed dynamics of long-lived holes is gradually suppressed with decreasing Bi2Se3 film thickness for the 2D TI Bi2Se3 (film thickness 5, 4, and 2 nm) due to the loss of resonance conditions for multiphoton photoemission caused by the gap opening at the Dirac surface state nodes. This behavior indicates that the dynamics of massive Dirac fermions predominantly determines the relaxation of photoexcited carriers for both the 2D topologically nontrivial and 2D topologically trivial insulator phases.

Nanosecond dynamics in intrinsic topological insulator $\text{Bi}_{2-x}\text{Sb}_x\text{Se}_3$ revealed by time-resolved optical reflectivity

Ultrafast carrier dynamics in thin-films of the topological insulator Bi2Se3

Spatially resolved femtosecond pump-probe study of topological insulator Bi2Se3

Revealing Optical Transitions and Carrier Recombination Dynamics within the Bulk Band Structure of Bi2Se3

Ultrafast Carrier Dynamics Of Bi2o2se Nanoplates In The Nonlinear Excitation Regime

Ultrafast Carrier and Phonon Dynamics in Bi2se3 Crystals

Observation of ultraslow hole dynamics in the 3D topological insulator Bi2Se3 coated with a thin MgF2 layer using multiphoton pumped UV-Vis transient absorption spectroscopy

Clarifying Ultrafast Carrier Dynamics in Ultrathin Films of the Topological Insulator Bi 2 Se 3 Using Transient Absorption Spectroscopy

Characterization of charge-carrier dynamics at the Bi2Se3/MgF2interface by multiphoton pumped UV-Vis transient absorption spectroscopy

Coherent surface-to-bulk vibrational coupling in the 2D topologically trivial insulator Bi2Se3 monitored by ultrafast transient absorption spectroscopy

Characterization of the Dynamics of the Tunable Topological Crystalline Insulator Pb1−xSnxSe Using Optical Pump-Terahertz Probe Measurements

Optical Properties and Photocarrier Dynamics of Bi2O2Se Monolayer and Nanoplates

Optical Study on Topological Superconductor Candidate Sr-doped Bi2Se3

Ultrafast Spectroscopy of Bi2Se3 Topological Insulator

Ultrafast Optical Excitation of a Persistent Surface-State Population in the Topological Insulator Bi2Se3

Ultrafast dynamics of Dirac surface and bulk photocarriers in topological-insulator bismuth telluride nanocrystals using terahertz spectroscopy

Metal-Insulator Transition in Variably Doped (Bi1-xSbx)2Se3 Nanosheets

Gigantic Surface Lifetime Of An Intrinsic Topological Insulator

Impurity band assisted carrier relaxation in Cr doped topological insulator Bi 2 Se 3

Impurity Band Assisted Carrier Relaxation in Cr Doped Topological Insulator Bi2Se3

Intrinsic electron-phonon resistivity of Bi2Se3 in the topological regime