Nanosecond dynamics in intrinsic topological insulator $\text{Bi}_{2-x}\text{Sb}_x\text{Se}_3$ revealed by time-resolved optical reflectivity

Adam L. Gross,Yasen Hou,Antonio Rossi,Dong Yu,Inna M. Vishik

DOI: https://doi.org/10.1103/PhysRevB.103.L020301

2021-01-27

Abstract:$\text{Bi}_2\text{Se}_3$ is an ideal three-dimensional topological insulator in which the chemical potential can be brought into the bulk band gap with antimony doping. Here, we utilize ultrafast time-resolved transient reflectivity to characterize the photoexcited carrier decay in $\text{Bi}_{2-x}\text{Sb}_x\text{Se}_3$ nanoplatelets. We report a substantial slowing of the bulk carrier relaxation time in bulk-insulating $\text{Bi}_{2-x}\text{Sb}_x\text{Se}_3$ nanoplatelets as compared to $n$-type bulk-metallic $\text{Bi}_2\text{Se}_3$ at low temperatures, which approaches $3.3 \text{ ns}$ in the zero pump fluence limit. This long-lived decay is correlated across different fluences and antimony concentrations, revealing unique decay dynamics not present in $n$-type $\text{Bi}_2\text{Se}_3$, namely the slow bimolecular recombination of bulk carriers.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

This paper aims to solve the following problems:

1. **Understanding the dynamic behavior of photo - excited carriers in three - dimensional topological insulators**: Specifically, through ultrafast transient reflectivity measurements, the authors studied the decay dynamics of photo - excited carriers in Bi₂₋ₓSbₓSe₃ nanosheets under different antimony (Sb) doping concentrations, pump energy densities and temperature conditions. They found that in the intrinsically insulating Bi₂₋ₓSbₓSe₃, the lifetime of photo - excited carriers is significantly extended to 3.3 nanoseconds, while in n - type metallic Bi₂Se₃, this lifetime is only a few picoseconds.

2. **Revealing the unique decay mechanism**: The paper points out that this long - lifetime decay is related to the bimolecular recombination process, that is, the recombination rate of electron - hole pairs generated by photo - excitation in the bulk material changes linearly with the excitation density. This phenomenon has not been reported in previous studies, especially no similar behavior has been seen in other three - dimensional topological insulator materials.

3. **Investigating the influence of doping on carrier dynamics**: By changing the Sb doping concentration, the authors observed that the carrier lifetime increases monotonically with the increase of the doping amount. This indicates that doping not only affects the electrical properties of the material but also profoundly changes the recombination dynamics of photo - excited carriers.

4. **Exploring possible physical mechanisms**: The authors discussed that these long - lifetime carriers may be related to phenomena such as exciton condensation and proposed directions for further research. In particular, they pointed out that these results are of great significance for understanding the photoelectric effect of surface states.

In summary, this paper attempts to experimentally reveal the unique dynamic behavior of photo - excited carriers in the three - dimensional topological insulator Bi₂₋ₓSbₓSe₃ and explore the underlying physical mechanisms, providing theoretical basis and technical support for future applications in this field.