Growth of Topological Insulator Bi2te3 Ultrathin Films on Si(111) Investigated by Low-Energy Electron Microscopy

H. W. Liu,H. T. Yuan,N. Fukui,L. Zhang,J. F. Jia,Y. Iwasa,M. W. Chen,T. Hashizume,T. Sakurai,Q. K. Xue
DOI: https://doi.org/10.1021/cg1007457
IF: 4.01
2010-01-01
Crystal Growth & Design
Abstract:The molecular beam epitaxy growth of topological insulator Bi 2 Te 3 thin films on Si(111) substrates has been investigated in situ by low-energy electron microscopy. The crystal structure and surface morphology during growth were directly revealed, which enables us to identify the optimal growth conditions for single crystalline Bi 2 Te 3 films. The formation of thin films is preceded by several surface structures, including a wetting layer and a Te/Bi-terminated Si(111)-1×1 reconstruction. Raman scattering spectra and AFM measurements indicate that, under Te-rich conditions, single crystalline films of Bi 2 Te 3 grow along the [111] direction in a layer-by-layer mode. Transport measurements prove the insulating behavior of the films grown in this way.
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