Abstract:Two-dimensional (2D) atomic-layered heterostructures stacked by van der Waals interactions recently introduced new research fields, which revealed novel phenomena and provided promising applications for electronic, optical, and optoelectronic devices. In this study, we report the van der Waals epitaxial growth of high-quality atomically thin Bi2Se3 on single crystalline hexagonal boron nitride (h-BN) by chemical vapor deposition. Although the in-plane lattice mismatch between Bi2Se3 and h-BN is approximately 65%, our transmission electron microscopy analysis revealed that Bi2Se3 single crystals epitaxially grew on h-BN with two commensurate states; that is, the (1̅21̅0) plane of Bi2Se3 was preferably parallel to the (1̅100) or (1̅21̅0) plane of h-BN. In the case of the Bi2Se3 (2̅110) ∥ h-BN (11̅00) state, the Moiré pattern wavelength in the Bi2Se3/h-BN superlattice can reach 5.47 nm. These naturally formed thin crystals facilitated the direct assembly of h-BN/Bi2Se3/h-BN sandwiched heterostructures without introducing any impurity at the interfaces for electronic property characterization. Our quantum capacitance (QC) measurements showed a compelling phenomenon of thickness-dependent topological phase transition, which was attributed to the coupling effects of two surface states from Dirac Fermions at/or above six quintuple layers (QLs) to gapped Dirac Fermions below six QLs. Moreover, in ultrathin Bi2Se3 (e.g., 3 QLs), we observed the midgap states induced by intrinsic defects at cryogenic temperatures. Our results demonstrated that QC measurements based on h-BN/Bi2Se3/h-BN sandwiched structures provided rich information regarding the density of states of Bi2Se3, such as quantum well states and Landau quantization. Our approach in fabricating h-BN/Bi2Se3/h-BN sandwiched device structures through the combination of bottom-up growth and top-down dry transferring techniques can be extended to other two-dimensional layered heterostructures.

Van der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface: An approach to prepare high-quality thin films of topological insulator

The van der Waals epitaxy of Bi2Se3 on the vicinal Si(111) surface: An approach for preparing high-quality thin films of a topological insulator

Epitaxial Growth of Bi 2 Se 3 Topological Insulator Thin Films on Si ( 111 )

Quintuple-layer epitaxy of high-quality Bi2Se3 thin films for topological insulator

Growth and band alignment of Bi2Se3 topological insulator on H-terminated Si(111) van der Waals surface

Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface

Growth characteristics of topological insulator Bi2Se3 films on different substrates

Molecular-beam Epitaxy of Topological Insulator Bi2Se3(111) and (221) Thin Films

Optimization of the growth of the van der Waals materials Bi2Se3 and (Bi0.5In0.5)2Se3 by molecular beam epitaxy

Quintuple-Layer Epitaxy Of Thin Films Of Topological Insulator Bi2se3

Molecular beam epitaxial growth of topological insulators.

Topological Insulator Bi2Se3 Thin Films Grown on Double-Layer Graphene by Molecular Beam Epitaxy

Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si

Van Der Waals Epitaxial Growth of Atomically Thin Bi2se3 and Thickness-Dependent Topological Phase Transition

Growth of Topological Insulator Bi2te3 Ultrathin Films on Si(111) Investigated by Low-Energy Electron Microscopy

2D Bi2Se3 van der Waals Epitaxy on Mica for Optoelectronics Applications

Epitaxial Growth of High Mobility Bi2Se3 Thin Films on CdS

Growth of quantum well films of topological insulator Bi2Se3 on insulating substrate

Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit.

Epitaxial Growth of Bi(110) and Bi2Se3thin Films on a Ferromagnetic Insulator Substrate of Cr2Ge2Te6.

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering