Abstract:Alloys of Bi2Te3 and Sb2Te3 [(Bi1-xSbx)(2)Te-3] have played an essential role in the exploration of topological surface states, allowing us to study phenomena that would otherwise be obscured by bulk contributions to conductivity. Despite intensive transport and angle resolved photoemission (ARPES) studies, important questions about this system remain unanswered. For example, previous studies reported the chemical tuning of the Fermi level to the Dirac point by controlling the Sb: Bi composition ratio, but the optimum ratio varies widely across various studies. Moreover, it is unclear how the quasiparticle lifetime is affected by the disorder resulting from Sb/Bi alloying. In this work, we use scanning tunneling microscopy and spectroscopy to study the electronic structure of epitaxially grown (Bi,Sb)(2)Te-3 thin films at the nanoscale. We study Landau levels (LLs) to determine the effect of disorder on the quasiparticle lifetime as well as the position of the Dirac point with respect to the Fermi energy. A plot of the LL peak widths shows that despite the intrinsic disorder, the quasiparticle lifetime is not significantly degraded. We further determine that the ideal Sb concentration to place the Fermi energy to within a few meV of the Dirac point is x similar to 0.7, but that postannealing temperatures can have a significant effect on the crystallinity and Fermi level position. Specifically, high postgrowth annealing temperature can result in better crystallinity and surface roughness, but also produces a larger Te defect density which adds n-type carriers. Finally, in combination with quasiparticle interference imaging, the dispersion is revealed over a large energy range above the Fermi energy, in a regime inaccessible to ARPES. Interestingly, the surface state dispersion for the x similar to 0.7 sample shows great similarity to pristine Bi2Te3. This work provides microscopic information on the role of disorder and composition in determining carrier concentration, surface state dispersion, and quasiparticle lifetime in (Bi1-xSbx)(2)Te-3.

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Topological Limit of Ultrathin Quasi-Free-standing Bi2Te3films Grown on Si(111)

Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si

Interface Structure of A Topological Insulator/Superconductor Heterostructure

Growth of Topological Insulator Bi2te3 Ultrathin Films on Si(111) Investigated by Low-Energy Electron Microscopy

Stability Of The Bi2se3(111) Topological State: Electron-Phonon And Electron-Defect Scattering

Epitaxial Growth of Free-Standing Bismuth Film on Graphene Embedded with Nontrivial Properties

Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit.

Sierpiński Structure and Electronic Topology in Bi Thin Films on InSb(111)B Surfaces

Interfacial protection of topological surface states in ultrathin Sb films.

Topologically Nontrivial Bismuth(111) Thin Films Grown on Bi2Te3

Electronic structures of topological insulator Bi2Te3 surfaces with non-conventional terminations

Molecular Beam Epitaxy of Bilayer Bi(111) Films on Topological Insulator Bi2te3: A Scanning Tunneling Microscopy Study

Atomically smooth ultrathin films of topological insulator Sb 2 Te 3

Topological Insulator Sb2Te3 Thin Films Grown by MBE

The emergence of topologically protected surface states in epitaxial Bi(111) thin films

Structural Stability And Topological Surface States Of The Snte (111) Surface

Band Structure Engineering in (Bi(1-X)sb(x))(2)te(3) Ternary Topological Insulators.

Interfacial-state coupling induced topological phase transitions in SnTe (110) thin film

Role of Defects in the Carrier-Tunable Topological-Insulator (Bi1-Xsbx)(2)te-3 Thin Films

Scanning tunneling microscopy study of the possible topological surface states in BiTeCl