Ferromagnetism induced by in-plane strain in a bulk VS 2 -based superlattice: (LiOH) 0.1 VS 2

Ruijin Sun,Jun Deng,Yuxin Ma,Munan Hao,Xu Chen,Dezhong Meng,Changchun Zhao,Shixuan Du,Shifeng Jin,Xiaolong Chen

DOI: https://doi.org/10.1039/d3cc01662e

IF: 4.9

2023-01-01

Chemical Communications

Abstract:(LiOH) 0.1 VS 2 provide a new approach to induce ferromagnetism in bulk TMD materials.

chemistry, multidisciplinary

What problem does this paper attempt to address?

Strain Engineering for 2D Ferroelectricity in Lead Chalcogenides

Tao Xu,Xiaoyuan Wang,Jiawei Mai,Jingtong Zhang,Jie Wang,Tong-Yi Zhang

DOI: https://doi.org/10.1002/aelm.201900932

IF: 6.2

2019-01-01

Advanced Electronic Materials

Abstract:The quest for new 2D ferroelectric materials continues to arouse interest. Based on first-principles calculations, here, 2D ferroelectric properties in lead chalcogenides PbXs (X = S, Se, and Te) with a thickness of two atomic layers via strain engineering is demonstrated. Although these materials are stable in a rocksalt-type cubic structure and are intrinsically nonferroelectric materials, an appropriate mechanical strain can readily activate a paraelectric to ferroelectric phase transition and induce in-plane electric polarization in these atomic layers. The induced polarization magnitude can be as large as 1.90 x 10(-10) C m(-1) at a biaxial strain of epsilon = 4.0%, which is comparable in magnitude to that of ultrathin ferroelectric SnTe. The Curie temperature T-c of the materials is also estimated using effective Hamiltonian simulations. The origin of the emerged ferroelectric phase is attributed to softening of the polar mode with applied strain. In addition, the band gaps of the crystals are found to be tunable with applied strain, which can be adjusted to the ideal value of 1.3 eV for photovoltaic applications. The results not only provide a new route to explore ferroelectricity in 2D materials but also suggest promising semiconducting ferroelectrics for solar applications.
Orbital-Ordering Driven Simultaneous Tunability of Magnetism and Electric Polarization in Strained Monolayer VCl3

Deping Guo,Cong Wang,Lvjin Wang,Yunhao Lu,Hua Wu,Yanning Zhang,Wei Ji

DOI: https://doi.org/10.1088/0256-307x/41/4/047501

2024-01-01

Chinese Physics Letters

Abstract:Two-dimensional (2D) van der Waals magnetic materials have promising and versatile electronic and magnetic properties in the 2D limit, indicating a considerable potential to advance spintronic applications. Theoretical predictions thus far have not ascertained whether monolayer VCl3 is a ferromagnetic (FM) or anti-FM monolayer; this also remains to be experimentally verified. We theoretically investigate the influence of potential factors, including C-3 symmetry breaking, orbital ordering, epitaxial strain, and charge doping, on the magnetic ground state. Utilizing first-principles calculations, we predict a collinear type-III FM ground state in monolayer VCl3 with a broken C-3 symmetry, wherein only the former two of three t(2g) orbitals (a(1g), e(g2)(pi) and e(g1)(pi)) are occupied. The atomic layer thickness and bond angles of monolayer VCl3 undergo abrupt changes driven by an orbital ordering switch, resulting in concomitant structural and magnetic phase transitions. Introducing doping to the underlying Cl atoms of monolayer VCl3 without C-3 symmetry simultaneously induces in- and out-of-plane polarizations. This can achieve a multiferroic phase transition if combined with the discovered adjustments of magnetic ground state and polarization magnitude under strain. The establishment of an orbital-ordering driven regulatory mechanism can facilitate deeper exploration and comprehension of magnetic properties of strongly correlated systems in monolayer VCl3.
Strain‐Induced Magnetism in MSi2N4 (M = V, Cr): A First‐Principles Study

