Strain Induced Structural Phase Transition in TM6X6 (TM = Mo, W; X = S, Se, Te) Nanowires

Yi Peng,Xiaolin Wei,Chuanhong Jin,Yanning Zhang,Juexian Cao
DOI: https://doi.org/10.1016/j.jssc.2021.122194
IF: 3.3
2021-01-01
Journal of Solid State Chemistry
Abstract:The effect of axial strain on the structural phase transition and electronic properties of TM6X6 (TM = Mo, W; X = S, Se, Te) nanowires have been systematically investigated by first-principles calculations. It is interesting to see the structural phase transition from the stable alpha-TM6X6 into metastable beta-TM6X6 nanowires by external axial tensile strains, accompanied by the electronic feature transition from metal to semiconductor. Among them, other beta-TM6X6 nanowires exhibit direct bandgap semiconducting characteristics whereas the beta-TM6Te6 nanowires are indirect bandgap semiconductors. Our results have revealed the structural phase transition and metal-to-semiconductor transition induced by axial strain and suggested potential application of TM6X6 nanowires in future phase-controlled catalytic, electronic and optoelectronic devices.
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