Scanning Tunneling Microscopy of Interface Properties of Bi2se3 on Fese

Yilin Wang,Yeping Jiang,Mu Chen,Zhi Li,Canli Song,Lili Wang,Ke He,Xi Chen,Xucun Ma,Qi-Kun Xue
DOI: https://doi.org/10.1088/0953-8984/24/47/475604
2012-01-01
Journal of Physics Condensed Matter
Abstract:We investigate the heteroepitaxial growth of Bi(2)Se(3) films on FeSe substrates by low-temperature scanning tunneling microscopy/spectroscopy. The growth of Bi(2)Se(3) on FeSe proceeds via van der Waals epitaxy with atomically flat morphology. A striped moiré pattern originating from the lattice mismatch between Bi(2)Se(3) and FeSe is observed. Tunneling spectra reveal the spatially inhomogeneous electronic structure of the Bi(2)Se(3) thin films, which can be ascribed to the charge transfer at the interface.
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