Yingmei Li,Jing Wang,Guochun Yang,Yong Liu

DOI: https://doi.org/10.1002/andp.202100273

2021-01-01

Annalen der Physik

Abstract:The discovery of ferromagnetic 2D van der Waals (vdW) materials has opened up opportunities for exploring and harnessing magnetism in low-dimensional limit, and developing innovative paper-like spintronic devices. Stress engineering demonstrates unique advantages in regulating material properties, especially for 2D materials. With the aid of first-principles calculations, the effectiveness of strain engineering for modulating the electronic and magnetic properties of MSi2N4 (M = V, Cr) monolayers from a new family of layer-structured 2D vdW materials is explored. Their magnetic configurations are effectively tuned via the uniaxial and biaxial tensile strain of in-plane lattice vectors. VSi2N4 exhibits half-metallic ferromagnetic character, whereas CrSi2N4 is prone to be antiferromagnetic (AFM), which is rationalized from the competition between the direct metal-metal AFM interaction and the 90(0) ferromagnetic superexchange. More intriguingly, VSi2N4 demonstrates a high magnetic ordering temperature of 285 K, which is close to room temperature. The predicted appealing properties of VSi2N4 under strain await experimental confirmation.
Inducing itinerant ferromagnetism by manipulating van Hove singularity in epitaxial monolayer 1T-VSe2

Junyu Zong,Zhao-Yang Dong,Junwei Huang,Kaili Wang,Qi-Wei Wang,Qinghao Meng,Qichao Tian,Xiaodong Qiu,Yuyang Mu,Li Wang,Wei Ren,Xuedong Xie,Wang Chen,Yongheng Zhang,Can Wang,Fang-Sen Li,Shao-Chun Li,Jian-Xin Li,Hongtao Yuan,Yi Zhang

DOI: https://doi.org/10.1016/j.scib.2023.04.016

IF: 18.9

2023-04-01

Science Bulletin

Abstract:The itinerant ferromagnetism can be induced by a van Hove singularity (VHS) with a divergent density of states at Fermi level. Utilizing the giant magnified dielectric constant εr of SrTiO3(111) substrate with cooling, here we successfully manipulated the VHS in the epitaxial monolayer (ML) 1T-VSe2 film approaching to Fermi level via the large interfacial charge transfer, and thus induced a two-dimensional (2D) itinerant ferromagnetic state below 3.3 K. Combining the direct characterization of the VHS structure via angle-resolved photoemission spectroscopy (ARPES), together with the theoretical analysis, we ascribe the manipulation of VHS to the physical origin of the itinerant ferromagnetic state in ML 1T-VSe2. Therefore, we further demonstrated that the ferromagnetic state in the 2D system can be controlled through manipulating the VHS by engineering the film thickness or replacing the substrate. Our findings clearly evidence that the VHS can serve as an effective manipulating degree of freedom for the itinerant ferromagnetic state, expanding the application potentials of 2D magnets for the next-generation information technology.

multidisciplinary sciences
Strain-induced ferromagnetism and magneto-electric coupling in two-dimensional ferroelectric ZnIn2S4

Dong Li,Yuehua Huangfu,Guangbiao Zhang,Chang Liu,Fengzhu Ren,Bing Wang

DOI: https://doi.org/10.1063/5.0188388

IF: 4

2024-05-06

Applied Physics Letters

Abstract:Two-dimensional (2D) multiferroic materials are currently in high demand due to their significant potential for applications in the field of high-density data storage devices. However, due to the different requirements for generating ferroelectricity and magnetism, 2D multiferroic materials are rare. In this study, we propose that applying strain can induce magnetism in 2D ferroelectric materials with special electronic structures, thereby creating 2D multiferroics. Taking 2D ZnIn2S4 as an example, it shows robust ferroelectricity with an appropriate switching barrier (79.3 meV), and the out-of-plane ferroelectric polarization is 0.0322 C/m2. Applying biaxial tensile strain can change the energy of the flatband near the Fermi level, ultimately resulting in self-doping phenomena and leading to Stoner-type itinerant ferromagnetism. The reversal of ferroelectric polarization in ZnIn2S4 bilayer and ZnIn2S4–In2Se3 heterostructure can manipulate the magnetic moment of the system, exhibiting significant magnetoelectric coupling phenomena. Our findings provide a pathway for designing 2D ferromagnetic and multiferroic materials.

