A method for quantitative determinations of nonhistone proteins in chromatin.

Johann Sonnenbichler,I. Zetl,Fausto Machicao

DOI: https://doi.org/10.1016/0003-2697(75)90406-6

IF: 2.9

1975-03-01

Analytical Biochemistry

Abstract:

What problem does this paper attempt to address?

Strain Induced Structural Phase Transition in TM6X6 (TM = Mo, W; X = S, Se, Te) Nanowires

Yi Peng,Xiaolin Wei,Chuanhong Jin,Yanning Zhang,Juexian Cao

DOI: https://doi.org/10.1016/j.jssc.2021.122194

IF: 3.3

2021-01-01

Journal of Solid State Chemistry

Abstract:The effect of axial strain on the structural phase transition and electronic properties of TM6X6 (TM = Mo, W; X = S, Se, Te) nanowires have been systematically investigated by first-principles calculations. It is interesting to see the structural phase transition from the stable alpha-TM6X6 into metastable beta-TM6X6 nanowires by external axial tensile strains, accompanied by the electronic feature transition from metal to semiconductor. Among them, other beta-TM6X6 nanowires exhibit direct bandgap semiconducting characteristics whereas the beta-TM6Te6 nanowires are indirect bandgap semiconductors. Our results have revealed the structural phase transition and metal-to-semiconductor transition induced by axial strain and suggested potential application of TM6X6 nanowires in future phase-controlled catalytic, electronic and optoelectronic devices.
Magnetic Phase Transition in strained two-dimensional semiconductor MoTeI Monolayer

Wanxue Li,Chunsheng Guo,Qing Zang,Rui Ding,Yong Zhao

DOI: https://doi.org/10.1016/j.apsusc.2020.147842

IF: 6.7

2021-01-01

Applied Surface Science

Abstract:<p>We find through density functional theory that the two-dimensional MoTeI monolayer is intrinsically a ferromagnetic semiconductor. The magnetic states of MoTeI monolayer are sensitive and can be significantly changed by biaxial strain. It is fully spin polarized and half-metallic intrinsically or with tensile strain, while becomes antiferromagnetic when over 0.4% compressive strain is applied. After the magnetic phase transition, the semiconducting characteristics are always maintained and little charge transfer is observed. We believe that the magnetic phase transition is attributed to the competition of the direct interaction and indirect superexchange interaction between magnetic centers of Mo atoms. These findings suggest that the MoTeI monolayer can be a potential candidate for spintronics applications.</p>

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Mechanical Behaviors of MoS Nanowires under Tension from Molecular Dynamics Simulations

Penghua Ying,Jin Zhang,Jianli Zhou,Qixin Liang,Zheng Zhong

DOI: https://doi.org/10.1016/j.commatsci.2020.109691

IF: 3.572

2020-01-01

Computational Materials Science

Abstract:As a new class of one-dimensional (1D) transition-metal monochalcogenides (TMMs) nanowires (NWs), the recently synthesized MoS NWs exhibit potential applications in two-dimensional integrated circuit. However, their mechanical behaviors remain almost unexplored. In this paper, the mechanical behaviors of MoS NWs under tensile loading are studied by classical molecular dynamics simulations together with first-principles calculations. A novel phase transformation is observed in the MoS NWs when the strain applied to them is larger than a critical value, which results in tension-induced hardening in their tensile modulus. Due to the existence of phase transformation, a complicated mechanical response is observed in MoS NWs during the entire loading process, which successively experiences the linear, plateau, stress hardening and fracture stages. The influence of various factors including the strain rate and temperature on the mechanical properties of MoS NWs such as phase transformation, Young's modulus, fracture strength and fracture strain are also examined. The mechanical properties of MoS NWs obtained in this paper will be beneficial to their future applications in the semiconducting field. It is also expected that the results of the tension-induced phase transformation and its influence on the material properties observed in the present MoS NWs can be further extended to other 1D TMMs such as MoTe and SnSe NWs, since these 1D TMMs are found to possess the similar structure.
Strain-induced Semiconductor to Metal Transition in MA2Z4 Bilayers (M = Ti, Cr, Mo; A = Si; Z = N, P)

