Room-temperature quantum spin Hall phase in laser-patterned few-layer 1T'- MoS2

Naoki Katsuragawa,Mizuki Nishizawa,Taketomo Nakamura,Taiki Inoue,Sahar Pakdel,Shigeo Maruyama,Shingo Katsumoto,Juan Jose Palacios,Junji Haruyama

DOI: https://doi.org/10.1038/s43246-020-00050-w

2020-06-26

Abstract:The quantum-spin-Hall (QSH) phase of 2D topological insulators has attracted increased attention since the onset of 2D materials research. While large bulk gaps with vanishing edge gaps in atomically thin layers have been reported, verifications of the QSH phase by resistance measurements are comparatively few. This is partly due to the poor uniformity of the bulk gap induced by the substrate over a large sample area and/or defects induced by oxidation. Here, we report the observation of the QSH phase at room-temperature in the 1T'-phase of few-layer MoS2 patterned onto the 2H semiconducting phase using low-power and short-time laser beam irradiation. Two different resistance measurements reveal hallmark transport conductance values, ~e2/2h and e2/4h, as predicted by the theory. Magnetic-field dependence, scanning tunneling spectra, and calculations support the emergence of the room-temperature QSH phase. Although further experimental verification is still desirable, our results provide feasible application to room-temperature topological devices.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

### The problems the paper attempts to solve

This paper aims to solve the problem of achieving the Quantum Spin Hall (QSH) phase at room temperature. Specifically, the authors achieved this goal in few - layer 1T’ - MoS₂ through low - power and short - time laser beam irradiation and verified its Quantum Spin Hall effect.

#### Background problems
1. **Difficulties in experimental verification of the QSH phase**:
- Although theoretical predictions and some experiments have demonstrated the QSH phase in two - dimensional materials, it is still very challenging to observe this phenomenon at room temperature.
- The main reasons are the inhomogeneity of the bulk gap in large sample areas and defects caused by oxidation or substrates.

2. **Limitations of existing research**:
- Most of the current research on the QSH phase is carried out at low temperatures, for example, in HgTe/(Hg,Cd)Te quantum wells.
- For transition metal disulfides (such as WSe₂, Bi₂Te₃, etc.), although a large bulk gap has been observed at low temperatures, there are no reports of successful observation of the QSH phase at room temperature.

#### Solutions
To overcome these challenges, the authors proposed a new method, that is, using low - power and short - time laser beam irradiation to pattern few - layer 1T’ - MoS₂, thereby achieving the QSH phase at room temperature. The specific steps include:

1. **Sample preparation and characterization**:
- Using low - power (4.6 mW) and short - time (20 seconds) laser beam irradiation, convert multi - layer 2H - MoS₂ into few - layer 1T’ - MoS₂.
- The structural changes after laser irradiation were confirmed by atomic force microscopy (AFM), Raman spectroscopy and photoluminescence (PL) measurements.

2. **Resistance measurement**:
- Two - probe and four - probe resistance measurements were carried out under different back - gate voltages (Vbg), and resistance plateau values (~RQ/2 and RQ/4) consistent with theoretical predictions were observed, where \( R_Q=\frac{h}{e^2} \) is the quantum resistance.
- These results indicate the existence of topologically protected helical edge states, which are characteristics of the QSH phase.

3. **Magnetic field - dependent measurement**:
- The influence of a perpendicular magnetic field on conductivity was studied, and it was found that the conductivity decreased exponentially with the increase of the magnetic field, further supporting the existence of the QSH phase.

4. **Low - temperature scanning tunneling spectroscopy**:
- Scanning tunneling spectroscopy measurements were carried out at low temperatures, and a large bulk gap (about 60 - 70 meV) was found, and the band gap closed at the edge, which is consistent with the theoretical expectation of the QSH phase.

### Conclusion
Through this method, the authors observed the QSH phase in few - layer 1T’ - MoS₂ at room temperature for the first time. This achievement not only provides the feasibility for the application of room - temperature topological devices, but also opens up a new path for future research on topological insulators at high temperatures.

### Formula summary
- Quantum resistance: \( R_Q = \frac{h}{e^2} \)
- Resistance plateau values: \( R_{\text{plateau}}=\frac{h}{2e^2} \) and \( \frac{h}{4e^2} \)

I hope this summary can help you understand the core problems of this paper and their solutions. If you have more questions or need further explanations, please feel free to let me know!