Abstract:Formation of topological quantum phase on conventional semiconductor surface is of both scientific and technological interest. Here, we demonstrate epitaxial growth of 2D topological insulator, i.e. quantum spin Hall (QSH) state, on Si(111) surface with a large energy gap, based on first-principles calculations. We show that Si(111) surface functionalized with 1/3 monolayer of halogen atoms [Si(111)-sqrt(3) x sqrt(3)-X (X=Cl, Br, I)] exhibiting a trigonal superstructure, provides an ideal template for epitaxial growth of heavy metals, such as Bi, which self-assemble into a hexagonal lattice with high kinetic and thermodynamic stability. Most remarkably, the Bi overlayer is "atomically" bonded to but "electronically" decoupled from the underlying Si substrate, exhibiting isolated QSH state with an energy gap as large as 0.8 eV. This surprising phenomenon is originated from an intriguing substrate orbital filtering effect, which critically select the orbital composition around the Fermi level leading to different topological phases. Particularly, the substrate-orbital-filtering effect converts the otherwise topologically trivial freestanding Bi lattice into a nontrivial phase; while the reverse is true for Au lattice. The underlying physical mechanism is generally applicable, opening a new and exciting avenue for exploration of large-gap topological surface/interface states.

Growth and band alignment of Bi2Se3 topological insulator on H-terminated Si(111) van der Waals surface

Van der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface: An approach to prepare high-quality thin films of topological insulator

Epitaxial Growth of Bi 2 Se 3 Topological Insulator Thin Films on Si ( 111 )

Interface Structure of A Topological Insulator/Superconductor Heterostructure

Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Coherent Heteroepitaxy of Bi2Se3 on GaAs (111)B

Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si

Stability Of The Bi2se3(111) Topological State: Electron-Phonon And Electron-Defect Scattering

Quintuple-layer epitaxy of high-quality Bi2Se3 thin films for topological insulator

Growth of Topological Insulator Bi2te3 Ultrathin Films on Si(111) Investigated by Low-Energy Electron Microscopy

Topological Limit of Ultrathin Quasi-Free-Standing Bi2te3 Films Grown on Si(111)

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Topological Surface State Evolution in Bi_2Se_3 Via Surface Etching

Topological Insulator Bi2Se3 Thin Films Grown on Double-Layer Graphene by Molecular Beam Epitaxy

Topological Surface State Evolution in Bi2Se3 via Surface Etching

Epitaxial growth of large-gap quantum spin Hall insulator on semiconductor surface

Quintuple-Layer Epitaxy Of Thin Films Of Topological Insulator Bi2se3

Molecular beam epitaxial growth of topological insulators.

Topological Surface State Evolution in Bi$_2$Se$_3$ via Surface Etching

Growth of quantum well films of topological insulator Bi2Se3 on insulating substrate