Abstract:Two-dimensional (2D) transition metal dichalcogenides (TMDCs) with layered structures provide a unique platform for exploring the effect of number of layers on their fundamental properties. However, the thickness scaling effect on the chemical properties of these materials remains unexplored. Here, we explored the chemically induced phase transition of 2D molybdenum disulfide (MoS2) from both experimental and theoretical aspects and observed that the critical electron injection concentration and the duration required for the phase transition of 2D MoS2 increased with decreasing number of layers. We further revealed that the observed dependence originated from the layer-dependent density of states of 2H-MoS2 , which results in decreasing phase stability for 2H-MoS2 with increasing number of layers upon electron doping. Also, the much larger energy barrier for the phase transition of monolayer MoS2 induces the longer reaction time required for monolayer MoS2 as compared to multilayer MoS2 . The layer-dependent phase transition of 2D MoS2 allows for the chemical construction of semiconducting-metallic heterophase junctions and, subsequently, the fabrications of rectifying diodes and all 2D field effect transistors and thus opens a new avenue for building ultrathin electronic devices. In addition, these new findings elucidate how electronic structures affect the chemical properties of 2D TMDCs and, therefore, shed new light on the controllable chemical modulations of these emerging materials.

PT-symmetry-protected Dirac States in Strain-Induced Hidden MoS2 Monolayer

Strain-induced Semiconductor to Metal Transition in MA2Z4 Bilayers (M = Ti, Cr, Mo; A = Si; Z = N, P)

Non-centrosymmetric Weyl Semimetal State and Strain Effect in the Twisted-Brick Phase Transition Metal Monochalcogenides.

Quantum Spin Hall Effect and Topological Phase Transition in Two-Dimensional Square Transition Metal Dichalcogenides

Strain-induced topological phase transition in ferromagnetic Janus monolayer MnSbBiS 2 Te 2

Unconventional Quantum Hall Effect and Tunable Spin Hall Effect in Dirac Materials: Application to an Isolated MoS2 Trilayer.

Strain induced magnetic hysteresis in MoS2 and WS2 monolayers with symmetric double sulfur vacancy defects

Magnetic Phase Transition in strained two-dimensional semiconductor MoTeI Monolayer

Strain-Induced Isostructural and Magnetic Phase Transitions in Monolayer MoN2

Topological Insulating States in 2D Transition Metal Dichalcogenides Induced by Defects and Strain.

Strain Robust Spin Gapless Semiconductors/half-Metals in Transition Metal Embedded MoSe2monolayer.

Uniaxial strain-induced phase transition in the 2D topological semimetal IrTe2

MoS2 Heterostructure with Tunable Phase Stability: Strain Induced Interlayer Covalent Bond Formation

Strain-induced topological phase transition in two-dimensional platinum ditelluride

Room-temperature quantum spin Hall phase in laser-patterned few-layer 1T'- MoS2

Type-Ii Dirac Fermions In The Ptse2 Class Of Transition Metal Dichalcogenides

Layer-dependent Chemically Induced Phase Transition of Two-dimensional MoS2.

Local Engineering of Topological Phase in Monolayer MoS 2

Two-Dimensional Ferroelastic Topological Insulators in Single-Layer Janus Transition Metal Dichalcogenides MSSe (M=Mo, W)

Two-dimensional Dirac Nodal Line State Protected Against Spin-Orbit Coupling in MoTe Monolayer

Observation of a uniaxial strain-induced phase transition in the 2D topological semimetal IrTe$_2$