Hongxia Zhong,Wenqi Xiong,Pengfei Lv,Jin Yu,Shengjun Yuan

DOI: https://doi.org/10.1103/physrevb.103.085124

IF: 3.7

2021-01-01

Physical Review B

Abstract:Very recently, a new type of two-dimensional layered material, MoSi2N4, was fabricated that is semiconducting with weak interlayer interaction, high strength, and excellent stability. We systematically investigate the effect of vertical strain on the electronic structure of MA(2)Z(4) (M = Ti/Cr/Mo, A = Si, Z = N/P) bilayers. Taking bilayer MoSi2N4 as an example, our first-principles calculations show that its indirect band gap decreases monotonically as the vertical compressive strain increases. Under a critical strain around 22%, it undergoes a transition from semiconductor to metal. We attribute this to the opposite energy shift of states in different layers, which originates from the built-in electric field induced by the asymmetric charge transfer between two inner sublayers near the interface. Similar semiconductor to metal transitions are observed in other strained MA(2)Z(4) bilayers, and the estimated critical pressures to realize such transitions are within the same order as semiconducting transition metal dichalcogenides. The semiconductor to metal transitions in the family of MA(2)Z(4) bilayers present interesting possibilities for strain-induced engineering of their electronic properties.
Structural phase transition and electronic properties of two-dimensional

Guitao Zhang,Qian Chen,Jinlan Wang,and Jinlan Wang

DOI: https://doi.org/10.1103/physrevb.109.184103

2024-05-02

Physical Review B - Condensed Matter and Materials Physics

Abstract:The response to strains is a crucial issue when applying two-dimensional (2D) materials in flexible electronic devices. Utilizing first-principles calculations based on density functional theory, we systematically studied the structural phase transition in niobium oxide diiodide (NbOI2) monolayer and the consequent changes in electronic and magnetic properties. The calculated Young's modulus of the monolayer NbOI2 is approximately 80Nm−1 , and the in-plane Poisson's ratio is less than 0.1. Under uniaxial strain, dissociation of Nb atom dimers occurs, leading to a magnetic phase transition from nonmagnetic to antiferromagnetic states. Moreover, the coupling pattern of magnetic moments exhibits significant anisotropy along different directions with temperature variations. The exchange couplings in two orthogonal crystal directions were analyzed and the Néel temperature was predicted using Monte Carlo simulations. Additionally, the strain also modulates the ferroelectric polarization and switching barriers. A clear physical picture was provided to explain the magnetic and electronic mechanisms in the 2D NbOI2 . This study shows the potential applications of such materials in future flexible microelectronic devices. https://doi.org/10.1103/PhysRevB.109.184103 ©2024 American Physical Society
Strain-induced topological phase transition in ferromagnetic Janus monolayer MnSbBiS 2 Te 2

Romakanta Bhattarai,Peter Minch,Yunfan Liang,Shengbai Zhang,Trevor David Rhone

DOI: https://doi.org/10.1039/d3cp05578g

IF: 3.3

2024-03-15

Physical Chemistry Chemical Physics

Abstract:We investigate a strain-induced topological phase transition in the ferromagnetic Janus monolayer MnSbBiS 2 Te 2 using first-principles calculations. The electronic, magnetic, and topological properties are studied under biaxial strain within the range of −8 to +8%. The ground state of monolayer MnSbBiS 2 Te 2 is metallic with an out-of-plane magnetic easy axis. A band gap is opened when a compressive strain between −4% and −7% is applied. We observe a topological phase transition at a biaxial strain of −5%, where the material becomes a Chern insulator exhibiting a quantum anomalous hall (QAH) effect. We find that biaxial strain and spin–orbit coupling (SOC) are responsible for the topological phase transition in MnSbBiS 2 Te 2 . In addition, we find that biaxial strain can alter the direction of the magnetic easy axis of MnSbBiS 2 Te 2 . The Curie temperature is calculated using the Heisenberg model and is found to be 24 K. This study could pave the way to the design of topological materials with potential applications in spintronics, quantum computing, and dissipationless electronics.

chemistry, physical,physics, atomic, molecular & chemical
Strain-dependent Magnon Transport in CoFe2O4/NiO/CoFe2O4 Junctions Induced by Bulk Acoustic Waves

Hanbing Ling,Yao Wu,Xu Ge,Zhao Ye,Tianwen Dong,Ling Miao,Wei Luo,Yue Zhang,Qiuyun Fu