physics, applied
A density functional theory study of the tunable structure, magnetism and metal-insulator phase transition in VS2 monolayers induced by in-plane biaxial strain

Min Kan,Bo Wang,Young Hee Lee,Qiang Sun

DOI: https://doi.org/10.1007/s12274-014-0626-5

IF: 9.9

2014-12-01

Nano Research

Abstract:We report a density functional theory study of a phase transition of a VS2 monolayer that can be tuned by the in-plane biaxial strain. This results in both a metal-insulator transition and a low spin-high spin magnetic transition. At low temperature, the semiconducting H-phase is stable and large strain (>3%) is required to provoke the transition. On the other hand, at room temperature (300 K), only a small tensile strain of 2% is needed to induce the phase transition from the semiconducting H-phase to the metallic T-phase together with the magnetic transition from high spin to low spin. The phase diagram dependence on both strain and temperature is also discussed in order to provide a better understanding of the phase stability of VS2 monolayers.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Strain Engineering of Intrinsic Ferromagnetism in 2D van der Waals Materials

Hongtao Ren,Gang Xiang

DOI: https://doi.org/10.3390/nano13162378

IF: 5.3

2023-08-19

Nanomaterials

Abstract:Since the discovery of the low-temperature, long-range ferromagnetic order in monolayers Cr2Ge2Te6 and CrI3, many efforts have been made to achieve a room temperature (RT) ferromagnet. The outstanding deformation ability of two-dimensional (2D) materials provides an exciting way to mediate their intrinsic ferromagnetism (FM) with strain engineering. Here, we summarize the recent progress of strain engineering of intrinsic FM in 2D van der Waals materials. First, we introduce how to explain the strain-mediated intrinsic FM on Cr-based and Fe-based 2D van der Waals materials through ab initio Density functional theory (DFT), and how to calculate magnetic anisotropy energy (MAE) and Curie temperature (TC) from the interlayer exchange coupling J. Subsequently, we focus on numerous attempts to apply strain to 2D materials in experiments, including wrinkle-induced strain, flexible substrate bending or stretching, lattice mismatch, electrostatic force and field-cooling. Last, we emphasize that this field is still in early stages, and there are many challenges that need to be overcome. More importantly, strengthening the guideline of strain-mediated FM in 2D van der Waals materials will promote the development of spintronics and straintronics.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Modulation of Metal and Insulator States in 2D Ferromagnetic VS 2 by van der Waals Interaction Engineering.

Yuqiao Guo,Haitao Deng,Xu Sun,Xiuling Li,Jiyin Zhao,Junchi Wu,Wangsheng Chu,Sijia Zhang,Haibin Pan,Xusheng Zheng,Xiaojun Wu,Changqing Jin,Changzheng Wu,Yi Xie

DOI: https://doi.org/10.1002/adma.201700715

IF: 29.4

2017-01-01

Advanced Materials

Abstract:2D transition-metal dichalcogenides (TMDCs) are currently the key to the development of nanoelectronics. However, TMDCs are predominantly nonmagnetic, greatly hindering the advancement of their spintronic applications. Here, an experimental realization of intrinsic magnetic ordering in a pristine TMDC lattice is reported, bringing a new class of ferromagnetic semiconductors among TMDCs. Through van der Waals (vdW) interaction engineering of 2D vanadium disulfide (VS2), dual regulation of spin properties and bandgap brings about intrinsic ferromagnetism along with a small bandgap, unravelling the decisive role of vdW gaps in determining the electronic states in 2D VS2. An overall control of the electronic states of VS2 is also demonstrated: bond-enlarging triggering a metal-to-semiconductor electronic transition and bond-compression inducing metallization in 2D VS2. The pristine VS2 lattice thus provides a new platform for precise manipulation of both charge and spin degrees of freedom in 2D TMDCs availing spintronic applications.
Theoretical Investigation of the Ferromagnetism on VS(2 )monolayers with Exchange Anisotropy

