Epitaxial growth and magnetic characterization of EuSe thin films with various crystalline orientations

Ying Wang,Xinyu Liu,Seul-Ki Bac,Jacek K. Furdyna,Badih A. Assaf,Maksym Zhukovskyi,Tatyana Orlova,Neil R Dilley,Leonid P. Rokhinson

DOI: https://doi.org/10.1063/5.0075827

2021-06-18

Abstract:We report different growth modes and corresponding magnetic properties of thin EuSe films grown by molecular beam epitaxy on BaF2, Pb1-xEuxSe, GaAs, and Bi2Se3 substrates. We show that EuSe growth predominantly in (001) orientation on GaAs(111) and Bi2Se3, but along (111) crystallographic direction on BaF2 (111) and Pb1-xEuxSe (111). High-resolution transmission electron microscopy measurements reveal an abrupt and highly crystalline interface for both (001) and (111) EuSe films. In agreement with previous studies, ordered magnetic phases include antiferromagnetic, ferrimagnetic, and ferromagnetic phases. In contrast to previous studies, we found strong hysteresis for the antiferromagnetic-ferrimagnetic transition. An ability to grow epitaxial films of EuSe on Bi2Se3 and of Bi2Se3 on EuSe enables further investigation of interfacial exchange interactions between various phases of an insulating metamagnetic material and a topological insulator.

Materials Science,Quantum Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to explore the influence of different crystal orientations of EuSe thin films grown on different substrates on their structural and magnetic properties. Specifically, the researchers hope to understand the following points:

1. **The influence of different substrates on the growth mode of EuSe thin films**:
- The paper discusses the growth mode of EuSe thin films and their corresponding crystal orientations on different substrates such as BaF₂, Pb₁₋ₓEuₓSe, GaAs and Bi₂Se₃.
- It is found that on GaAs(111) and Bi₂Se₃ substrates, EuSe mainly grows along the (001) direction; while on BaF₂(111) and Pb₁₋ₓEuₓSe(111) substrates, EuSe grows along the (111) direction.

2. **The magnetic properties of EuSe thin films**:
- Through SQUID magnetometer measurement, the researchers constructed the magnetic phase diagrams of EuSe thin films with different orientations and compared them with those of bulk materials.
- It is found that the antiferromagnetic - ferrimagnetic (AFM - FiM) transition in EuSe thin films exhibits strong hysteresis, which is different from previous research results.
- For (001) - oriented EuSe thin films, the magnetization vector is not in the growth axis direction, but in the (111) plane.

3. **The possibility of interface exchange interaction**:
- The researchers point out that the ability to grow EuSe thin films on Bi₂Se₃ and Bi₂Se₃ on EuSe provides the possibility for further research on the interface exchange interaction between insulating metamagnetic materials and topological insulators.
- This interaction is of great significance for realizing the selective gap regulation of the surface states of topological insulators.

4. **Application prospects**:
- Controlling the crystal orientation and magnetic properties of EuSe thin films can provide new design ideas and experimental bases for future spintronics devices, the quantum anomalous Hall effect and other topological insulator - based devices.

In summary, this paper aims to reveal the potential application value of EuSe thin films by studying their growth modes and magnetic properties on different substrates, and to lay the foundation for further exploration of the interface effects between topological insulators and magnetic materials.