DOI: https://doi.org/10.1063/5.0229840

IF: 2.877

2024-01-01

Journal of Applied Physics

Abstract:A magnon junction consisting of ferromagnetic/antiferromagnetic/ferromagnetic insulators can manipulate the transmission of magnon current through adjusting magnetic moment alignment, offering potential for ultra-low power magnon circuits. This study employs density functional theory calculations and atomic simulations to investigate the strain-dependent modulation of magnon current transport in CoFe2O4/NiO/CoFe2O4 junctions induced by bulk acoustic waves. Our results demonstrate that strain significantly alters the magnetic anisotropy energy of both NiO and CoFe2O4, with NiO favoring in-plane magnetic anisotropy under various strains and CoFe2O4 exhibiting a transition from in-plane to perpendicular magnetic anisotropy. Additionally, controlling the magnetic anisotropy energy of NiO and CoFe2O4 allows for the regulation of magnon current transmission, providing a novel approach to optimize magnonic device performance. These findings highlight the potential of strain as a tunable parameter in the design of advanced magnonic devices.
MoS2 Heterostructure with Tunable Phase Stability: Strain Induced Interlayer Covalent Bond Formation

Bin Ouyang,Shiyun Xiong,Zhi Yang,Yuhang Jing,Yongjie Wang

DOI: https://doi.org/10.48550/arXiv.1703.04155

2017-03-13

Abstract:Due to the distinguished properties offered by different structural phases of monolayer MoS2, phase engineering design are urgently required for achieving switchable structural phase. Strain engineering is widely accepted as a clean and flexible method, however, cannot be achieved in engineering monolayer MoS2 phase transition because the critical biaxial strain required (~15%) is much larger than measured elastic limit (~11%). In this study, employing density functional theoretical calculations, it has been found out that with the forming of heterostructure between MoS2 with buckled 2D materials such as silicence, germanene and stanene, only a small strain can trigger the phase transition. As being suggested by the constructed phase stability diagram, biaxial deformation as low as 3% in MoS2/silicene and MoS2/stanene sandwich structure, would be sufficient to induce the structural phase transition in MoS2 lattice. This strain falls well within experimental elastic limit, thus would be feasible to realize in experiment. The origin of such behavior can be understood as strain induced interlayer covalent bond formation, which finally make MoS2 lattice more sensitive to external strain. This theoretical work provides one realistic route for achieving flexible phase stabilities in experimental design.

Materials Science
Strain Mediated Transition Between Skyrmion and Antiskyrmion in Ferromagnetic Thin Films

Jiajun Sun,Shengbin Shi,Peng Han,Yu Wang,Yunhong Zhao,Bai-Xiang Xu,Jie Wang

DOI: https://doi.org/10.2139/ssrn.4674228

IF: 7.3

2024-01-01

International Journal of Mechanical Sciences

Abstract:Magnetic topological structures have attracted great attention due to their potential applications in memory and logic devices. Achieving the controllable transition between different magnetic topological structures is crucial for their application. Here, we develop a phase field model with strain-modulated Dzyaloshinskii-Moriya interaction (DMI) and predict the controllable transitions between skyrmion and antiskyrmion states in a ferromagnetic thin film through the application of different strains. It is found that the anisotropic DMI induced by anisotropic strains in the thin film plays an important role in the transitions between various magnetic structures, including skyrmion, antiskyrmion, single domain, and helical domain. Anisotropic DMI also has a significant impact on the chirality and deformation of magnetic topological structures, among which anisotropic DMI can cause anisotropic deformation of skyrmions and antiskyrmions. Furthermore, the formation mechanism of antiskyrmions is elucidated by decomposing the magnetization vectors into Bloch and Néel-type components based on the Lifshitz invariant. This work not only provides an insight into the dynamic behaviors of topological structures but also suggests a new method for controlling magnetic configurations through strain engineering.
Manipulating the electronic structure and physical properties in monolayer Mo2I3Br3 via strain and doping

Wenning Ren,Kuijuan Jin,Cheng Ma,Chen Ge,Erjia Guo,Can Wang,Xiulai Xu,Guozhen Yang,Ergia Guo