Ning-Ning Sun,Huai-Yu Wang

DOI: https://doi.org/10.1016/j.jmmm.2019.01.065

IF: 3.097

2019-01-01

Journal of Magnetism and Magnetic Materials

Abstract:The ferromagnetism of VS2 monolayers are studied by the extended Heisenberg J(1)-J(2) model with exchange anisotropy, inter-monolayer coupling J(3) and external magnetic field. With appropriate anisotropy strength and inter-monolayer coupling strength, the Curie point of monolayers can reach room temperature, which is consistent with experiments. The coercivity in our results are compared with the values in experiments at different temperatures. The coercivity for L = 3-5 monolayers are close to the experimental result at T = 50 K, but at T = 300 K the coercivity for L = 4-5 monolayers need larger anisotropy strength. Both the Curie point and coercivity are sensitive to the anisotropy strength and inter-monolayer coupling strength. The reasonable interaction strength between magnetic V-atoms, the exchange anisotropy and the inter-monolayer coupling strength are discussed by comparing our results with experiments. The small exchange anisotropy and large inter-monolayer exchange coupling for L > 1 monolayers may implies that the 1T-VS2 is more stable for monolayers while the 2H-VS2 is more stable for one monolayer near room temperature.
Molecule-Confined Engineering Toward Superconductivity and Ferromagnetism in Two-Dimensional Superlattice

Zejun Li,Yingcheng Zhao,Kejun Mu,Huan Shan,Yuqiao Guo,Jiajing Wu,Yueqi Su,Qiran Wu,Zhe Sun,Aidi Zhao,Xuefeng Cui,Changzheng Wu,Yi Xie

DOI: https://doi.org/10.1021/jacs.7b10071

IF: 15

2017-01-01

Journal of the American Chemical Society

Abstract:Superconductivity is mutually exclusive with ferromagnetism, because the ferromagnetic exchange field is often destructive to superconducting pairing correlation. Well-designed chemical and physical methods have been devoted to realize their coexistence only by structural integrity of inherent superconducting and ferromagnetic ingredients. However, such coexistence in freestanding structure with nonsuperconducting and nonferromagnetic components still remains a great challenge up to now. Here, we demonstrate a molecule-confined engineering in two-dimensional organic-inorganic superlattice using a chemical building-block approach, successfully realizing first freestanding coexistence of superconductivity and ferromagnetism originated from electronic interactions of nonsuperconducting and nonferromagnetic building blocks. We unravel totally different electronic behavior of molecules depending on spatial confinement: flatly lying Co(Cp)2 molecules in strongly confined SnSe2 interlayers weaken the coordination field, leading to spin transition to form ferromagnetism; meanwhile, electron transfer from cyclopentadienyls to the Se-Sn-Se lattice induces superconducting state. This entirely new class of coexisting superconductivity and ferromagnetism generates a unique correlated state of Kondo effect between the molecular ferromagnetic layers and inorganic superconducting layers. We anticipate that confined molecular chemistry provides a newly powerful tool to trigger exotic chemical and physical properties in two-dimensional matrixes.
Structural dimerization and charge-orbital ordering in a ferromagnetic semiconductor LiV2S4 monolayer

Rui Song,Bili Wang,Kai Feng,Jia Yao,Mengjie Lu,Jing Bai,Shuai Dong,Ming An

DOI: https://doi.org/10.1039/D3CP04560A

2023-12-16

Abstract:With the rise of two-dimensional (2D) materials, unique properties that are completely distinct from bulk counterparts continue to emerge at low-dimensional scales, presenting numerous opportunities and challenges. It also provides a new perspective for the study of transition metal system. Here, based on density functional theory (DFT), the physical properties of 2D monolayer LiV2S4 have been studied. Remarkable changes have been observed, i.e., vanadium dimerization, ferromagnetism, charge distribution and metal-insulator transition (MIT). It is argued that the electronic instability leads to the V dimerization which further lifts the degeneracy of charge distribution and stabilizes the charge and spin ordering state.

