Tuning the band structure and superconductivity in single-layer FeSe by interface engineering

R. Peng,H. C. Xu,S. Y. Tan,H. Y. Cao,M. Xia,X. P. Shen,Z. C. Huang,C.H.P. Wen,Q. Song,T. Zhang,B. P. Xie,X. G. Gong,D. L. Feng
DOI: https://doi.org/10.1038/ncomms6044
IF: 16.6
2014-01-01
Nature Communications
Abstract:The interface between transition metal compounds provides a rich playground for emergent phenomena. Recently, significantly enhanced superconductivity has been reported for single-layer FeSe on Nb-doped SrTiO 3 substrate. Yet it remains mysterious how the interface affects the superconductivity. Here we use in situ angle-resolved photoemission spectroscopy to investigate various FeSe-based heterostructures grown by molecular beam epitaxy, and uncover that electronic correlations and superconducting gap-closing temperature ( T g ) are tuned by interfacial effects. T g up to 75 K is observed in extremely tensile-strained single-layer FeSe on Nb-doped BaTiO 3 , which sets a record high pairing temperature for both Fe-based superconductor and monolayer-thick films, providing a promising prospect on realizing more cost-effective superconducting device. Moreover, our results exclude the direct correlation between superconductivity and tensile strain or the energy of an interfacial phonon mode, and highlight the critical and non-trivial role of FeSe/oxide interface on the high T g , which provides new clues for understanding its origin.
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