DOI: https://doi.org/10.1039/d2nr01002j

IF: 6.7

2022-06-02

Nanoscale

Abstract:Identifying new two-dimensional intrinsic ferromagnets with high transition temperatures is a key step of improving device performance. Here we used first-principles calculations to demonstrate that the monolayer Janus Mo 2 I 3 Br 3 is an intrinsic ferromagnetic bipolar semiconductor with a large out-of-plane spin orientation. The calculated phonon dispersion and ab initio molecular dynamic simulations indicate the stability dynamically and thermally. Furthermore, we investigated the effect of electrostatic doping or in-plane biaxial strain on the electronic structures and magnetic and optical properties of monolayer Mo 2 I 3 Br 3 . We find that the magnetic anisotropy energy and Curie temperature are enhanced more than 4 and 2 times with the hole doping compared with those in the pristine monolayer Mo 2 I 3 Br 3 , respectively. The calculated electronic structures show that the stable half-metallic states are formed by electron or hole doping due to the strong spin polarization of the electronic states around the Fermi level. Furthermore, the spin orientation in the metallic channel of the doped monolayer Mo 2 I 3 Br 3 can be flipped with the increase of electron doping concentration. In addition, the magnetic anisotropy energy and Curie temperature can also be effectively manipulated by in-plane biaxial strain. The spin polarization of the conduction band minimum can be reversed by the tensile strain of 3% for the monolayer Mo 2 I 3 Br 3 , transforming it into an indirect band gap semiconductor. Finally, the calculated large and tunable optical absorption coefficient indicates that monolayer Mo 2 I 3 Br 3 is a promising candidate for potential optoelectronic applications. Our results may open up more opportunities for few-layer van der Waals crystals in magnetic storage, spintronics, and optoelectronic devices.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Strain-tunable magnetic and magnonic states in Ni-dihalide monolayers

Ali Ghojavand,Maarten Soenen,Nafise Rezaei,Mojtaba Alaei,Cem Sevik,Milorad V. Milošević

2024-07-30

Abstract:Monolayer NiI$_2$ garners large research interest due to its multiferroic behavior stemming from the interplay between its non-collinear magnetic order and the spin-orbit coupling. This prompts an investigation into the stability of the magnetic order in NiI$_2$ and similar materials under external stimuli. In this work, we report the effect of biaxial and uniaxial strain on the magnetic ground state, the critical temperature, and the magnonic properties of the NiX$_2$ (X = I, Br, Cl) monolayers. For all three materials, we reveal intricate strain-dependent phase diagrams, including ferromagnetic, helimagnetic, and skyrmionic phases. Moreover, we discuss the necessity of considering the biquadratic exchange interaction in the latter analysis. We reveal that the biquadratic exchange significantly alters both the magnetic ground state and the critical temperature of the magnetic order, and we demonstrate that its importance becomes even more explicit when monolayer Ni-dihalides are strained. Finally, we calculate the magnonic dispersion for the predicted magnetic states, showing that the skyrmionic phase functions as a magnonic crystal, and demonstrate the presence of strain-tunable soft magnon modes at finite wavevectors in the helimagnetic phase.

Mesoscale and Nanoscale Physics,Materials Science
Manipulating the Electronic Structure and Physical Properties in Monolayer Mo2I3Br3via Strain and Doping

Wenning Ren,Kuijuan Jin,Cheng Ma,Chen Ge,Erjia Guo,Can Wang,Xiulai Xu,Guozhen Yang

