Abstract:MnBi$_{2}$Te$_{4}$, the first topological insulator with inherent magnetic ordering, has attracted significant attention recently for providing a platform to realize several exotic quantum phenomena at relatively higher temperatures. In this work, we have carried out an exhaustive investigation of MnBi$_{2}$Te$_{4}$ and Sb doped MnBi$_{2}$Te$_{4}$ thin films using THz time-domain spectroscopy. The extracted real THz conductivity displays a strong IR active E$_u$ phonon absorption peak (at $\sim$1.5 THz) merged on top of the Drude-like contributions from bulk and surface electrons. The extracted parameters from the THz conductivity data fitted to the Drude-Fano-Lorentz model, show significant changes in their temperature dependence around the magnetic ordering Néel temperature of $\sim$ 25K, which is suggestive of the coupling between magnetic ordering and electronic band structure. The frequency of the E$_u$ phonon displays an anomalous blue-shift with increasing temperatures by $\sim$ 0.1 THz ($\sim$7 %) for MnBi$_{2}$Te$_{4}$ and $\sim$0.2 THz ($\sim$13 %) for Sb doped MnBi$_{2}$Te$_{4}$ between 7K and 250K. The line-shape of the E$_u$ phonon mode in Sb doped MnBi$_{2}$Te$_{4}$ shows significant Fano asymmetry compared to that of MnBi$_{2}$Te$_{4}$, indicating that Sb doping plays an important role in the Fano interference between the phonons and the electrons, in this system. These results indicate that the anomalous phonon behaviour seen in MBT arise mainly from positive cubic anharmonicity induced self energy parameter, whereas both anharmonicity and the electron phonon coupling are at play in making the relatively higher anomalous blue shift of phonons in MBST. Our studies provide the first comprehensive understanding of the phonon and electron dynamics of MnBi$_{2}$Te$_{4}$ and Sb doped MnBi$_{2}$Te$_{4}$ in the THz range using time-domain THz spectroscopy.

Polarization-resolved Raman resonant excitation of surface and bulk electronic bands and phonons in MBE grown topological insulator thin films

Resonance Raman Scattering of Topological Insulators Bi2Te3 and Bi2 − xSbxTe3 − ySey Thin Films

Photoemission Circular Dichroism and Spin Polarization of the Topological Surface States in UltrathinBi2Te3Films

Electronic and Vibrational Excitations on the Surface of the Three-Dimensional Topological Insulator Bi$_2$Te$_{3-x}$Se$_{x}$ (x = 0, 2, 3)

In Situ Raman Spectroscopy of Topological Insulator Bi2Te3 Films with Varying Thickness

Stability Of The Bi2se3(111) Topological State: Electron-Phonon And Electron-Defect Scattering

Study of dielectric polarization and electrical transport in Bi1·2Sb0·8Te0·4Se2.6 nanofilms

Coherent surface-to-bulk vibrational coupling in the 2D topologically trivial insulator Bi2Se3 monitored by ultrafast transient absorption spectroscopy

Ultrafast dynamics of Dirac surface and bulk photocarriers in topological-insulator bismuth telluride nanocrystals using terahertz spectroscopy

Band Structure of Topological Insulator BiSbTe1.25Se1.75

Manifestation of a Second Dirac Surface State and Bulk Bands in THz Radiation from Topological Insulators

Investigation of thermoelectric and magnetotransport properties of single crystalline Bi2Se3 topological insulator

Intrinsic conduction through topological surface states of insulating Bi2Te3 epitaxial thin films

Enhancement in surface mobility and quantum transport of Bi2-xSbxTe3-ySey topological insulator by controlling the crystal growth conditions

Thickness-dependent Carrier and Phonon Dynamics of Topological Insulator Bi2Te3 Thin Films.

Oscillatory surface dichroism of an insulating topological insulator Bi2Te2Se

Oscillatory Surface Dichroism Of The Insulating Topological Insulator Bi2te2se

Investigation of magnetic order influenced phonon and electron dynamics in MnBi$_{2}$Te$_{4}$ and Sb doped MnBi$_{2}$Te$_{4}$ through terahertz time-domain spectroscopy

Electron-Phonon Coupling on the Surface of Topological Insulators

Surface phonons and possible structural phase transition in a topological semimetal PbTaSe2

Polarized Temperature Dependent Raman Study of Bi2Te3-Cr2Ge2Te6 heterostructure and the Ferromagnetic Insulator Cr2Ge2Te6