Molecular Beam Epitaxy Growth of Transition Metal Dichalcogenide (Mo,Mn)Se$_2$ on 2D, 3D and polycrystalline substrates

Julia Kucharek,Rafał Bożek,Wojciech Pacuski

DOI: https://doi.org/10.1016/j.mssp.2023.107550

2023-09-14

Abstract:Magnetic doping of 2D materials such as Transition Metal Dichalcogenides is promising for the enhancement of magneto-optical properties, as it was previously observed for 3D diluted magnetic semiconductors. To maximize the effect of magnetic ions, they should be incorporated into the crystal lattice of 2D material rather than form separated precipitates. This work shows a study on incorporating magnetic manganese ions into the MoSe$_2$ monolayers using molecular beam epitaxy. We test growth on various substrates with very different properties: polycrystalline SiO$_2$ on Si, exfoliated 2D hexagonal Boron Nitride flakes (placed on SiO$_2$ / Si), monocrystalline sapphire, and exfoliated graphite (on tantalum foil). Although atomic force microscopy images indicate the presence of MnSe precipitates, but at the same time, various techniques reveal effects related to alloying MoSe$_2$ with Mn: Raman scattering and photoluminescence measurements show energy shift related to the presence of Mn, scanning transmission microscopy shows Mn induced partial transformation of 1H to 1T^\prime phase. Above effects evidence partial incorporation of Mn into the MoSe$_2$ layer.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to grow transition metal dichalcogenides (such as MoSe₂) on different types of substrates by molecular beam epitaxy (MBE) technology and dope manganese ions (Mn), in order to study how manganese ions affect the magnetic, optical and structural properties of these two - dimensional materials. Specifically, the paper focuses on the following aspects:

1. **Doping effect of manganese ions**: Study the doping situation of manganese ions in the MoSe₂ monolayer, especially whether manganese ions can be successfully incorporated into the lattice of MoSe₂ instead of forming independent MnSe nanocrystals.

2. **Influence of different substrates**: Explore the effect of growing (Mo,Mn)Se₂ monolayers on different substrates (such as polycrystalline SiO₂, single - crystal sapphire, exfoliated graphene and hexagonal boron nitride (hBN)), and analyze the influence of the substrate on the material properties.

3. **Optical and magnetic properties of materials**: Through techniques such as photoluminescence (PL), Raman scattering (Raman) and transmission measurement, study the influence of manganese doping on the MoSe₂ energy gap, exciton transition and magnetic properties.

4. **Phase transition phenomenon**: Use scanning tunneling microscopy (STM) to observe the influence of manganese doping on the crystal phase of MoSe₂, especially the formation of the 1T’ phase and its possible application prospects.

The core objective of the paper is to reveal the behavior and effect of manganese doping in MoSe₂ monolayers grown on different substrates through experimental and characterization means, and provide theoretical and experimental basis for realizing enhanced magneto - optical properties in two - dimensional materials and developing new spintronic devices in the future.