Abstract:AbstractUltrathin two‐dimensional transition‐metal dichalcogenides (TMDs) have been pursued extensively in recent years for interesting physics and application potentials. For the latter, it is essential to synthesize crystalline TMD monolayers at wafer‐scale. Here, we report growth of single‐crystalline MSe2 (M = Mo, W) monolayers at wafer‐scale by molecular‐beam epitaxy at low temperatures (200–400°C) on nominally flat Au(1 1 1) substrates. The epifilms have low intrinsic defect densities of low 1012 cm−2. The grown films have then been exfoliated and transferred onto SiO2/Si by a wet chemical process, on which some optical measurements are performed, revealing high spatial uniformity of the samples. We also establish that MSe2 grows on Au via the van der Waals epitaxy mechanism, where a continuous film extends across the whole surface, overhangs atomic‐layer steps on substrate. We identify that the growth of highly crystalline MSe2 is promoted by an enhanced interaction between Au substrate and MSe2 islands rather than by the guidance of surface steps on substrate. The latter only arrests MSe2 lateral growth if they are multilayer high.Key points MBE growth of wafer‐scale highly crystalline TMD monolayers at low‐temperature is achieved. Island‐substrate interaction is found to play a critical role in vdW epitaxy of single‐crystalline TMDs on on‐axis substates. The TMD monolayers are of high uniformity and low intrinsic defect density.

Quintuple-layer epitaxy of high-quality Bi2Se3 thin films for topological insulator

Quintuple-Layer Epitaxy Of Thin Films Of Topological Insulator Bi2se3

Epitaxial Growth of Bi 2 Se 3 Topological Insulator Thin Films on Si ( 111 )

Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface

Van der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface: An approach to prepare high-quality thin films of topological insulator

Topological Insulator Bi2Se3 Thin Films Grown on Double-Layer Graphene by Molecular Beam Epitaxy

Molecular beam epitaxial growth of topological insulators.

Wafer‐scale Single‐crystalline MoSe2 and WSe2 Monolayers Grown by Molecular‐beam Epitaxy at Low‐temperature — the Role of Island‐substrate Interaction and Surface Steps

Interface Structure of A Topological Insulator/Superconductor Heterostructure

Growth of quantum well films of topological insulator Bi2Se3 on insulating substrate

Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit.

Epitaxial Growth of High Mobility Bi2Se3 Thin Films on CdS

Epitaxial Growth of Free-Standing Bismuth Film on Graphene Embedded with Nontrivial Properties

Topological Limit of Ultrathin Quasi-Free-standing Bi2Te3films Grown on Si(111)

Growth of Topological Insulator Bi2te3 Ultrathin Films on Si(111) Investigated by Low-Energy Electron Microscopy

Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si

Atomically smooth ultrathin films of topological insulator Sb 2 Te 3

2D Bi2Se3 van der Waals Epitaxy on Mica for Optoelectronics Applications

Growth and band alignment of Bi2Se3 topological insulator on H-terminated Si(111) van der Waals surface

Growth of Ultrathin Bi$_2$Se$_3$ Films by Molecular Beam Epitaxy

Ordered Growth of Topological Insulator Bi2Se3 Thin Films on Dielectric Amorphous SiO2 by MBE