Abstract:The evolution of the physical properties of two‐dimensional material from monolayer limit to the bulk reveals unique consequences from dimension confinement and provides a distinct tuning knob for applications. Monolayer 1T'‐phase transition metal dichalcogenides (1T'‐TMDs) with ubiquitous quantum spin Hall (QSH) states are ideal two‐dimensional building blocks of various three‐dimensional topological phases. However, the stacking geometry was previously limited to the bulk 1T'‐WTe2 type. Here, we introduce the novel 2M‐TMDs consisting of translationally stacked 1T'‐monolayers as promising material platforms with tunable inverted bandgaps and interlayer coupling. By performing advanced polarization‐dependent angle‐resolved photoemission spectroscopy as well as first‐principles calculations on the electronic structure of 2M‐TMDs, we revealed a topology hierarchy: 2M‐WSe2, MoS2, and MoSe2 are weak topological insulators (WTIs), whereas 2M‐WS2 is a strong topological insulator (STI). Further demonstration of topological phase transitions by tunning interlayer distance indicates that band inversion amplitude and interlayer coupling jointly determine different topological states in 2M‐TMDs. We propose that 2M‐TMDs are parent compounds of various exotic phases including topological superconductors and promise great application potentials in quantum electronics due to their flexibility in patterning with two‐dimensional materials. This article is protected by copyright. All rights reserved

Local engineering of topological phase in monolayer MoS2

Local Engineering of Topological Phase in Monolayer MoS 2

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Layer-dependent Chemically Induced Phase Transition of Two-dimensional MoS2.

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Identifying topological superconductivity in two-dimensional transition-metal dichalcogenides

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