Abstract:AbstractUltrathin two‐dimensional transition‐metal dichalcogenides (TMDs) have been pursued extensively in recent years for interesting physics and application potentials. For the latter, it is essential to synthesize crystalline TMD monolayers at wafer‐scale. Here, we report growth of single‐crystalline MSe2 (M = Mo, W) monolayers at wafer‐scale by molecular‐beam epitaxy at low temperatures (200–400°C) on nominally flat Au(1 1 1) substrates. The epifilms have low intrinsic defect densities of low 1012 cm−2. The grown films have then been exfoliated and transferred onto SiO2/Si by a wet chemical process, on which some optical measurements are performed, revealing high spatial uniformity of the samples. We also establish that MSe2 grows on Au via the van der Waals epitaxy mechanism, where a continuous film extends across the whole surface, overhangs atomic‐layer steps on substrate. We identify that the growth of highly crystalline MSe2 is promoted by an enhanced interaction between Au substrate and MSe2 islands rather than by the guidance of surface steps on substrate. The latter only arrests MSe2 lateral growth if they are multilayer high.Key points MBE growth of wafer‐scale highly crystalline TMD monolayers at low‐temperature is achieved. Island‐substrate interaction is found to play a critical role in vdW epitaxy of single‐crystalline TMDs on on‐axis substates. The TMD monolayers are of high uniformity and low intrinsic defect density.

Epitaxial Growth of High Mobility Bi2Se3 Thin Films on CdS

Epitaxial Growth of Bi 2 Se 3 Topological Insulator Thin Films on Si ( 111 )

Growth of large-area 2D MoS₂(₁-x) Se₂x semiconductor alloys.

Wafer‐scale Single‐crystalline MoSe2 and WSe2 Monolayers Grown by Molecular‐beam Epitaxy at Low‐temperature — the Role of Island‐substrate Interaction and Surface Steps

Thickness and Growth-Condition Dependence of In-Situ Mobility and Carrier Density of Epitaxial Thin-Film Bi_2Se_3

2D Bi2Se3 van der Waals Epitaxy on Mica for Optoelectronics Applications

Van der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface: An approach to prepare high-quality thin films of topological insulator

Molecular Beam Epitaxy and Micro-Structural Characterizations for PbSe Single Crystal Films

Coherent Heteroepitaxy of Bi2Se3 on GaAs (111)B

Growth and Electro-Optical Characteristics of CdSe / GaAs Epilayers Prepared by Electron Beam Epitaxy

Quintuple-layer epitaxy of high-quality Bi2Se3 thin films for topological insulator

Quintuple-Layer Epitaxy Of Thin Films Of Topological Insulator Bi2se3

Epitaxial growth of AgCrSe2 thin films by molecular beam epitaxy

Topological Insulator Bi2Se3 Thin Films Grown on Double-Layer Graphene by Molecular Beam Epitaxy

Growth of Ultrathin Bi$_2$Se$_3$ Films by Molecular Beam Epitaxy

Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface

Scanning tunneling microscopy study of epitaxial growth of PbSe thin film on BaF2(111)

High Mobility Two-Dimensional Bismuth Oxyselenide Single Crystals with Large Grain Size Grown by Reverse-Flow Chemical Vapor Deposition

Growth and Characterization of Bi2Se3 Crystals by Chemical Vapor Transport

Growth and structural characterisation of Sr-doped Bi2Se3 thin films

Molecular Beam Epitaxy and Electronic Structure of Atomically Thin Oxyselenide Films.