Abstract:Bi$_2$Se$_3$ is a widely studied 3D topological insulator having potential applications in optics, electronics, and spintronics. When the thickness of these films decrease to less than approximately 6 nm, the top and bottom surface states couple, resulting in the opening of a small gap at the Dirac point. In the 2D limit, Bi$_2$Se$_3$ may exhibit quantum spin Hall states. However, growing coalesced ultra-thin Bi$_2$Se$_3$ films with a controllable thickness and typical triangular domain morphology in the few nanometer range is challenging. Here, we explore the growth of Bi$_2$Se$_3$ films having thickness down to 4 nm on sapphire substrates using molecular beam epitaxy that were then characterized with Hall measurements, atomic force microscopy, and Raman imaging. We find that substrate pre-treatment -- growing and decomposing a few layers of \BiSe before the actual deposition -- is critical to obtaining a completely coalesced film. In addition, higher growth rates and lower substrate temperatures led to improvement in surface roughness, in contrast to what is observed for conventional epitaxy. Overall, coalesced ultra-thin Bi$_2$Se$_3$ films with lower surface roughness enables thickness-dependent studies across the transition from a 3D-topological insulator to one with gapped surface states in the 2D regime.

Epitaxial Growth of Bi 2 Se 3 Topological Insulator Thin Films on Si ( 111 )

Van der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface: An approach to prepare high-quality thin films of topological insulator

Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface

Quintuple-layer epitaxy of high-quality Bi2Se3 thin films for topological insulator

Epitaxial Growth of High Mobility Bi2Se3 Thin Films on CdS

Growth of Topological Insulator Bi2te3 Ultrathin Films on Si(111) Investigated by Low-Energy Electron Microscopy

Quintuple-Layer Epitaxy Of Thin Films Of Topological Insulator Bi2se3

Topological Insulator Bi2Se3 Thin Films Grown on Double-Layer Graphene by Molecular Beam Epitaxy

Growth and band alignment of Bi2Se3 topological insulator on H-terminated Si(111) van der Waals surface

Molecular beam epitaxial growth of topological insulators.

Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si

Growth of quantum well films of topological insulator Bi2Se3 on insulating substrate

Coherent Heteroepitaxy of Bi2Se3 on GaAs (111)B

Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit.

Molecular Beam Epitaxy of Bilayer Bi(111) Films on Topological Insulator Bi2te3: A Scanning Tunneling Microscopy Study

Growth of Ultrathin Bi$_2$Se$_3$ Films by Molecular Beam Epitaxy

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

2D Bi2Se3 van der Waals Epitaxy on Mica for Optoelectronics Applications

Interface Structure of A Topological Insulator/Superconductor Heterostructure

Topological Limit of Ultrathin Quasi-Free-standing Bi2Te3films Grown on Si(111)

Ordered Growth of Topological Insulator Bi2Se3 Thin Films on Dielectric Amorphous SiO2 by MBE