Materials Science
Two-dimensional ferroelasticity in van der Waals β’-In2Se3

Chao Xu,Jianfeng Mao,Xuyun Guo,Shanru Yan,Yancong Chen,Tsz Wing Lo,Changsheng Chen,Dangyuan Lei,Xin Luo,Jianhua Hao,Changxi Zheng,Ye Zhu

DOI: https://doi.org/10.1038/s41467-021-23882-7

IF: 16.6

2021-06-16

Nature Communications

Abstract:Abstract Two-dimensional (2D) materials exhibit remarkable mechanical properties, enabling their applications as flexible and stretchable ultrathin devices. As the origin of several extraordinary mechanical behaviors, ferroelasticity has also been predicted theoretically in 2D materials, but so far lacks experimental validation and investigation. Here, we present the experimental demonstration of 2D ferroelasticity in both exfoliated and chemical-vapor-deposited β’ -In 2 Se 3 down to few-layer thickness. We identify quantitatively 2D spontaneous strain originating from in-plane antiferroelectric distortion, using both atomic-resolution electron microscopy and in situ X-ray diffraction. The symmetry-equivalent strain orientations give rise to three domain variants separated by 60° and 120° domain walls (DWs). Mechanical switching between these ferroelastic domains is achieved under ≤0.5% external strain, demonstrating the feasibility to tailor the antiferroelectric polar structure as well as DW patterns through mechanical stimuli. The detailed domain switching mechanism through both DW propagation and domain nucleation is unraveled, and the effects of 3D stacking on such 2D ferroelasticity are also discussed. The observed 2D ferroelasticity here should be widely available in 2D materials with anisotropic lattice distortion, including the 1T’ transition metal dichalcogenides with Peierls distortion and 2D ferroelectrics such as the SnTe family, rendering tantalizing potential to tune 2D functionalities through strain or DW engineering.

multidisciplinary sciences
Ferromagnetism and Matrix-Dependent Charge Transfer in Strained LaMnO3–LaCoO3 Superlattices

Liang Wu,Mingfeng Chen,Changjian Li,Jun Zhou,Lei Shen,Yujia Wang,Zhicheng Zhong,Ming Feng,Yujun Zhang,Kun Han,T. Venky Venkatesan,Stephen J. Pennycook,Pu Yu,Jing Ma,X. Renshaw Wang,Ce-Wen Ma

DOI: https://doi.org/10.1080/21663831.2018.1482840

2018-01-01

Materials Research Letters

Abstract:Interfacial magnetism at transition-metal oxide interfaces is of tremendous interest. The emergence of ferromagnetism and a matrix-dependent charge transfer between Co and Mn ions in the interdiffusion region of compressively strained LaMnO3–LaCoO3 superlattices (SLs) were studied. The SLs exhibit considerable ferromagnetism, which is negligible in both constituents. This is explained by the matrix-dependent charge transfer between Co and Mn ions. That is, the valence state of diffused Co ions into LaMnO3 shifts from 3+ to 2+ by adopting one electron from Mn3+, inducing the same amount of Mn4+, while the Mn ions that diffuses into LaCoO3 remains Mn3+.
Strain-Engineered Ferroelectricity in 2H Bilayer MoS 2

Jianfeng Mao,Jingyu He,Weng Fu Io,Feng Guo,Zehan Wu,Ming Yang,Jianhua Hao

DOI: https://doi.org/10.1021/acsnano.4c07397

IF: 17.1

2024-10-25

ACS Nano

Abstract:The exploration of two-dimensional (2D) materials exhibiting out-of-plane ferroelectric and piezoelectric properties through interlayer twist/translation or strain, known as sliding ferroelectricity, has become a focal point in the quest for low-power electronic devices, capitalizing on weak van der Waals interactions. Herein, we delve into the behavior of strained bilayer molybdenum disulfide (2L-MoS(2)) transferred onto a nanocone-patterned substrate. An intriguing observation is the emergence...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Strain-induced valley polarization, topological states, and piezomagnetism in two-dimensional altermagnetic V$_2$Te$_2$O, V$_2$STeO, V$_2$SSeO, and V$_2$S$_2$O

