Abstract:The discovery of graphene in 2004 by Konstantin Novoselov and Andre Geim opened a new scientific arena: “2D materials”. The finding of new layered and non-layered materials and their potential applications in various fields has been taken a great attention in recent years. A wide variety of 2D materials such as transition metal dichalcogenides (TMDs), transition metal trichalogenides (Bi2Se3, Bi2Te3, etc.), transition metal monochalcogenide (GaSe, GaS, etc.), transition metal thiophosphides (MnPS3, FePS3, etc.), silicene, phosphorene and hexagonal boron nitride have been found to possess many fascinating and unique properties that are promising for various potential applications such as in optoelectronics, sensors, spintronics, valleytronics, energy storage and catalysis. Among the 2D family, the TMDs grasp diverse properties, ranging from insulator, semimetal, metal, semiconductor and superconductor and make them most interesting 2D materials in both academic and industrial perspectives. The TMDs are usually abbreviated by the chemical formula of MX2, where M is a transition metal such as Cr, Mo, W, Re, Ta, Zr and Pd, and X is a chalcogen of S, Se and Te. The different filling states of the d orbitals in this wide range of transition metals gives rise to TMDs with versatile properties. Among TMDs, group 6 TMDs such as MoS2, WS2, MoSe2 and WSe2 are attracting great attention due to their semiconducting nature, layer-dependent bandgap and strong light–matter interaction. The finite and tunable bandgap of group 6 TMDs compensate the lack in microelectronic application of graphene which arises due to its gapless feature. Herein we address different phases of TMDs including hexagonal (H), trigonal (T) and rhombohedral (R). We reviewed the optical and electronic properties such as thickness-dependent band structure, spin–orbit coupling, excitonic properties, Berry-phase-related properties and valley Hall effect of semiconducting TMDs. The modulation of electronic properties by external stimuli such as electric field and strain is also discussed in this chapter. The metallic TMDs such as 1T phase of group 6 TMDs, Ti-, V-, Nb-based TMD and 2H phase of NbS2, NbSe2, TaS2 and TaSe2 are discussed. The magnetism, strain and doping-induced magnetism in both metallic and semiconducting TMDs are addressed in this chapter.

Topological phase transition in MoTe$_2$: A Review

Topological Phase Transition Between Distinct Weyl Semimetal States in MoTe2

Nontrivial superconductivity in topological MoTe2-x S x crystals.

N ov 2 01 9 Topological phase transition between distinct Weyl semimetal states in MoTe 2

MoTe2: Semiconductor or Semimetal?

Topological phase transition between distinctWeyl semimetal states in MoTe2

MoTe 2 : Semiconductor or Semimetal?

Superconducting properties of MoTe$_2$ from the $ab~initio$ anisotropic Migdal-Eliashberg theory

An Assessment of Thermally Driven Local Structural Phase Changes in 1$T$$'$- MoTe$_2$

Phase Transition and Electronic Structure Evolution of MoTe2 Induced by W Substitution

Discovery of smectic charge and pair-density-wave orders in topological monolayer 1T$^\prime$-MoTe$_2$

Evidence of surface $p$-wave superconductivity and higher-order topology in MoTe$_2$

Simulation of Transition Metal Dichalcogenides

Enhanced Superconductivity and Upper Critical Field in Ta‐Doped Weyl Semimetal Td‐MoTe2

Phase evolution and superconductivity enhancement in Se-substituted MoTe$_2$ thin films

Light induced sub-picosecond topological phase transition in MoTe2

Topology Hierarchy of Transition Metal Dichalcogenides Built from Quantum Spin Hall Layers

Thickness-dependence of hydrogen-induced phase transition in MoTe$_{2}$

Topological Weyl phase transition in Mo$_x$W$_{1-x}$Te$_2$

Multiple Topological Electronic Phases in Superconductor MoC

Composition and Temperature-Dependent Phase Transition in Miscible Mo1−xWxTe2 Single Crystals