DOI: https://doi.org/10.1039/d2nr01002j

IF: 6.7

2022-01-01

Nanoscale

Abstract:Identifying new two-dimensional intrinsic ferromagnets with high transition temperatures is a key step of improving device performance. Here we used first-principles calculations to demonstrate that the monolayer Janus Mo2I3Br3 is an intrinsic ferromagnetic bipolar semiconductor with a large out-of-plane spin orientation. The calculated phonon dispersion and ab initio molecular dynamic simulations indicate the stability dynamically and thermally. Furthermore, we investigated the effect of electrostatic doping or in-plane biaxial strain on the electronic structures and magnetic and optical properties of monolayer Mo2I3Br3. We find that the magnetic anisotropy energy and Curie temperature are enhanced more than 4 and 2 times with the hole doping compared with those in the pristine monolayer Mo2I3Br3, respectively. The calculated electronic structures show that the stable half-metallic states are formed by electron or hole doping due to the strong spin polarization of the electronic states around the Fermi level. Furthermore, the spin orientation in the metallic channel of the doped monolayer Mo2I3Br3 can be flipped with the increase of electron doping concentration. In addition, the magnetic anisotropy energy and Curie temperature can also be effectively manipulated by in-plane biaxial strain. The spin polarization of the conduction band minimum can be reversed by the tensile strain of 3% for the monolayer Mo2I3Br3, transforming it into an indirect band gap semiconductor. Finally, the calculated large and tunable optical absorption coefficient indicates that monolayer Mo2I3Br3 is a promising candidate for potential optoelectronic applications. Our results may open up more opportunities for few-layer van der Waals crystals in magnetic storage, spintronics, and optoelectronic devices.
Strain-induced Magnetic Transitions in Half-Fluorinated Single Layers of BN, GaN and Graphene.

Yandong Ma,Ying Dai,Meng Guo,Chengwang Niu,Lin Yu,Baibiao Huang

DOI: https://doi.org/10.1039/c1nr10167f

IF: 6.7

2011-01-01

Nanoscale

Abstract:Recently, extensive experimental and theoretical studies on single layers of BN, GaN and graphene have stimulated enormous interest in exploring the properties of these sheets by decorating their surfaces. In the present work we discuss half-fluorinated single layers of BN, GaN and graphene, in the context of intercoupling between strain and magnetic property. First-principles calculations reveal that the energy difference between ferromagnetic and antiferromagnetic couplings increases significantly with strain increasing for half-fluorinated BN, GaN and graphene sheets. More surprisingly, the half-fluorinated BN and GaN sheets exhibit intriguing magnetic transitions between ferromagnetism and antiferromagnetism by applying strain, even giving rise to half-metal when the sheets are under compression of 6%. It is found that the magnetic coupling as well as the strain-dependent magnetic transition behavior arise from the combined effects of both through-bond and p-p direct interactions. Our work offers a new avenue to facilitate the design of controllable and tunable spin devices.
Search for the radioactivity of 180mTa using an underground HPGe sandwich spectrometer.

M. Hult,J. Wieslander,G. Marissens,J. Gasparro,U. Wätjen,M. Misiaszek

DOI: https://doi.org/10.1016/j.apradiso.2009.01.057

IF: 1.787

2009-05-01

Applied Radiation and Isotopes

Abstract:
Reversible strain-induced magnetic phase transition in a van der Waals magnet

John Cenker,Shivesh Sivakumar,Kaichen Xie,Aaron Miller,Pearl Thijssen,Zhaoyu Liu,Avalon Dismukes,Jordan Fonseca,Eric Anderson,Xiaoyang Zhu,Xavier Roy,Di Xiao,Jiun-Haw Chu,Ting Cao,Xiaodong Xu

DOI: https://doi.org/10.1038/s41565-021-01052-6

IF: 38.3

2022-01-20

Nature Nanotechnology

Abstract:Mechanical deformation of a crystal can have a profound effect on its physical properties. Notably, even small modifications of bond geometry can completely change the size and sign of magnetic exchange interactions and thus the magnetic ground state. Here we report the strain tuning of the magnetic properties of the A-type layered antiferromagnetic semiconductor CrSBr achieved by designing a strain device that can apply continuous, in situ uniaxial tensile strain to two-dimensional materials, reaching several percent at cryogenic temperatures. Using this apparatus, we realize a reversible strain-induced antiferromagnetic-to-ferromagnetic phase transition at zero magnetic field and strain control of the out-of-plane spin-canting process. First-principles calculations reveal that the tuning of the in-plane lattice constant strongly modifies the interlayer magnetic exchange interaction, which changes sign at the critical strain. Our work creates new opportunities for harnessing the strain control of magnetism and other electronic states in low-dimensional materials and heterostructures.

materials science, multidisciplinary,nanoscience & nanotechnology
PT-symmetry-protected Dirac States in Strain-Induced Hidden MoS2 Monolayer

Meiling Xu,Guohui Zhan,Siyu Liu,Dongqin Zhang,Xin Zhong,Ziyang Qu,Yinwei Li,Aijun Du,Haijun Zhang,Yanchao Wang

