Abstract:Transition metal dichalcogenides (TMDs) exist in various crystal structures with semiconducting, semi-metallic, and metallic properties. The dynamic control of these phases is of immediate interest for next generation electronics such as phase change memories. Of the binary Mo and W-based TMDs, MoTe2 is attractive for electronic applications because it has the lowest energy difference (40 meV) between the semiconducting (2H) and semi-metallic (1T') phases, allowing for MoTe2 phase change by electrostatic doping. Here we report phase change between the 2H and 1T' polymorphs of MoTe2 in thicknesses ranging from the monolayer case to effective bulk (73nm) using an ionic liquid electrolyte at room temperature and in air. We find consistent evidence of a partially reversible 2H-1T' transition using in-situ Raman spectroscopy where the phase change occurs in the top-most layers of the MoTe2 flake. We find a thickness-dependent transition voltage where higher voltages are necessary to drive the phase change for thicker flakes. We also show evidence of electrochemical activity during the gating process by observation of Te metal deposition. This finding suggests the formation of Te vacancies which have been reported to lower the energy difference between the 2H and 1T' phase, potentially aiding the phase change process. Our discovery that the phase change can be achieved on the surface layer of bulk materials reveals that this electrochemical mechanism does not require isolation of a single layer and the effect may be more broadly applicable than previously thought.

Structural phase transition in monolayer MoTe2 driven by electrostatic doping

Topological Phase Transition Between Distinct Weyl Semimetal States in MoTe2

Structural Phase Transition of Multilayer VSe2.

N ov 2 01 9 Topological phase transition between distinct Weyl semimetal states in MoTe 2

Electric field induced semiconductor-to-metal phase transition in vertical MoTe2 and Mo1-xWxTe2 devices

Reversible Electrochemical Phase Change in Monolayer to Bulk MoTe2 by Ionic Liquid Gating

Soft Hydrogen Plasma Induced Phase Transition in Monolayer and Few-Layer MoTe2

Reversible H-T′ Phase Transition in Monolayer Molybdenum Disulfide Via Electron Beam Assisted Solid State Lithiation/delithiation

Controllable 2H-to-1t' Phase Transition in Few-Layer MoTe2.

Doping-Induced Electronic and Structural Phase Transition in the Bulk Weyl Semimetal Mo1-xWxTe2

Phase Transition and Electronic Structure Evolution of MoTe2 Induced by W Substitution

Topological phase transition between distinctWeyl semimetal states in MoTe2

Structural and electronic phase transitions driven by electric field in metastable MoS$_2$ thin flake

Structural and Electronic Phase Transitions Driven by Electric Field in Metastable MoS2 Thin Flakes

Magnetic Phase Transition in strained two-dimensional semiconductor MoTeI Monolayer

In situ Imaging of an Anisotropic Layer-by-Layer Phase Transition in Few-Layer MoTe2

Composition and Temperature-Dependent Phase Transition in Miscible Mo1−xWxTe2 Single Crystals

Charge Mediated Reversible Metal-Insulator Transition in Monolayer Mote2 and Wxmo1-Xte2 Alloy

Heterocontact-Triggered 1H to 1T' Phase Transition in CVD-Grown Monolayer MoTe2: Implications for Low Contact Resistance Electronic Devices

In Situ STEM Observation of Phase Transition Triggered by Mo Migration in MoTe2.

Modulating Peierls distortion of 1T_prime MoS2 via charge doping: a new charge density wave phase, reversible phase transition, and excellent electromechanical properties