Abstract:Phase engineering of two-dimensional (2D) transition metal dichalcogenides (TMDs) such as MoTe2 offers tremendous opportunities in various device applications. However, most of the existing methods so far only address the small-area local phase change or the growth of certain kinds of phases of MoTe2 film by laser irradiation, mechanical strain, or procursor type. Obtaining facile, tunable, reversible, and continuous-phase transition and evolution between different phases in direct growth of large-area, few-layer MoTe2 still remains challenging. Here, we develop a facile method to achieve phase control and transition and report a highly tunable, tellurization velocity-dependent metallic-semiconducting-metallic phase evolution in chemical vapor deposition (CVD) growth of large-area, few-layer MoTe2. We found four different phase stages, including two different types of coexistence phases of both 2H and 1 T' phases, 100% 2H phase, and 100% 1T' phase, would emerge, relying on the adopted tellurization velocity. Importantly, the tellurization velocity should be extremely controlled to obtain 100% 2H phase MoTe2, while 100% 1T' phase requires a fast tellurization velocity. We further found that such metallic-semiconducting-metallic phase evolution took place with a homogeneous spatial distribution and differs from previous reports in which obvious phase separations are usually found during the phase transition. The resulting MoTe2 shows high quality with room-temperature mobility comparable with mechanically exfoliated materials. The results might impact large-scale phase engineering of TMDs and other 2D materials for Weyl semimetal topological physics and potential 2D semiconductor device applications.

Reversible Electrochemical Phase Change in Monolayer to Bulk MoTe2 by Ionic Liquid Gating

Electric field induced semiconductor-to-metal phase transition in vertical MoTe2 and Mo1-xWxTe2 devices

Engineering the Structural and Electronic Phases of MoTe2 Through W Substitution

Ultrafast and Stable Phase Transition Realized in MoTe2-based Memristive Devices.

Reversible H-T′ Phase Transition in Monolayer Molybdenum Disulfide Via Electron Beam Assisted Solid State Lithiation/delithiation

Enhanced 1t '-Phase Stabilization And Chemical Reactivity In A Mote2 Monolayer Through Contact With A 2d Ca2n Electride

In situ Imaging of an Anisotropic Layer-by-Layer Phase Transition in Few-Layer MoTe2

Tellurization Velocity-Dependent Metallic-Semiconducting-Metallic Phase Evolution in Chemical Vapor Deposition Growth of Large-Area, Few-Layer MoTe2.

Heterocontact-Triggered 1H to 1T' Phase Transition in CVD-Grown Monolayer MoTe2: Implications for Low Contact Resistance Electronic Devices

Ultrafast reversible phase engineering in MoTe2 thin film via polaron formation

Soft Hydrogen Plasma Induced Phase Transition in Monolayer and Few-Layer MoTe2

Topological Phase Transition Between Distinct Weyl Semimetal States in MoTe2

Joule heating induced non-melting phase transition and multi-level conductance in MoTe2 based phase change memory

Charge Mediated Reversible Metal-Insulator Transition in Monolayer Mote2 and Wxmo1-Xte2 Alloy

Controllable 2H-to-1t' Phase Transition in Few-Layer MoTe2.

Structural phase transition in monolayer MoTe2 driven by electrostatic doping

Phase transformations in single-layer MoTe2stimulated by electron irradiation and annealing

Millimeter-Scale Single-Crystalline Semiconducting MoTe2 Via Solid-to-Solid Phase Transformation.

Phase Transition and Electronic Structure Evolution of MoTe2 Induced by W Substitution

Thickness-dependence of hydrogen-induced phase transition in MoTe$_{2}$

Semiconductor-semimetal Transition of MoTe2 Monolayer Modulated by Charge-Injection and Strain Engineering