DOI: https://doi.org/10.1103/physrevb.100.235435

IF: 3.7

2019-01-01

Physical Review B

Abstract:Two-dimensional (2D) materials have recently attracted significant interest in condensed-matter physics and materials science due to rich intriguing physics and potential applications. Here, by first-principles calculations, we discover a phase of transition-metal dichalcogenides (MoS2 and its family) named the 1H' phase. We demonstrate that 1H' MoS2 monolayer has multiple topological phase transitions from a topologically trivial insulator state to a 2D type-II Dirac semimetal state, and then to a 2D ideal type-I semimetal state under a moderate tensile strain. The Dirac points are protected by the coexistence of space-inversion (P) and time-reversal (7) symmetry. Our results highlight a family of nonhoneycomb 2D Dirac semimetals with potential application in nanoelectronics.
The Coupling of Local Strain and K + ‐Ion Release Induced Phase Transition Heterogeneity in Tunnel MnO 2

Haoyang Peng,Fanjie Xia,Chenyu Zhang,Haoxiang Zhuo,Xin Peng,Peihao Song,Congli Sun,Jinsong Wu

DOI: https://doi.org/10.1002/adfm.202113424

IF: 19

2022-03-28

Advanced Functional Materials

Abstract:The structure and valence transitions in multi‐valent transition metal oxides are closely associated with the intrinsic functionalities that exhibit wide applications in various fields, such as rechargeable batteries, supercapacitors, and catalysis. The internal strain due to intercalated and then released alkali‐ions and defects plays a critical role in tuning the energetically close correlated structures. However, such an effect is still elusive due to its fast dynamics at the atomic scale that requires both high temporal and spatial resolution. Herein, a chip‐based in situ scanning transmission electron microscope investigation is conducted, in which an abnormal tunnel to layered transition within a single MnO2 nanowire is observed. The internal strain initiates a Jahn–Teller active Mn3+ transition to facilitate the Mn migration, which significantly reduces the Mn migration barrier and kinetically favors this abnormal transition. This work provides an atomistic insight into a strain effect in tuning the multi‐phase and valence transitions in the functional metal oxides, e.g., the phase transition in MnO2 during K+‐ion extraction for K+‐ion batteries. An abnormal tunnel to layered transition due to their different energy response to strain is observed within a single MnO2 nanowire by in situ STEM. The strain initiates a Jahn–Teller active Mn3+ transition to facilitate the Mn migration, which significantly reduces the Mn migration barrier and kinetically favors the abnormal transition.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Magnetic Phase Transitions and Magnetoelastic Coupling in a Two-Dimensional Stripy Antiferromagnet

Pingfan Gu,Yujia Sun,Cong Wang,Yuxuan Peng,Yaozheng Zhu,Xing Cheng,Kai Yuan,Chao Lyu,Xuelu Liu,Qinghai Tan,Qinghua Zhang,Lin Gu,Zhi Wang,Hanwen Wang,Zheng Han,Kenji Watanabe,Takashi Taniguchi,Jinbo Yang,Jun Zhang,Wei Ji,Ping-Heng Tan,Yu Ye

DOI: https://doi.org/10.1021/acs.nanolett.1c04373

IF: 10.8

2022-01-18

Nano Letters

Abstract:Materials with a quasi-one-dimensional stripy magnetic order often exhibit low crystal and magnetic symmetries, thus allowing the presence of various energy coupling terms and giving rise to macroscopic interplay between spin, charge, and phonon. In this work, we performed optical, electrical and magnetic characterizations combined with first-principles calculations on a van der Waals antiferromagnetic insulator chromium oxychloride (CrOCl). We detected the subtle phase transition behaviors of exfoliated CrOCl under varying temperature and magnetic field and clarified its controversial spin structures. We found that the antiferromagnetism and its air stability persist down to few-layer samples, making it a promising candidate for future 2D spintronic devices. Additionally, we verified the magnetoelastic coupling effect in CrOCl, allowing for the potential manipulation of the magnetic states via electric field or strain. These virtues of CrOCl provide us with an ideal platform for fundamental research on spin-charge, spin-phonon coupling, and spin-interactions.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
A density functional theory study of the tunable structure, magnetism and metal-insulator phase transition in VS2 monolayers induced by in-plane biaxial strain