Jin-Yang Li,An-Dong Fan,Yong-Kun Wang,Ying Zhang,Si Li

DOI: https://doi.org/10.1063/5.0242426

2024-11-29

Abstract:Altermagnets (AM) are a recently discovered third class of collinear magnets, and have been attracting significant interest in the field of condensed matter physics. Here, based on first-principles calculations and theoretical analysis, we propose four two-dimensional (2D) magnetic materials--monolayer V$_2$Te$_2$O, V$_2$STeO, V$_2$SSeO, and V$_2$S$_2$O--as candidates for altermagnetic materials. We show that these materials are semiconductors with spin-splitting in their nonrelativistic band structures. Furthermore, in the band structure, there are a pair of Dirac-type valleys located at the time-reversal invariant momenta (TRIM) X and Y points. These two valleys are connected by crystal symmetry instead of time-reversal symmetry. We investigate the strain effect on the band structure and find that uniaxial strain can induce valley polarization, topological states in these monolayer materials. Moreover, piezomagnetism can be realized upon finite doping. Our result reveals interesting valley physics in monolayer V$_2$Te$_2$O, V$_2$STeO, V$_2$SSeO, and V$_2$S$_2$O, suggesting their great potential for valleytronics, spintronics, and multifunctional nanoelectronics applications.

Materials Science,Mesoscale and Nanoscale Physics
Thickness-dependent and strain-tunable magnetism in two-dimensional van der Waals VSe2

Wenjuan Ci,Huali Yang,Wuhong Xue,Ruilong Yang,Baohua Lv,Peng Wang,Run-Wei Li,Xiao-Hong Xu

DOI: https://doi.org/10.1007/s12274-022-4400-9

IF: 9.9

2022-05-12

Nano Research

Abstract:Two-dimensional (2D) van der Waals (vdW) magnetic materials with reduced dimensionality often exhibit unexpected properties compared to their bulk counterparts. In particular, the mechanical flexibility of 2D structure, enhanced ferromagnetism at reduced layer thickness, as well as robust perpendicular magnetic anisotropy are quite appealing for constructing novel spintronic devices. The vdW vanadium diselenide (VSe 2 ) is an attractive material whose bulk is paramagnetic while monolayer is ferromagnetic with a Curie temperature ( T c ) above room temperature. To explore its possible device applications, a detailed investigation on the thickness-dependent magnetism and strain modulation behavior of VSe 2 is highly demanded. In this article, the VSe 2 nanoflakes were controllably prepared via chemical vapor deposition (CVD) method. The few-layer single VSe 2 nanoflakes were found to exhibit magnetic domain structures at room temperature. Ambient magnetic force microscopy (MFM) phase images reveal a clear thickness-dependent magnetism and the MFM phase contrast is traceable for the nanoflakes of layer thickness below ∼ 6 nm. Moreover, applying strain is found efficient in modulating the magnetic moment and coercive field of 2D VSe 2 at room temperature. These results are helpful for understanding the ferromagnetism of high temperature 2D magnets and for constructing novel straintronic devices or flexible spintronic devices.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Strain‐Modulated Ferromagnetism at an Intrinsic van der Waals Heterojunction

Ryuji Fujita,Gautam Gurung,Mohamad‐Assaad Mawass,Alevtina Smekhova,Florian Kronast,Alexander Kang‐Jun Toh,Anjan Soumyanarayanan,Pin Ho,Angadjit Singh,Emily Heppell,Dirk Backes,Francesco Maccherozzi,Kenji Watanabe,Takashi Taniguchi,Daniel A. Mayoh,Geetha Balakrishnan,Gerrit van der Laan,Thorsten Hesjedal

