Abstract:The outstanding optoelectronic and valleytronic properties of transition metal dichalcogenides (TMDs) have triggered intense research efforts by the scientific community. An alternative to induce long-range ferromagnetism (FM) in TMDs is by introducing magnetic dopants to form a dilute magnetic semiconductor. Enhancing ferromagnetism in these semiconductors not only represents a key step towards modern TMD-based spintronics, but also enables exploration of new and exciting dimensionality-driven magnetic phenomena. To this end, we show tunable ferromagnetism at room temperature and a thermally induced spin flip (TISF) in monolayers of V-doped WSe2. As vanadium concentrations increase within the WSe2 monolayers the saturation magnetization increases, and it is optimal at ~4at.% vanadium; the highest doping/alloying level ever achieved for V-doped WSe2 monolayers. The TISF occurs at ~175 K and becomes more pronounced upon increasing the temperature towards room temperature. We demonstrate that TISF can be manipulated by changing the vanadium concentration within the WSe2 monolayers. We attribute TISF to the magnetic field and temperature dependent flipping of the nearest W-site magnetic moments that are antiferromagnetically coupled to the V magnetic moments in the ground state. This is fully supported by a recent spin-polarized density functional theory calculation. Our findings pave the way for the development of novel spintronic and valleytronic nanodevices based on atomically thin magnetic semiconductors and stimulate further studies in this rapidly expanding research field of 2D magnetism.

Inducing itinerant ferromagnetism by manipulating van Hove singularity in epitaxial monolayer 1T-VSe2

Intrinsic 2D Ferromagnetism in V5Se8 Epitaxial Thin Films

Thickness-dependent and strain-tunable magnetism in two-dimensional van der Waals VSe2

Tunable Ferromagnetism and Thermally Induced Spin Flip in Vanadium-doped Tungsten Diselenide Monolayers at Room Temperature

Realizing Ferromagnetism in a Field‐Effect Transistor Based on VSe 2 Thin Flakes

Ferroelectricity and High Curie Temperature in a 2D Janus Magnet.

Magnetism and Its Structural Coupling Effects in 2D Ising Ferromagnetic Insulator VI<sub>3</sub>

Ferroelectricity in an Antiferromagnetic Vanadium Trichloride Monolayer

Exchange interactions in 1T-VSe2 monolayer and their modulation by electron doping via alkali metal adsorption and electride substrate

Exploitable magnetic anisotropy and half-metallicity controls in multiferroic van der Waals heterostructure

Epitaxial growth and electronic properties of an antiferromagnetic semiconducting VI2 monolayer

Intrinsic multiferroicity and magnetoelectric coupling in VSI2 monolayer

Giant Tunnel Magnetoresistance in In-Plane Magnetic Tunnel Junctions Based on the Heterointerface-Induced Half-Metallic 2H-VS2

Ferromagnetism in Vanadium-Doped Bi2se3 Topological Insulator Films

Modulation of Metal and Insulator States in 2D Ferromagnetic VS 2 by van der Waals Interaction Engineering.

Salt-Assisted Selective Growth of H-phase Monolayer VSe2 with Apparent Hole Transport Behavior

Large and tunable magnetoresistance in van der Waals Ferromagnet/Semiconductor junctions

Selectable Growth and Electronic Structures of Monolayer 1t‐vse2 and V5Se8 Films on Bilayer Graphene

High-Temperature Ferromagnetic Semiconductors: Janus Monolayer Vanadium Trihalides

Thickness-dependent Magnetotransport Properties in 1T VSe2 Single Crystals Prepared by Chemical Vapor Deposition

Spin-filter induced large magnetoresistance in 2D van der Waals magnetic tunnel junctions