Min Kan,Bo Wang,Young Hee Lee,Qiang Sun

DOI: https://doi.org/10.1007/s12274-014-0626-5

IF: 9.9

2014-12-01

Nano Research

Abstract:We report a density functional theory study of a phase transition of a VS2 monolayer that can be tuned by the in-plane biaxial strain. This results in both a metal-insulator transition and a low spin-high spin magnetic transition. At low temperature, the semiconducting H-phase is stable and large strain (>3%) is required to provoke the transition. On the other hand, at room temperature (300 K), only a small tensile strain of 2% is needed to induce the phase transition from the semiconducting H-phase to the metallic T-phase together with the magnetic transition from high spin to low spin. The phase diagram dependence on both strain and temperature is also discussed in order to provide a better understanding of the phase stability of VS2 monolayers.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Strain‐Induced Magnetism in MSi2N4 (M = V, Cr): A First‐Principles Study

Yingmei Li,Jing Wang,Guochun Yang,Yong Liu

DOI: https://doi.org/10.1002/andp.202100273

2021-01-01

Annalen der Physik

Abstract:The discovery of ferromagnetic 2D van der Waals (vdW) materials has opened up opportunities for exploring and harnessing magnetism in low-dimensional limit, and developing innovative paper-like spintronic devices. Stress engineering demonstrates unique advantages in regulating material properties, especially for 2D materials. With the aid of first-principles calculations, the effectiveness of strain engineering for modulating the electronic and magnetic properties of MSi2N4 (M = V, Cr) monolayers from a new family of layer-structured 2D vdW materials is explored. Their magnetic configurations are effectively tuned via the uniaxial and biaxial tensile strain of in-plane lattice vectors. VSi2N4 exhibits half-metallic ferromagnetic character, whereas CrSi2N4 is prone to be antiferromagnetic (AFM), which is rationalized from the competition between the direct metal-metal AFM interaction and the 90(0) ferromagnetic superexchange. More intriguingly, VSi2N4 demonstrates a high magnetic ordering temperature of 285 K, which is close to room temperature. The predicted appealing properties of VSi2N4 under strain await experimental confirmation.

A method for quantitative determinations of nonhistone proteins in chromatin.

Strain Induced Structural Phase Transition in TM6X6 (TM = Mo, W; X = S, Se, Te) Nanowires

Magnetic Phase Transition in strained two-dimensional semiconductor MoTeI Monolayer

Mechanical Behaviors of MoS Nanowires under Tension from Molecular Dynamics Simulations

Strain-induced Semiconductor to Metal Transition in MA2Z4 Bilayers (M = Ti, Cr, Mo; A = Si; Z = N, P)

Structural phase transition and electronic properties of two-dimensional

Strain-induced topological phase transition in ferromagnetic Janus monolayer MnSbBiS 2 Te 2

Strain-dependent Magnon Transport in CoFe2O4/NiO/CoFe2O4 Junctions Induced by Bulk Acoustic Waves

MoS2 Heterostructure with Tunable Phase Stability: Strain Induced Interlayer Covalent Bond Formation

Strain Mediated Transition Between Skyrmion and Antiskyrmion in Ferromagnetic Thin Films

Manipulating the electronic structure and physical properties in monolayer Mo2I3Br3 via strain and doping

Strain-tunable magnetic and magnonic states in Ni-dihalide monolayers

Manipulating the Electronic Structure and Physical Properties in Monolayer Mo2I3Br3via Strain and Doping

Strain-induced Magnetic Transitions in Half-Fluorinated Single Layers of BN, GaN and Graphene.

Search for the radioactivity of 180mTa using an underground HPGe sandwich spectrometer.

Reversible strain-induced magnetic phase transition in a van der Waals magnet

PT-symmetry-protected Dirac States in Strain-Induced Hidden MoS2 Monolayer

The Coupling of Local Strain and K + ‐Ion Release Induced Phase Transition Heterogeneity in Tunnel MnO 2

Magnetic Phase Transitions and Magnetoelastic Coupling in a Two-Dimensional Stripy Antiferromagnet

A density functional theory study of the tunable structure, magnetism and metal-insulator phase transition in VS2 monolayers induced by in-plane biaxial strain

Strain‐Induced Magnetism in MSi2N4 (M = V, Cr): A First‐Principles Study