DOI: https://doi.org/10.1002/adfm.202400552

IF: 19

2024-03-15

Advanced Functional Materials

Abstract:This study focuses on the captivating interplay between the ferromagnetic Fe3GeTe2 and the piezoelectric α‐In2Se3, both 2D van der Waals (vdW) materials. Strained heterojunctions exhibit several compelling transformations: increased domain density, reduced Curie temperature, and emergent magnetostrictive ferromagnetic domains. Using α‐In2Se3 is a versatile approach to strain‐tune vdW materials, including graphite and Te based vdW chalcogenides. The van der Waals interaction enables atomically thin layers of exfoliated 2D materials to be interfaced in heterostructures with relaxed epitaxy conditions, however, the ability to exfoliate and freely stack layers without any strain or structural modification is by no means ubiquitous. In this work, the piezoelectricity of the exfoliated van der Waals piezoelectric α‐In2Se3 is utilized to modify the magnetic properties of exfoliated Fe3GeTe2, a van der Waals ferromagnet, resulting in increased domain wall density, reductions in the transition temperature ranging from 5 to 20 K, and an increase in the magnetic coercivity. Structural modifications at the atomic level are corroborated by a comparison to a graphite/α‐In2Se3 heterostructure, for which a decrease in the Tuinstra‐Koenig ratio is found. Magnetostrictive ferromagnetic domains are also observed, which may contribute to the enhanced magnetic coercivity. Density functional theory calculations and atomistic spin dynamic simulations show that the Fe3GeTe2 layer is compressively strained by 0.4%, reducing the exchange stiffness and magnetic anisotropy. The incorporation of α‐In2Se3 may be a general strategy to electrostatically strain interfaces within the paradigm of hexagonal boron nitride‐encapsulated heterostructures, for which the atomic flatness is both an intrinsic property and paramount requirement for 2D van der Waals heterojunctions.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Effect of Strain on Voltage-Controlled Magnetism in BiFeO3-based Heterostructures

J. J. Wang,J. M. Hu,T. N. Yang,M. Feng,J. X. Zhang,L. Q. Chen,C. W. Nan

DOI: https://doi.org/10.1038/srep04553

IF: 4.6

2014-01-01

Scientific Reports

Abstract:Voltage-modulated magnetism in magnetic/BiFeO3 heterostructures can be driven by a combination of the intrinsic ferroelectric-antiferromagnetic coupling in BiFeO3 and the antiferromagnetic-ferromagnetic exchange interaction across the heterointerface. However, ferroelectric BiFeO3 film is also ferroelastic, thus it is possible to generate voltage-induced strain in BiFeO3 that could be applied onto the magnetic layer across the heterointerface and modulate magnetism through magnetoelastic coupling. Here, we investigated, using phase-field simulations, the role of strain in voltage-controlled magnetism for these BiFeO3-based heterostructures. It is predicted, under certain condition, coexistence of strain and exchange interaction will result in a pure voltage-driven 180° magnetization reversal in BiFeO3-based heterostructures.
Intrinsic Magnetism and Biaxial Strain Tuning in Two-Dimensional Metal Halides V3X8 (X = F, Cl, Br, I) from First Principles and Monte Carlo Simulation

Haibo Xiao,Xiaonan Wang,Ruilong Wang,Lingfang Xu,Shiheng Liang,Changping Yang

DOI: https://doi.org/10.1039/c9cp00850k

2019-01-01

Abstract:A novel family of two-dimensional (2D) crystalline metal superhalogens V3X8 (X = F, Cl, Br, I) with intrinsic magnetism was predicted using first-principles calculations in the framework of density functional theory (DFT). The calculation results show that the V3Cl8 monolayer is an intrinsic anti-ferromagnetic semiconductor (AFS) with an indirect bandgap of 0.086 eV at the PBE functional level, while the V3X8 (X = F, Br, I) monolayer exhibits a fascinating ferromagnetic half-metal (FH) property with 100% spin-polarization at the Fermi level. Such 2D materials possess robust dynamical stability as well as thermal stability at room temperature except for V3Br8. In addition, Monte Carlo simulations based on the Ising model with the classical Heisenberg model estimate a Curie temperature of approximately 77 K and 103 K for the V3F8 and V3I8 systems, respectively. Furthermore, we predict an extraordinary phenomenon induced by biaxial compressive strain from the ferromagnetic half-metal (FH) to the ferromagnetic semiconductor (FS) at 2% strain and then to the antiferromagnetic metal (AM) with the biaxial strain increasing up to about 6.3% in the 2D V3I8 monolayer. In the case of 2D V3F8, as the strain varies from -10% to 8%, a series of electronic and magnetic phase transitions of AFS-AM-FH-AFS will occur. These tunable magnetic and electronic properties of 2D halides originate from the competition between AFM direct nearest-neighbor d-d exchange and FM superexchange via halogen p states, which leads to a variety of magnetic states. The explored controllable magnetic properties, electronic properties and the high Curie temperature render the 2D V3I8 monolayer a promising candidate for applications in magnetic logic devices and strain sensor devices.
Strain-driven Lattice Distortion and the Resultant Magnetic Properties of La0.7Sr0.3MnO3/BaTiO3 Superlattices

