Abstract:A mechanistic understanding of interactions be-tween atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., similar to 88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., similar to 12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, similar to 64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (similar to 36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (similar to 2.4 angstrom), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches similar to 3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.

Epitaxial growth of AgCrSe2 thin films by molecular beam epitaxy

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Controlled Growth of Atomically Thin In2se3 Flakes by Van Der Waals Epitaxy

Molecular Beam Epitaxy and Micro-Structural Characterizations for PbSe Single Crystal Films

Epitaxial Growth of High Mobility Bi2Se3 Thin Films on CdS

Epitaxial Growth of Large-Grain-size Ferromagnetic Monolayer CrI3 for Valley Zeeman Splitting Enhancement

Structure and bandgap evolution of chromium selenide epitaxially grown on Au(111): From CrSe2 to Cr2Se3

Epitaxial growth and magnetic characterization of EuSe thin films with various crystalline orientations

Molecular Beam Epitaxy Growth of Transition Metal Dichalcogenide (Mo,Mn)Se$_2$ on 2D, 3D and polycrystalline substrates

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Coherent Heteroepitaxy of Bi2Se3 on GaAs (111)B

Atomic-level structural and chemical analysis of Cr-doped Bi2Se3 thin films

Epitaxial growth of atomically thin Ga2Se2 films on c-plane sapphire substrates

Growth and Electro-Optical Characteristics of CdSe / GaAs Epilayers Prepared by Electron Beam Epitaxy

Epitaxial Growth of Bi 2 Se 3 Topological Insulator Thin Films on Si ( 111 )

Effect of Sr doping on structure, morphology and transport properties of Bi$_2$Se$_3$ epitaxial thin films

Molecular Beam Epitaxy of 2D-layered Gallium Selenide on GaN substrates

2D Bi2Se3 van der Waals Epitaxy on Mica for Optoelectronics Applications

Structural and Magnetic Properties of Molecular Beam Epitaxy Grown Chromium Selenide Thin Films

Controllable synthesis of Ag 2 Se binary thin-film via electrochemical atomic layer epitaxy (ECALE) and its characterization

Epitaxial Growth of Large-Area and Highly Crystalline Anisotropic ReSe 2 Atomic Layer