Abstract:Two-dimensional (2D) semiconducting transition metal dichalcogenides can be used to make highperformance electronic, spintronic, and optoelectronic devices. Recently, room-temperature ferromagnetism and semiconduction in 2D VSe2 nanoflakes were attributed to the stable 2H-phase of VSe2 in the 2D limit. Here, our first-principles investigation shows that a metastable semiconducting H' phase can be formed from the H VSe2 monolayer through uniaxial stress or uniaxial strain. The calculated phonon spectra indicate the dynamical stability of the metastable H' VSe2 and the path of phase switching between the H and H' VSe2 phases is calculated. For the uniaxial stress (or strain) scheme, the H' phase can become lower in total energy than the H phase at a transition point. The H' phase has stronger ferromagnetism and its Currier temperature can be enhanced by applying uniaxial stress or strain. Applying uniaxial stress or strain can substantially change spin-resolved electronic structures, energy band edges, and effective carrier masses for both of the H and H' phases, and can cause some flat bands near the band edges in the strained H' phase. Further analysis indicates that one of the Se-Se bonds in the H' phase can be shortened by 19% and the related Se-V-Se bond angles are reduced by 23% with respect to those of the H phase, which is believed to increase the Se-Se covalence feature and reduce the valence of the nearby V atoms. Therefore, structural and bond reconstruction can be realized by applying uniaxial stress in such 2D ferromagnetic semiconductors for potential spintronic and optoelectronic applications.

A density functional theory study of the tunable structure, magnetism and metal-insulator phase transition in VS2 monolayers induced by in-plane biaxial strain

Structural Phase Transition of Multilayer VSe2.

Structural and Electronic Phase Transitions in Ferromagnetic Monolayer Vs2 Induced by Charge Doping

Orbital-Ordering Driven Simultaneous Tunability of Magnetism and Electric Polarization in Strained Monolayer VCl3

Strain-Induced Isostructural and Magnetic Phase Transitions in Monolayer MoN2

Electronic Phase Transformations and Energy Gap Variations in Uniaxial and Biaxial Strained Monolayer VS$_2$ TMDs: A Comprehensive DFT and Beyond-DFT Study

Strain-induced topological phase transition in ferromagnetic Janus monolayer MnSbBiS 2 Te 2

Room temperature Mott metal-insulator transition in V2O3 compounds induced via strain-engineering

Ferromagnetism induced by in-plane strain in a bulk VS 2 -based superlattice: (LiOH) 0.1 VS 2

Magnetic Phase Transition in strained two-dimensional semiconductor MoTeI Monolayer

Reversible strain-induced magnetic phase transition in a van der Waals magnet

Quantum Spin Hall Insulator Phase in Monolayer WTe2 by Uniaxial Strain

Suppression of Structural Phase Transition in VO 2 by Epitaxial Strain in Vicinity of Metal-insulator Transition

Anisotropic Metal-Insulator Transition in Strained VO2(B) Single Crystal

Tunable metal-insulator transition in strained thin films epitaxially grown on SiC substrates

Anisotropic metal-insulator transition in strained VO 2 (B) single crystal

In-plane strain-induced structural phase transition and interlayer antiferromagnetic skyrmions in 2H-VSe2 bilayer

Unveiling Magnetic Transition-Driven Thermal Conductivity Switching in Semiconducting Monolayer VS2

Strain induced magnetic hysteresis in MoS2 and WS2 monolayers with symmetric double sulfur vacancy defects

Stress-driven structural and bond reconstruction in 2D ferromagnetic semiconductor VSe2

Strain Tunable Magnetism in SnX2 (X = S, Se) Monolayers by Hole Doping