Liming Chen,Chunchen Zhang,Yequan Chen,Yongda Chen,Wei Niu,Peng Wang,Jun Du,Yongbing Xu,Rong Zhang,Xuefeng Wang

DOI: https://doi.org/10.1063/1.5119736

IF: 4

2019-01-01

Applied Physics Letters

Abstract:We report on the artificial manipulation of interfacial magnetism in the superlattices (SLs) of ([La0.7Sr0.3MnO3](30)/[BaTiO3](25))(n) (1 <= n <= 10) fabricated by pulsed laser deposition. The thicker 30 uc-La0.7Sr0.3MnO3 and 25 uc-BaTiO3 layers are designed as a single period of SLs in order to eliminate the interaction between two adjacent interfaces that could contribute to a polar phase transition and the corresponding magnetism. We use aberration-corrected scanning transmission electron microscopy and electron energy-loss spectroscopy to demonstrate that epitaxial-strain-driven lattice distortion renders the emergence of divalent Mn at the La0.7Sr0.3MnO3/BaTiO3 interfaces. The saturated magnetization decreases and the magnetic easy axis becomes more in-plane inclined as the interfacial strain of the SLs increases. Published under license by AIP Publishing.

Ferromagnetism induced by in-plane strain in a bulk VS 2 -based superlattice: (LiOH) 0.1 VS 2

Strain Engineering for 2D Ferroelectricity in Lead Chalcogenides

Orbital-Ordering Driven Simultaneous Tunability of Magnetism and Electric Polarization in Strained Monolayer VCl3

Strain‐Induced Magnetism in MSi2N4 (M = V, Cr): A First‐Principles Study

Inducing itinerant ferromagnetism by manipulating van Hove singularity in epitaxial monolayer 1T-VSe2

Strain-induced ferromagnetism and magneto-electric coupling in two-dimensional ferroelectric ZnIn2S4

A density functional theory study of the tunable structure, magnetism and metal-insulator phase transition in VS2 monolayers induced by in-plane biaxial strain

Strain Engineering of Intrinsic Ferromagnetism in 2D van der Waals Materials

Modulation of Metal and Insulator States in 2D Ferromagnetic VS 2 by van der Waals Interaction Engineering.

Theoretical Investigation of the Ferromagnetism on VS(2 )monolayers with Exchange Anisotropy

Molecule-Confined Engineering Toward Superconductivity and Ferromagnetism in Two-Dimensional Superlattice

Structural dimerization and charge-orbital ordering in a ferromagnetic semiconductor LiV2S4 monolayer

Two-dimensional ferroelasticity in van der Waals β’-In2Se3

Ferromagnetism and Matrix-Dependent Charge Transfer in Strained LaMnO3–LaCoO3 Superlattices

Strain-Engineered Ferroelectricity in 2H Bilayer MoS 2

Strain-induced valley polarization, topological states, and piezomagnetism in two-dimensional altermagnetic V$_2$Te$_2$O, V$_2$STeO, V$_2$SSeO, and V$_2$S$_2$O

Thickness-dependent and strain-tunable magnetism in two-dimensional van der Waals VSe2

Strain‐Modulated Ferromagnetism at an Intrinsic van der Waals Heterojunction

Effect of Strain on Voltage-Controlled Magnetism in BiFeO3-based Heterostructures

Intrinsic Magnetism and Biaxial Strain Tuning in Two-Dimensional Metal Halides V3X8 (X = F, Cl, Br, I) from First Principles and Monte Carlo Simulation

Strain-driven Lattice Distortion and the Resultant Magnetic Properties of La0.7Sr0.3MnO3/BaTiO3 Superlattices