Abstract:The naturally existing chalcogenide Bi2Se3 is topologically nontrivial due to the band inversion caused by strong spin-orbit coupling inside the bulk of the material. The surface states are spin polarized, protected by the time-inversion symmetry, and thus robust to the scattering caused by non-magnetic defects. A high purity topological insulator thin film can be easily grown via molecular beam epitaxy (MBE) on various substrates to enable novel electronics, optics, and spintronics applications. However, the unique surface state properties have historically been limited by the film quality, which is evaluated by crystallinity, surface morphology, and transport data. Here we propose and investigate different MBE growth strategies to improve the quality of Bi2Se3 thin films grown by MBE. In addition, growths of topological trivial insulator (Bi0.5In0.5)2Se3 (BIS) are also investigated. BIS is often used as a buffer layer or separation layer for topological insulator heterostructures. Based on the surface passivation status, we have classified the substrates into two categories, self-passivated or unpassivated, and determine the optimal growth mechanisms on the representative sapphire and GaAs, respectively. Growth temperature is a crucial control parameter for the van der Waals epitaxy for both types of substrates. For Bi2Se3 on GaAs, the surface passivation status determines the dominant growth mechanism.

Growth characteristics of topological insulator Bi2Se3 films on different substrates

Molecular-beam Epitaxy of Topological Insulator Bi2Se3(111) and (221) Thin Films

Epitaxial Growth of Bi 2 Se 3 Topological Insulator Thin Films on Si ( 111 )

Van der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface: An approach to prepare high-quality thin films of topological insulator

Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface

Optimization of the growth of the van der Waals materials Bi2Se3 and (Bi0.5In0.5)2Se3 by molecular beam epitaxy

The van der Waals epitaxy of Bi2Se3 on the vicinal Si(111) surface: An approach for preparing high-quality thin films of a topological insulator

Growth and band alignment of Bi2Se3 topological insulator on H-terminated Si(111) van der Waals surface

Growth of quantum well films of topological insulator Bi2Se3 on insulating substrate

Quintuple-layer epitaxy of high-quality Bi2Se3 thin films for topological insulator

Molecular beam epitaxial growth of topological insulators.

Growth of Topological Insulator Bi2te3 Ultrathin Films on Si(111) Investigated by Low-Energy Electron Microscopy

Topological Insulator Bi2Se3 Thin Films Grown on Double-Layer Graphene by Molecular Beam Epitaxy

Quintuple-Layer Epitaxy Of Thin Films Of Topological Insulator Bi2se3

Single Domain Bi2Se3 Films Grown on InP(111)A by Molecular-Beam Epitaxy

Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction

Epitaxial Growth of Bi(110) and Bi2Se3thin Films on a Ferromagnetic Insulator Substrate of Cr2Ge2Te6.

Suspended Ga2se3 Film and Epitaxial Bi2se3(221) on Gasb(001) by Molecular-Beam Epitaxy

Structure and Morphology Controlled Growth of Bismuth Selenide Films with Tunable Transport Properties on H-Passivated Si(111) by Molecular Beam Epitaxy

Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si

Ordered Growth of Topological Insulator Bi2Se3 Thin Films on Dielectric Amorphous SiO2 by MBE