Abstract:Electronic correlations could have significant impact on the material properties. They are typically pronounced for localized orbitals and enhanced in low-dimensional systems, so two-dimensional (2D) transition metal compounds could be a good platform to study their effects. Recently, a new class of 2D transition metal compounds, the MoSi2N4-family materials, has been discovered, and some of them exhibit intrinsic magnetism. Here, taking monolayer VSi2P4 as an example from the family, we investigate the impact of correlation effects on its physical properties, based on the first-principles calculations with the DFT+U approach. We find that different correlation strengths can drive the system into a variety of interesting ground states, with rich magnetic, topological, and valley features. With increasing correlation strength, while the system favors a ferromagnetic semiconductor state for most cases, the magnetic anisotropy and the band gap type undergo multiple transitions, and in the process, the band edges can form single, two, or three valleys for electrons or holes. Remarkably, there is a quantum anomalous Hall (QAH) insulator phase, which has a unit Chern number and has its chiral edge states polarized in one of the valleys. The boundary of the QAH phase corresponds to the half-valley semimetal state with fully valley polarized bulk carriers. We further show that for phases with the out-of-plane magnetic anisotropy, the interplay between spin-orbit coupling and orbital character of valleys enables an intrinsic valley polarization for electrons but not for holes. This electron valley polarization can be switched by reversing the magnetization direction, providing a new route of magnetic control of valleytronics. Our result sheds light on the possible role of correlation effects in the 2D transition metal compounds, and it will open new perspectives for spintronic, valleytronic, and topological nanoelectronic applications based on these materials.

Structural and Electronic Phase Transitions in Ferromagnetic Monolayer Vs2 Induced by Charge Doping

Structural Phase Transition of Multilayer VSe2.

Ferromagnetic vanadium disulfide VS 2 monolayers with high Curie temperature and high spin polarization

Rich many-body phase diagram of electrons and holes in doped monolayer transition metal dichalcogenides

Modulation of Metal and Insulator States in 2D Ferromagnetic VS 2 by van der Waals Interaction Engineering.

Charge doping and electric field tunable ferromagnetism and Curie temperature in MnS2 monolayer

Magnetism and Electronic Phase Transitions in Monoclinic Transition Metal Dichalcogenides with Transition Metal Atoms Embedded

Structural dimerization and charge-orbital ordering in a ferromagnetic semiconductor LiV2S4 monolayer

A density functional theory study of the tunable structure, magnetism and metal-insulator phase transition in VS2 monolayers induced by in-plane biaxial strain

Effect of Fe-doping on VS2 monolayer: A first-principles study

Modulating Peierls distortion of 1T_prime MoS2 via charge doping: a new charge density wave phase, reversible phase transition, and excellent electromechanical properties

Direct Observation of Semiconductor-Metal Phase Transition in Bilayer Tungsten Diselenide Induced by Potassium Surface Functionalization.

Mechanism of carrier doping induced magnetic phase transitions in two-dimensional materials

Anomalous metallic phase in molybdenum disulphide induced via gate-driven organic ion intercalation

Electron-phonon interaction, magnetic phase transition, charge density waves and resistive switching in VS2 and VSe2 revealed by Yanson point contact spectroscopy

Doped Mott phase and charge correlations in monolayer 1T-NbSe$_2$

Bandgap and doping effects in MoS2 measured by Scanning Tunneling Microscopy and Spectroscopy

Intrinsic and Doping-Enhanced Superconductivity in Monolayer 1h−tas2 : Critical Role of Charge Ordering and Spin-Orbit Coupling

Metallic Transport in Monolayer and Multilayer Molybdenum Disulfides by Molecular Surface Charge Transfer Doping

Correlation-driven topological and valley states in monolayer VSi 2 P 4