Anomalous metallic phase in molybdenum disulphide induced via gate-driven organic ion intercalation

Erik Piatti,Jessica Montagna Bozzone,Dario Daghero

DOI: https://doi.org/10.3390/nano12111842

2022-06-27

Abstract:Transition metal dichalcogenides exhibit rich phase diagrams dominated by the interplay of superconductivity and charge density waves, which often result in anomalies in the electric transport properties. Here, we employ the ionic gating technique to realize a tunable, non-volatile organic ion intercalation in bulk single crystals of molybdenum disulphide (MoS$_{2}$). We demonstrate that this gate-driven organic ion intercalation induces a strong electron doping in the system without changing the pristine $2H$ crystal symmetry and triggers the emergence of a re-entrant insulator-to-metal transition. We show that the gate-induced metallic state exhibits clear anomalies in the temperature dependence of the resistivity with a natural explanation as signatures of the development of a charge-density wave phase which was previously observed in alkali-intercalated MoS$_{2}$. The relatively large temperature at which the anomalies are observed ($\sim$$150$ K), combined with the absence of any sign of doping-induced superconductivity down to $\sim$$3$ K, suggests that the two phases might be competing with each other to determine the electronic ground state of electron-doped MoS$_2$.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to induce an abnormal metal phase in molybdenum disulfide (MoS2) through gated - driven organic ion intercalation technology and study the impact of this process on the electrical transport properties of the material. Specifically, the authors utilized ion - gating technology to achieve large - scale, non - volatile organic ion intercalation in single - crystal MoS2. This intercalation led to strong electron doping without changing the original 2H crystal symmetry and triggered a re - entering insulator - to - metal transition. In addition, they also observed that at a temperature of approximately 150 K, the resistivity exhibited a distinct anomaly as a function of temperature, which may be related to the development of the charge - density - wave (CDW) phase. However, even at the lowest temperature (about 3 K), no doping - induced superconductivity was observed, indicating that there may be a competitive relationship between the superconducting phase and the CDW phase, which jointly determine the electronic ground state of electron - doped MoS2.

In short, this study aims to explore how to achieve controllable electron doping in MoS2 through organic ion intercalation technology and how this doping affects the electrical properties of the material, especially inducing an abnormal metal phase and the physical mechanisms behind it.