Selectable Growth and Electronic Structures of Monolayer 1t‐vse2 and V5Se8 Films on Bilayer Graphene

Qinghao Meng,Junyu Zong,Qichao Tian,Wang Chen,Xuedong Xie,Fan Yu,Xiaodong Qiu,Kaili Wang,Yongheng Zhang,Pengdong Wang,Fang-Sen Li,Can Wang,Yi Zhang
DOI: https://doi.org/10.1002/pssr.202100601
2022-01-01
Abstract:Intercalating magnetic atoms in 2D transition‐metal dichalcogenides (TMDCs) is a feasible route for fabricating 2D magnetic materials. As a 2D‐TMDC, the ground state of monolayer (ML) 1T‐VSe2 should be the charge‐density‐wave state rather than the ferromagnetic state. In this study, magnetism is induced in 1T‐VSe2 via the realization of selectable molecular beam epitaxial growth of both ML 1T‐VSe2 and ML V5Se8 films on a bilayer graphene substrate. The morphologies of the grown 1T‐VSe2 and V5Se8 films are characterized using scanning tunneling microscope, which showed differences in the heights of the domains. Subsequently, combining in situ X‐Ray photoemission spectroscopy measurements, it is determined that the grown V5Se8 film contained 26.7% more V atoms than the 1T‐VSe2 film, thereby confirming the chemical stoichiometry of the created samples. In addition, using in situ angle‐resolved photoemission spectroscopy measurements, the different electronic structures of the ML 1T‐VSe2 and ML V5Se8 films are studied. The results obtained indicate that the method applied is an effective way for realizing selective growth of 1T‐VSe2 or V5Se8 films, while providing significant information on their electronic structure differences, which can aid in investigating the magnetic properties of V5Se8.
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